The SiC Ceramic Tray is a high-performance silicon carbide carrier designed for advanced wafer processing and semiconductor manufacturing environments. Engineered with high-purity silicon carbide (SiC) ceramic material, these trays provide exceptional thermal stability, high mechanical strength, and excellent chemical resistance for demanding high-temperature applications.

SiC ceramic trays are widely used in semiconductor fabrication processes such as:

• LPCVD / CVD processing
• Wafer annealing
• Diffusion
• Oxidation
• Epitaxy (EPI)
• High-temperature sintering
• Semiconductor thermal processing

Available for:

• 2 inch wafer processing
• 4 inch wafer processing
• 6 inch wafer processing
• 8 inch wafer processing
• Customized wafer sizes and structures

These trays ensure excellent wafer support, temperature uniformity, and contamination control throughout the manufacturing process.

Product Features

Excellent High-Temperature Resistance

Silicon carbide ceramic trays maintain outstanding stability under extreme temperatures, making them ideal for semiconductor furnace applications and thermal processing systems.

Advantages:

• Excellent thermal shock resistance
• Stable performance during rapid heating and cooling
• Long service life under continuous high-temperature operation

High Mechanical Strength

Compared with conventional ceramic materials, SiC trays offer superior hardness and flexural strength, reducing the risk of deformation or cracking during processing.

Benefits:

• High load-bearing capability
• Excellent dimensional stability
• Suitable for automated wafer handling systems
• Reduced maintenance frequency

Outstanding Chemical Resistance

SiC ceramic trays are highly resistant to corrosive chemicals and reactive process gases commonly used in semiconductor manufacturing.

Resistant to:

• Acids
• Alkalis
• Corrosive gases
• Chemical vapors

This ensures long-term reliability in harsh process environments.

Excellent Thermal Conductivity

The high thermal conductivity of silicon carbide enables fast and uniform heat transfer across the tray surface.

Processing Benefits:

• Improved wafer temperature uniformity
• Reduced thermal gradients
• Enhanced process consistency
• Lower wafer defect rates

Low Thermal Expansion

The low thermal expansion coefficient helps maintain structural accuracy during repeated thermal cycles.

Result:

• Reduced warping
• Better wafer alignment
• Improved production stability

Semiconductor-Grade Purity

Manufactured using 99.9% high-purity silicon carbide material, the trays help minimize particle contamination and support cleanroom semiconductor production standards.

Technical Specifications

Property	Value
Material	Silicon Carbide (SiC)
Purity	99.9%
Color	Black
Density	3.14 g/cm³
Flexural Strength	410 MPa
Young’s Modulus	430 GPa
Poisson’s Ratio	0.17
Fracture Toughness	2–3 MPa·m1/2
Thermal Expansion Coefficient	4.1 × 10⁻⁶/K
Thermal Conductivity	170 W/m·K

SiC Manufacturing Technology Comparison

Manufacturing Method	Features	Typical Applications
Pressureless Sintered SiC	High purity and thermal stability	Semiconductor wafer trays
Hot Pressed SiC	Higher mechanical strength	Structural ceramic parts
CVD SiC	Ultra-high purity surface	Advanced semiconductor equipment
Si-SiC	Cost-effective solution	Industrial furnace components

Applications of SiC Ceramic Trays

Semiconductor Wafer Processing

Widely used as wafer carriers and support trays in:

• LPCVD systems
• CVD systems
• Diffusion furnaces
• Oxidation furnaces
• Annealing equipment
• Semiconductor thermal reactors

Compatible with:

• Silicon wafers
• Sapphire wafers
• SiC wafers
• GaN wafers
• Compound semiconductor substrates

High-Temperature Sintering

Ideal for advanced ceramic and powder sintering applications requiring:

• Thermal stability
• Oxidation resistance
• Long operational life

Chemical Processing Equipment

Suitable for aggressive chemical environments due to excellent corrosion resistance.

Applications include:

• Chemical reactors
• Semiconductor wet processing
• Corrosive gas environments

Optical & Precision Manufacturing

Provides stable support for:

• Optical substrates
• Sapphire optical components
• Precision ceramic parts

Aerospace & Industrial Thermal Systems

Used in industries requiring:

• Lightweight high-strength materials
• Thermal management
• Corrosion-resistant components

Customization Services

We provide custom SiC ceramic tray solutions according to customer requirements.

Available Custom Options

• Custom dimensions
• Multi-wafer tray designs
• Slot and groove machining
• Precision hole drilling
• Surface polishing
• Special coatings
• Customized thermal processing compatibility

Advantages of SiC Ceramic Trays

Compared with quartz, alumina, and graphite trays, silicon carbide ceramic trays provide:

Performance	SiC Ceramic Tray
Thermal Conductivity	Excellent
Thermal Shock Resistance	Excellent
Mechanical Strength	Excellent
Corrosion Resistance	Excellent
Dimensional Stability	Excellent
Service Life	Long

FAQ

Can the SiC ceramic tray be customized?

Yes. We support custom sizes, structures, grooves, and processing designs according to customer wafer specifications and equipment requirements.

What wafer sizes are supported?

The trays can be designed for:

• 2 inch wafers
• 4 inch wafers
• 6 inch wafers
• 8 inch wafers
• Larger custom wafer formats

Is the SiC tray suitable for semiconductor furnace applications?

Yes. SiC ceramic trays are specifically designed for high-temperature semiconductor processing environments and provide excellent thermal stability and durability.