The Silicon Carbide (SiC) Stepped Ceramic Plate is a high-performance structural ceramic component engineered for semiconductor processing equipment and high-temperature industrial systems. Featuring a precision-machined stepped profile, the component enables accurate positioning, secure assembly, and excellent dimensional stability in demanding process environments.
Manufactured from high-purity silicon carbide ceramic, this component offers exceptional resistance to plasma exposure, thermal shock, chemical corrosion, and extreme temperatures. Its high stiffness and thermal conductivity make it ideal for structural and protective applications inside semiconductor equipment.
Designed for long-term reliability, SiC stepped ceramic plates are widely used in process chambers, vacuum systems, thermal equipment, and plasma-related semiconductor applications.
主な特徴
High Purity Silicon Carbide Material
Manufactured from ≥99% SiC ceramic with excellent thermal and mechanical performance.
Precision Stepped Structure
Stepped edge geometry provides accurate positioning and stable mechanical assembly.
Outstanding Thermal Stability
Capable of operating continuously at temperatures above 1600°C in inert environments with minimal deformation.
Excellent Plasma Resistance
Resistant to plasma erosion and corrosive process gases used in semiconductor manufacturing.
High Thermal Conductivity
Thermal conductivity of 120–200 W/m·K enables efficient heat transfer and temperature uniformity.
高い機械的強度
Excellent rigidity and wear resistance for long-term operation under demanding conditions.
Vacuum Compatible
Low outgassing characteristics make it suitable for clean and vacuum processing environments.
Fully Customizable
Dimensions, step structure, tolerances, and edge geometry can be customized according to drawings.
代表的なアプリケーション
- Semiconductor process chambers
- CVD / PECVD / LPCVD systems
- Plasma etching equipment
- Chamber covers and liner caps
- High-temperature support structures
- Vacuum processing systems
- Plasma-facing ceramic components
- Optoelectronic manufacturing equipment
技術仕様
| 項目 | 仕様 |
|---|---|
| 素材 | 炭化ケイ素（SiC） |
| 純度 | ≥99% |
| 密度 | 3.10–3.20 g/cm³ |
| 硬度 | ≥2500 HV |
| 曲げ強度 | ≥350MPa以上 |
| 弾性係数 | ~410 GPa |
| 熱伝導率 | 120–200 W/m·K |
| 熱膨張係数 | ~4.0 ×10⁻⁶ /K |
| Max Temperature (Inert Atmosphere) | >1600°C |
| Max Temperature (Air) | ~1400°C |
| 表面仕上げ | Ground / Optional polishing |
| Environment Compatibility | Vacuum, plasma, corrosive gas |
製造能力
We support advanced ceramic processing technologies including:
- Precision CNC machining
- Surface grinding
- Fine lapping and polishing
- Custom step machining
- Edge chamfer processing
- Tight tolerance manufacturing
- Prototype and volume production
カスタマイズ・オプション
Available customization includes:
- Outer diameter and thickness
- Step height and width
- Flatness requirements
- Surface roughness control
- Edge structure and chamfers
- Fine polishing options
- Drawing-based OEM production
Advantages of SiC Ceramic Components
Compared with conventional materials, SiC ceramic offers:
- Higher thermal conductivity
- Better thermal shock resistance
- Superior plasma durability
- 低熱膨張
- 強い化学的安定性
- Longer service life in semiconductor equipment
よくあるご質問
Q1: What is the primary purpose of the stepped structure?
The stepped geometry enables precise positioning and reliable assembly inside process equipment.
Q2: Can this component withstand plasma environments?
Yes. Silicon carbide has excellent resistance to plasma erosion and corrosive process gases.
Q3: Is the component vacuum compatible?
Yes. The material exhibits low outgassing and stable performance under vacuum conditions.
Q4: Can dimensions be customized?
Yes. Size, step profile, tolerances, and edge features can all be produced according to customer requirements.
Q5: Are polished versions available?
Optional fine grinding and polishing can be provided depending on application requirements.
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