Custom Silicon Carbide Stepped Ceramic Plate for Semiconductor High Temperature Equipment

The Silicon Carbide (SiC) Stepped Ceramic Plate is a high-performance structural ceramic component engineered for semiconductor processing equipment and high-temperature industrial systems. Featuring a precision-machined stepped profile, the component enables accurate positioning, secure assembly, and excellent dimensional stability in demanding process environments.

 The Silicon Carbide (SiC) Stepped Ceramic Plate is a high-performance structural ceramic component engineered for semiconductor processing equipment and high-temperature industrial systems. Featuring a precision-machined stepped profile, the component enables accurate positioning, secure assembly, and excellent dimensional stability in demanding process environments.

Manufactured from high-purity silicon carbide ceramic, this component offers exceptional resistance to plasma exposure, thermal shock, chemical corrosion, and extreme temperatures. Its high stiffness and thermal conductivity make it ideal for structural and protective applications inside semiconductor equipment.

Designed for long-term reliability, SiC stepped ceramic plates are widely used in process chambers, vacuum systems, thermal equipment, and plasma-related semiconductor applications.


Características principales

High Purity Silicon Carbide Material

Manufactured from ≥99% SiC ceramic with excellent thermal and mechanical performance.

Precision Stepped Structure

Stepped edge geometry provides accurate positioning and stable mechanical assembly.

Outstanding Thermal Stability

Capable of operating continuously at temperatures above 1600°C in inert environments with minimal deformation.

Excellent Plasma Resistance

Resistant to plasma erosion and corrosive process gases used in semiconductor manufacturing.

High Thermal Conductivity

Thermal conductivity of 120–200 W/m·K enables efficient heat transfer and temperature uniformity.

Alta resistencia mecánica

Excellent rigidity and wear resistance for long-term operation under demanding conditions.

Vacuum Compatible

Low outgassing characteristics make it suitable for clean and vacuum processing environments.

Fully Customizable

Dimensions, step structure, tolerances, and edge geometry can be customized according to drawings.


Aplicaciones típicas

  • Semiconductor process chambers
  • CVD / PECVD / LPCVD systems
  • Plasma etching equipment
  • Chamber covers and liner caps
  • High-temperature support structures
  • Vacuum processing systems
  • Plasma-facing ceramic components
  • Optoelectronic manufacturing equipment

Especificaciones técnicas

Artículo Especificación
Material Carburo de silicio (SiC)
Pureza ≥99%
Densidad 3.10–3.20 g/cm³
Dureza ≥2500 HV
Resistencia a la flexión ≥350 MPa
Módulo elástico ~410 GPa
Conductividad térmica 120–200 W/m·K
Coeficiente de dilatación térmica ~4.0 ×10⁻⁶ /K
Max Temperature (Inert Atmosphere) >1600°C
Max Temperature (Air) ~1400°C
Acabado superficial Ground / Optional polishing
Environment Compatibility Vacuum, plasma, corrosive gas

Capacidad de fabricación

We support advanced ceramic processing technologies including:

  • Precision CNC machining
  • Surface grinding
  • Fine lapping and polishing
  • Custom step machining
  • Edge chamfer processing
  • Tight tolerance manufacturing
  • Prototype and volume production

Opciones de personalización

Available customization includes:

  • Outer diameter and thickness
  • Step height and width
  • Flatness requirements
  • Surface roughness control
  • Edge structure and chamfers
  • Fine polishing options
  • Drawing-based OEM production

Advantages of SiC Ceramic Components

Compared with conventional materials, SiC ceramic offers:

  • Higher thermal conductivity
  • Better thermal shock resistance
  • Superior plasma durability
  • Menor dilatación térmica
  • Gran estabilidad química
  • Longer service life in semiconductor equipment

PREGUNTAS FRECUENTES

Q1: What is the primary purpose of the stepped structure?
The stepped geometry enables precise positioning and reliable assembly inside process equipment.

Q2: Can this component withstand plasma environments?
Yes. Silicon carbide has excellent resistance to plasma erosion and corrosive process gases.

Q3: Is the component vacuum compatible?
Yes. The material exhibits low outgassing and stable performance under vacuum conditions.

Q4: Can dimensions be customized?
Yes. Size, step profile, tolerances, and edge features can all be produced according to customer requirements.

Q5: Are polished versions available?
Optional fine grinding and polishing can be provided depending on application requirements.

Valoraciones

No hay valoraciones aún.

Sé el primero en valorar “Custom Silicon Carbide Stepped Ceramic Plate for Semiconductor High Temperature Equipment”

Tu dirección de correo electrónico no será publicada. Los campos obligatorios están marcados con *