The Customized Silicon Carbide (SiC) Ceramic Boat Carrier is a precision-engineered wafer support and transportation solution developed for high-temperature semiconductor manufacturing environments. Manufactured from high-purity SiC ceramic material, this carrier provides excellent thermal stability, superior corrosion resistance, high mechanical strength, and ultra-low contamination performance.
Designed for critical wafer handling processes, SiC ceramic boats are widely used in diffusion furnaces, oxidation systems, CVD reactors, RTP processes, epitaxial growth equipment, and advanced semiconductor production lines.
Compared with conventional quartz or graphite wafer boats, SiC ceramic carriers provide significantly longer service life, lower particle generation, and better process stability, making them ideal for semiconductor fabs, photovoltaic manufacturing, LED production, and power electronics industries.
Its high thermal conductivity and low thermal expansion coefficient enable uniform heat distribution and minimize wafer stress under extreme processing conditions.
Key Features of SiC Ceramic Boat Carrier
Exceptional High Temperature Resistance
The SiC ceramic structure maintains excellent mechanical stability under extremely high temperatures:
- Up to 1600°C in oxidizing atmosphere
- Up to 1950°C in inert atmosphere
The material resists deformation, sagging, and thermal fatigue during repeated heating cycles.
Excellent Chemical Resistance
High-purity silicon carbide exhibits outstanding resistance to:
- Кислоты
- Щелочи
- Плазменные среды
- Коррозионные технологические газы
Compatible with aggressive semiconductor process media including:
- SiH₄
- NH₃
- HCl
- POCl₃
- H₂Se
This ensures extended operational life in harsh processing environments.
Ultra-Low Particle Generation
Surface polishing and precision manufacturing minimize particle contamination during wafer processing.
Подходит для:
- Advanced semiconductor nodes
- Epitaxial deposition
- EUV processes
- Cleanroom manufacturing
Low particle generation helps improve wafer yield and reduce defect rates.
Высокая теплопроводность
Thermal conductivity:
160 Вт/м-К
Преимущества включают:
- Uniform wafer heating
- Improved temperature consistency
- Уменьшение тепловых градиентов
- Better process repeatability
Высокая механическая прочность
SiC ceramic provides:
- Excellent hardness
- High compressive strength
- Превосходная износостойкость
- Устойчивость к тепловому удару
Maintains dimensional stability even under long-term industrial operation.
Fully Customized Design
Customized solutions available according to customer requirements:
Wafer diameter
Slot quantity
Slot spacing
Boat dimensions
Отделка поверхности
Structure optimization
Supported wafer sizes include:
- 150 mm (6″)
- 200 mm (8″)
- 300 mm (12″)
- Customized sizes available
Технические характеристики
| Недвижимость | Единица | Значение |
|---|---|---|
| Silicon Carbide Content | % | >99.5 |
| Average Grain Size | μm | 4–10 |
| Bulk Density | kg/dm³ | >3.14 |
| Apparent Porosity | Vol % | <0.5 |
| Vickers Hardness | Kg/mm² | 2800 |
| Прочность на изгиб | МПа | 450 |
| Compression Strength | МПа | 3900 |
| Модуль упругости | ГПа | 420 |
| Вязкость разрушения | MPa·m1/2 | 3.5 |
| Теплопроводность | Вт/м-К | 160 |
| Электрическое сопротивление | Ohm·cm | 10⁶–10⁸ |
| Коэффициент теплового расширения | 10⁻⁶/K | 4.3 |
| Maximum Temperature (Oxidizing) | °C | 1600 |
| Maximum Temperature (Inert) | °C | 1950 |
Applications of SiC Ceramic Boat Carrier
Производство полупроводников
Widely used in semiconductor wafer fabrication processes including:
Diffusion Furnaces
Provides stable wafer support during high-temperature processing while minimizing thermal distortion.
Oxidation Systems
Maintains excellent dimensional accuracy and contamination control.
Rapid Thermal Processing
Low thermal expansion minimizes wafer warpage.
Ion Implantation
Excellent resistance to radiation and high-energy particle exposure.
CVD and Epitaxial Growth
Подходит для:
- SiC epitaxy
- GaN growth
- Silicon deposition
- Compound semiconductor processing
Excellent gas corrosion resistance extends service life.
SiC and Power Device Manufacturing
Используется для:
- SiC power devices
- GaN-on-SiC
- MOSFET production
- Advanced power modules
The thermal expansion coefficient closely matches SiC wafers, reducing thermal stress during high-temperature growth.
Фотоэлектрическая промышленность
Подходит для:
PERC Solar Cells
Resistant to phosphorus diffusion environments.
TOPCon Production
Stable performance under repeated thermal cycles.
Thin Film Solar Manufacturing
Excellent corrosion resistance in complex process atmospheres.
Compared with quartz wafer boats, SiC boats provide:
- Более длительный срок службы
- Lower maintenance costs
- Better process stability
LED and Optoelectronics
Используется в:
- Mini LED
- Micro LED
- Compound semiconductor production
Precision slot design reduces wafer edge damage and improves handling safety.
SiC Ceramic Boat vs Quartz Boat
| Comparison Item | SiC Ceramic Boat | Quartz Boat |
|---|---|---|
| Максимальная температура | 1950°C | Approximately 1250°C |
| Срок службы | 5–10 Years | 1–2 Years |
| Теплопроводность | Превосходно | Низкий |
| Генерация частиц | Очень низкий | Умеренный |
| Химическая стойкость | Превосходно | Средний |
| Механическая прочность | Высокий | Низкий |
SiC ceramic boats provide superior durability and lower operating costs for long-term semiconductor production.
Why Choose Our SiC Ceramic Boat Carrier
- High purity SiC material >99.5%
- Возможность прецизионной обработки
- Low contamination manufacturing process
- Custom design support
- Strict quality control
- Stable long-term production capability
- Fast response for customized projects
Our engineering team works closely with customers to develop customized wafer handling solutions for demanding industrial applications.
ЧАСТО ЗАДАВАЕМЫЕ ВОПРОСЫ
Q1: What wafer sizes can be supported?
Standard wafer sizes include:
- 150mm (6″)
- 200mm (8″)
- 300mm (12″)
Custom dimensions are available according to customer requirements.
Q2: Can slot quantity and spacing be customized?
Yes. We can customize:
- Slot number
- Slot pitch
- Structure design
- Surface treatment
- Overall dimensions
Q3: What is the lead time?
Standard products:
4–6 weeks
Customized designs:
8–12 weeks
Lead time may vary depending on complexity.
Q4: Why choose SiC instead of quartz or graphite boats?
По сравнению с обычными материалами, керамика SiC предлагает:
- Higher operating temperature
- Better contamination control
- Более длительный срок службы
- Improved corrosion resistance
- Superior mechanical strength
Q5: Can you manufacture according to drawings?
Yes. We support custom manufacturing based on customer drawings, samples, or detailed specifications.
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