Suporte de cerâmica SiC personalizado para manuseio de wafer semicondutor

The Customized Silicon Carbide (SiC) Ceramic Boat Carrier is a precision-engineered wafer support and transportation solution developed for high-temperature semiconductor manufacturing environments. Manufactured from high-purity SiC ceramic material, this carrier provides excellent thermal stability, superior corrosion resistance, high mechanical strength, and ultra-low contamination performance.

The Customized Silicon Carbide (SiC) Ceramic Boat Carrier is a precision-engineered wafer support and transportation solution developed for high-temperature semiconductor manufacturing environments. Manufactured from high-purity SiC ceramic material, this carrier provides excellent thermal stability, superior corrosion resistance, high mechanical strength, and ultra-low contamination performance.

Designed for critical wafer handling processes, SiC ceramic boats are widely used in diffusion furnaces, oxidation systems, CVD reactors, RTP processes, epitaxial growth equipment, and advanced semiconductor production lines.

Compared with conventional quartz or graphite wafer boats, SiC ceramic carriers provide significantly longer service life, lower particle generation, and better process stability, making them ideal for semiconductor fabs, photovoltaic manufacturing, LED production, and power electronics industries.

Its high thermal conductivity and low thermal expansion coefficient enable uniform heat distribution and minimize wafer stress under extreme processing conditions.


Key Features of SiC Ceramic Boat Carrier

Exceptional High Temperature Resistance

The SiC ceramic structure maintains excellent mechanical stability under extremely high temperatures:

  • Up to 1600°C in oxidizing atmosphere
  • Up to 1950°C in inert atmosphere

The material resists deformation, sagging, and thermal fatigue during repeated heating cycles.

Excellent Chemical Resistance

High-purity silicon carbide exhibits outstanding resistance to:

  • Ácidos
  • Álcalis
  • Ambientes de plasma
  • Gases de processo corrosivos

Compatible with aggressive semiconductor process media including:

  • SiH₄
  • NH₃
  • HCl
  • POCl₃
  • H₂Se

This ensures extended operational life in harsh processing environments.

Ultra-Low Particle Generation

Surface polishing and precision manufacturing minimize particle contamination during wafer processing.

Adequado para:

  • Advanced semiconductor nodes
  • Epitaxial deposition
  • EUV processes
  • Cleanroom manufacturing

Low particle generation helps improve wafer yield and reduce defect rates.

Alta condutividade térmica

Thermal conductivity:

160 W/m-K

As vantagens incluem:

  • Uniform wafer heating
  • Improved temperature consistency
  • Gradientes térmicos reduzidos
  • Better process repeatability

Elevada resistência mecânica

SiC ceramic provides:

  • Excellent hardness
  • High compressive strength
  • Resistência superior ao desgaste
  • Resistência ao choque térmico

Maintains dimensional stability even under long-term industrial operation.

Fully Customized Design

Customized solutions available according to customer requirements:

Wafer diameter

Slot quantity

Slot spacing

Boat dimensions

Acabamento da superfície

Structure optimization

Supported wafer sizes include:

  • 150 mm (6″)
  • 200 mm (8″)
  • 300 mm (12″)
  • Customized sizes available

Especificações técnicas

Imóveis Unidade Valor
Silicon Carbide Content % >99.5
Average Grain Size μm 4–10
Bulk Density kg/dm³ >3.14
Apparent Porosity Vol % <0.5
Vickers Hardness Kg/mm² 2800
Resistência à flexão MPa 450
Compression Strength MPa 3900
Módulo de elasticidade GPa 420
Resistência à fratura MPa·m1/2 3.5
Condutividade térmica W/m-K 160
Resistividade eléctrica Ohm·cm 10⁶–10⁸
Coeficiente de expansão térmica 10-⁶/K 4.3
Maximum Temperature (Oxidizing) °C 1600
Maximum Temperature (Inert) °C 1950

Applications of SiC Ceramic Boat Carrier

Fabrico de semicondutores

Widely used in semiconductor wafer fabrication processes including:

Diffusion Furnaces

Provides stable wafer support during high-temperature processing while minimizing thermal distortion.

Oxidation Systems

Maintains excellent dimensional accuracy and contamination control.

Rapid Thermal Processing

Low thermal expansion minimizes wafer warpage.

Ion Implantation

Excellent resistance to radiation and high-energy particle exposure.


CVD and Epitaxial Growth

Adequado para:

  • SiC epitaxy
  • GaN growth
  • Silicon deposition
  • Compound semiconductor processing

Excellent gas corrosion resistance extends service life.


SiC and Power Device Manufacturing

Utilizado para:

  • SiC power devices
  • GaN-on-SiC
  • MOSFET production
  • Advanced power modules

The thermal expansion coefficient closely matches SiC wafers, reducing thermal stress during high-temperature growth.


Indústria fotovoltaica

Adequado para:

PERC Solar Cells

Resistant to phosphorus diffusion environments.

TOPCon Production

Stable performance under repeated thermal cycles.

Thin Film Solar Manufacturing

Excellent corrosion resistance in complex process atmospheres.

Compared with quartz wafer boats, SiC boats provide:

  • Vida útil mais longa
  • Lower maintenance costs
  • Better process stability

LED and Optoelectronics

Utilizado em:

  • Mini LED
  • Micro LED
  • Compound semiconductor production

Precision slot design reduces wafer edge damage and improves handling safety.


SiC Ceramic Boat vs Quartz Boat

Comparison Item SiC Ceramic Boat Quartz Boat
Temperatura máxima 1950°C Approximately 1250°C
Vida útil 5–10 Years 1–2 Years
Condutividade térmica Excelente Baixa
Geração de partículas Muito baixo Moderado
Resistência química Excelente Médio
Resistência mecânica Elevado Baixa

SiC ceramic boats provide superior durability and lower operating costs for long-term semiconductor production.


Why Choose Our SiC Ceramic Boat Carrier

  • High purity SiC material >99.5%
  • Capacidade de maquinagem de precisão
  • Low contamination manufacturing process
  • Custom design support
  • Strict quality control
  • Stable long-term production capability
  • Fast response for customized projects

Our engineering team works closely with customers to develop customized wafer handling solutions for demanding industrial applications.


FAQ

Q1: What wafer sizes can be supported?

Standard wafer sizes include:

  • 150mm (6″)
  • 200mm (8″)
  • 300mm (12″)

Custom dimensions are available according to customer requirements.

Q2: Can slot quantity and spacing be customized?

Yes. We can customize:

  • Slot number
  • Slot pitch
  • Structure design
  • Surface treatment
  • Overall dimensions

Q3: What is the lead time?

Standard products:

4–6 weeks

Customized designs:

8–12 weeks

Lead time may vary depending on complexity.


Q4: Why choose SiC instead of quartz or graphite boats?

Em comparação com os materiais convencionais, a cerâmica SiC oferece:

  • Higher operating temperature
  • Better contamination control
  • Vida útil mais longa
  • Improved corrosion resistance
  • Superior mechanical strength

Q5: Can you manufacture according to drawings?

Yes. We support custom manufacturing based on customer drawings, samples, or detailed specifications.

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