{"id":2357,"date":"2026-06-09T03:16:56","date_gmt":"2026-06-09T03:16:56","guid":{"rendered":"https:\/\/www.xkh-ceramics.com\/?post_type=product&p=2357"},"modified":"2026-06-09T03:26:48","modified_gmt":"2026-06-09T03:26:48","slug":"device-grade-hexagonal-boron-nitride","status":"publish","type":"product","link":"https:\/\/www.xkh-ceramics.com\/tr\/product\/device-grade-hexagonal-boron-nitride\/","title":{"rendered":"Device-Grade Hexagonal Boron Nitride hBN Single Crystal for Advanced 2D Electronics and Quantum Materials"},"content":{"rendered":"

Device-Grade Hexagonal Boron Nitride (hBN) Single Crystal is an ultra-high-quality layered crystal material engineered for next-generation electronic, photonic, and quantum technologies. Produced through a proprietary atmospheric-pressure crystal growth process, these millimeter-scale single crystals exhibit exceptional structural integrity, low defect density, and outstanding dielectric and optical properties.<\/p>\n

As one of the most important van der Waals materials, hBN serves as an ideal substrate and encapsulation layer for graphene and other two-dimensional materials. Its atomically flat surface, chemical inertness, and wide bandgap make it indispensable in the fabrication of high-performance electronic devices and advanced research platforms.<\/p>\n

Independent studies have demonstrated that graphene devices fabricated on these crystals achieve carrier mobilities comparable to or exceeding those obtained using internationally recognized benchmark hBN materials.<\/p>\n

\"Device-Grade \"Device-Grade \"Device-Grade<\/p>\n

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\n<\/div>\n

\u00dcr\u00fcn \u00d6zellikleri<\/h2>\n

Ultra-High Crystal Quality<\/h3>\n

The material exhibits narrow Raman linewidths and large single-domain regions, indicating excellent crystal perfection and minimal structural defects.<\/p>\n

Ideal Substrate for 2D Materials<\/h3>\n

hBN provides an atomically smooth and contamination-free interface, reducing charge scattering and improving electronic transport in graphene and other layered materials.<\/p>\n

M\u00fckemmel Elektrik Yal\u0131t\u0131m\u0131<\/h3>\n

With a dielectric breakdown field approaching 1.64 V\/nm, hBN is widely used as a high-performance insulating layer in nanoelectronic devices.<\/p>\n

Deep Ultraviolet Optical Properties<\/h3>\n

The crystal exhibits intrinsic band-edge emission near 215 nm, making it attractive for deep-UV photonics and optoelectronic research.<\/p>\n

Large-Area Single Crystal Domains<\/h3>\n

Typical crystals feature lateral dimensions exceeding 1 mm and maintain large usable regions suitable for exfoliation and device fabrication.<\/p>\n

\"Device-Grade<\/p>\n

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\n<\/div>\n

Teknik \u00d6zellikler<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n
\u00d6\u011fe<\/th>\n\u015eartname<\/th>\n<\/tr>\n
Malzeme<\/td>\nHexagonal Boron Nitride (hBN)<\/td>\n<\/tr>\n
Crystal Structure<\/td>\nSingle Crystal<\/td>\n<\/tr>\n
Grade<\/td>\nDevice Grade<\/td>\n<\/tr>\n
Growth Method<\/td>\nProprietary Atmospheric-Pressure Growth<\/td>\n<\/tr>\n
Crystal Form<\/td>\nBulk Crystal<\/td>\n<\/tr>\n
Typical Lateral Size<\/td>\n\u2265 1 mm<\/td>\n<\/tr>\n
Surface Condition<\/td>\nNatural Growth Facets<\/td>\n<\/tr>\n
Packaging<\/td>\nChip Carrier<\/td>\n<\/tr>\n
Quantity<\/td>\n5\u201310 Crystals per Package<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

Electrical Properties<\/h3>\n\n\n\n\n
Parametre<\/td>\nTipik De\u011fer<\/td>\n<\/tr>\n
Dielectric Breakdown Strength<\/td>\n1.64 \u00b1 0.06 V\/nm<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

Optical Properties<\/h3>\n\n\n\n\n\n\n
Parametre<\/td>\nTipik De\u011fer<\/td>\n<\/tr>\n
UV Band-Edge Emission<\/td>\n~215 nm<\/td>\n<\/tr>\n
Luminescence Performance<\/td>\nState-of-the-Art<\/td>\n<\/tr>\n
Optical Transparency<\/td>\nY\u00fcksek<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

Raman Characteristics<\/h3>\n\n\n\n\n
Parametre<\/td>\nTipik De\u011fer<\/td>\n<\/tr>\n
E\u2082g Raman FWHM<\/td>\n7.88 cm\u207b\u00b9<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

Reference Device Performance<\/h3>\n\n\n\n\n\n
Parametre<\/td>\nTipik De\u011fer<\/td>\n<\/tr>\n
Graphene Mobility (300 K)<\/td>\n~80,000 cm\u00b2\/V\u00b7s<\/td>\n<\/tr>\n
Carrier Density<\/td>\n1 \u00d7 10\u00b9\u00b2 cm\u207b\u00b2<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

\"Device-Grade<\/p>\n

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\n<\/div>\n

Uygulamalar<\/h2>\n

Graphene Device Fabrication<\/h3>\n

hBN is the preferred substrate and encapsulation material for high-mobility graphene transistors, Hall devices, sensors, and quantum transport structures.<\/p>\n

Van der Waals Heterostructures<\/h3>\n

The crystal is widely used in the assembly of layered heterostructures involving graphene, MoS\u2082, WS\u2082, WSe\u2082, and other two-dimensional materials.<\/p>\n

Quantum Electronics<\/h3>\n

Researchers utilize device-grade hBN in studies of correlated electron systems, superconductivity, moir\u00e9 materials, and quantum information technologies.<\/p>\n

Nanophotonics<\/h3>\n

Its ability to support phonon-polaritons makes hBN an attractive material for nanoscale optical confinement and photonic device development.<\/p>\n

Deep-UV Optoelectronics<\/h3>\n

The intrinsic ultraviolet emission characteristics of hBN enable applications in UV light sources, detectors, and advanced optical systems.<\/p>\n

\n
\n<\/div>\n

Advantages Over Conventional hBN Materials<\/h2>\n

Compared with polycrystalline boron nitride and lower-grade crystals, device-grade hBN offers:<\/p>\n

    \n
  • Larger single-crystal domains<\/li>\n
  • Lower impurity concentration<\/li>\n
  • Reduced defect density<\/li>\n
  • Higher dielectric strength<\/li>\n
  • Improved graphene carrier mobility<\/li>\n
  • Superior optical performance<\/li>\n
  • Better reproducibility for research applications<\/li>\n<\/ul>\n

    These advantages make device-grade hBN a critical material for cutting-edge semiconductor and quantum technology research.<\/p>\n

    \n
    \n<\/div>\n

    Available Customization<\/h2>\n

    Custom solutions are available based on customer requirements, including:<\/p>\n

      \n
    • Crystal size selection<\/li>\n
    • Research-grade crystal screening<\/li>\n
    • Large-domain crystal supply<\/li>\n
    • Specialized packaging options<\/li>\n
    • Material characterization support<\/li>\n<\/ul>\n
      \n
      \n<\/div>\n

      SSS<\/h2>\n

      What makes device-grade hBN different from standard boron nitride?<\/h3>\n

      Device-grade hBN is a high-quality single crystal specifically optimized for electronic and photonic device fabrication, offering significantly lower defect density and superior electrical performance.<\/p>\n

      Why is hBN commonly used with graphene?<\/h3>\n

      Its atomically flat and electrically insulating surface minimizes charge scattering and enables graphene to achieve exceptionally high carrier mobility.<\/p>\n

      Can hBN be used in quantum device research?<\/h3>\n

      Yes. hBN is one of the most widely used materials for quantum transport studies, van der Waals heterostructures, and emerging quantum technologies.<\/p>\n

      Is the material suitable for exfoliation?<\/h3>\n

      Yes. The layered crystal structure allows mechanical exfoliation of high-quality flakes for device fabrication and scientific research.<\/p>\n

      What industries use device-grade hBN?<\/h3>\n

      The material is primarily used in semiconductor research, quantum computing, nanophotonics, advanced materials science, and university research laboratories worldwide.<\/p>","protected":false},"excerpt":{"rendered":"

      Device-Grade Hexagonal Boron Nitride (hBN) Single Crystal is an ultra-high-quality layered crystal material engineered for next-generation electronic, photonic, and quantum technologies. Produced through a proprietary atmospheric-pressure crystal growth process, these millimeter-scale single crystals exhibit exceptional structural integrity, low defect density, and outstanding dielectric and optical properties.<\/p>","protected":false},"featured_media":2369,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center 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