\n| Y\u00fczey Stabilitesi<\/td>\n | Zaman i\u00e7inde bozulur<\/td>\n | Son derece kararl\u0131<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\nPaketleme ve Ta\u015f\u0131ma<\/span><\/h1>\n\n- Temiz oda s\u0131n\u0131f\u0131 ambalaj mevcuttur<\/li>\n
- Darbeye dayan\u0131kl\u0131 ah\u015fap sand\u0131k veya vakumlu m\u00fch\u00fcrleme<\/li>\n
- Kontaminasyonsuz yar\u0131 iletken ta\u015f\u0131ma i\u00e7in tasarlanm\u0131\u015ft\u0131r<\/li>\n
- \u00d6zel boyutlar desteklenir (\u03a6380-\u03a6600 mm veya \u00f6zel tasar\u0131mlar)<\/li>\n<\/ul>\n
\nNeden Bu \u00dcr\u00fcn\u00fc Se\u00e7melisiniz<\/span><\/h1>\nBu SiC yonga plakas\u0131 ta\u015f\u0131y\u0131c\u0131 tepsisi, safl\u0131k, termal stabilite ve kontaminasyon kontrol\u00fcn\u00fcn kritik \u00f6nem ta\u015f\u0131d\u0131\u011f\u0131 yeni nesil yar\u0131 iletken \u00fcretimi i\u00e7in tasarlanm\u0131\u015ft\u0131r. Geleneksel grafit bazl\u0131 ta\u015f\u0131y\u0131c\u0131lar\u0131n yerini alarak \u00fcretim verimini \u00f6nemli \u00f6l\u00e7\u00fcde art\u0131r\u0131r, bak\u0131m maliyetlerini azalt\u0131r ve istikrarl\u0131 uzun vadeli proses performans\u0131 sa\u011flar.<\/p>\n
\nSSS<\/span><\/h1>\nS1: CVD SiC kaplaman\u0131n grafit tepsilere k\u0131yasla ana avantaj\u0131 nedir?<\/span><\/h3>\nCVD SiC kaplama, gaz penetrasyonunu ve grafit partik\u00fcl d\u00f6k\u00fclmesini \u00f6nleyen, dayan\u0131kl\u0131l\u0131\u011f\u0131 b\u00fcy\u00fck \u00f6l\u00e7\u00fcde art\u0131ran ve gofret kontaminasyonunu azaltan yo\u011fun, ultra saf bir koruyucu tabaka sa\u011flar.<\/p>\n
\nS2: Bu SiC tepsi MOCVD y\u00fcksek s\u0131cakl\u0131k proseslerinde kullan\u0131labilir mi?<\/span><\/h3>\nEvet. MOCVD uygulamalar\u0131 i\u00e7in \u00f6zel olarak tasarlanm\u0131\u015ft\u0131r ve m\u00fckemmel termal stabilite ve homojen \u0131s\u0131 da\u011f\u0131l\u0131m\u0131 ile 1100-1200\u00b0C'de g\u00fcvenilir bir \u015fekilde \u00e7al\u0131\u015fabilir.<\/p>\n
\nS3: Kaplamal\u0131 grafit tepsiler ile tam CVD SiC tepsiler aras\u0131ndaki fark nedir?<\/span><\/h3>\nKaplamal\u0131 grafit tepsiler koruyucu bir SiC katman\u0131na sahip bir grafit \u00e7ekirdek kullan\u0131rken, tam CVD SiC tepsiler daha y\u00fcksek safl\u0131k, daha iyi korozyon direnci ve daha uzun hizmet \u00f6mr\u00fcne sahip monolitik yap\u0131lard\u0131r.<\/p>","protected":false},"excerpt":{"rendered":" The SiC ceramic tray plate is a high-performance wafer carrier designed for advanced semiconductor processes such as MOCVD, epitaxy, and ICP etching. It is available in two structures: Graphite substrate with CVD SiC coating Monolithic high-purity CVD SiC tray (\u226599.99%) Compared with conventional graphite carriers, this product offers significantly improved thermal stability, corrosion resistance, and 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|
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-3-300x300.png\")
SiC seramik tepsi plakas\u0131, MOCVD, epitaksi ve ICP a\u015f\u0131nd\u0131rma gibi geli\u015fmi\u015f yar\u0131 iletken prosesler i\u00e7in tasarlanm\u0131\u015f y\u00fcksek performansl\u0131 bir wafer ta\u015f\u0131y\u0131c\u0131d\u0131r. \u0130ki yap\u0131da mevcuttur:<\/p>\n![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-1-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-2-300x300.png\")
<\/p>\n