\n| Surface Stability<\/td>\n | Degrades over time<\/td>\n | Highly stable<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\nPackaging & Handling<\/span><\/h1>\n\n- Cleanroom-grade packaging available<\/li>\n
- Shock-resistant wooden crate or vacuum sealing<\/li>\n
- Designed for contamination-free semiconductor transport<\/li>\n
- Custom sizes supported (\u03a6380\u2013\u03a6600 mm or tailored designs)<\/li>\n<\/ul>\n
\nWhy Choose This Product<\/span><\/h1>\nThis SiC wafer carrier tray is engineered for next-generation semiconductor manufacturing, where purity, thermal stability, and contamination control are critical. By replacing traditional graphite-based carriers, it significantly improves production yield, reduces maintenance costs, and ensures stable long-term process performance.<\/p>\n
\nFAQ<\/span><\/h1>\nQ1: What is the main advantage of CVD SiC coating compared to graphite trays?<\/span><\/h3>\nCVD SiC coating provides a dense, ultra-pure protective layer that prevents gas penetration and graphite particle shedding, greatly improving durability and reducing wafer contamination.<\/p>\n
\nQ2: Can this SiC tray be used in MOCVD high-temperature processes?<\/span><\/h3>\nYes. It is specifically designed for MOCVD applications and can operate reliably at 1100\u20131200\u00b0C with excellent thermal stability and uniform heat distribution.<\/p>\n
\nQ3: What is the difference between coated graphite trays and full CVD SiC trays?<\/span><\/h3>\nCoated graphite trays use a graphite core with a protective SiC layer, while full CVD SiC trays are monolithic structures with higher purity, better corrosion resistance, and longer service life.<\/p>","protected":false},"excerpt":{"rendered":" The SiC ceramic tray plate is a high-performance wafer carrier designed for advanced semiconductor processes such as MOCVD, epitaxy, and ICP etching. 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|
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-3-300x300.png\")
The SiC ceramic tray plate is a high-performance wafer carrier designed for advanced semiconductor processes such as MOCVD, epitaxy, and ICP etching. It is available in two structures:<\/p>\n![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-1-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-2-300x300.png\")
<\/p>\n