{"id":2331,"date":"2026-05-29T03:20:28","date_gmt":"2026-05-29T03:20:28","guid":{"rendered":"https:\/\/www.xkh-ceramics.com\/?post_type=product&#038;p=2331"},"modified":"2026-05-29T03:21:23","modified_gmt":"2026-05-29T03:21:23","slug":"silicon-carbide-horizontal-process-tube-for-lpcvd-cvd-semiconductor-processes","status":"publish","type":"product","link":"https:\/\/www.xkh-ceramics.com\/sv\/product\/silicon-carbide-horizontal-process-tube-for-lpcvd-cvd-semiconductor-processes\/","title":{"rendered":"Horisontellt processr\u00f6r av kiselkarbid f\u00f6r LPCVD\/CVD-halvledarprocesser"},"content":{"rendered":"<p class=\"isSelectedEnd\"><img fetchpriority=\"high\" decoding=\"async\" class=\"size-medium wp-image-2332 alignright\" src=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-2-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-2-300x300.png 300w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-2-150x150.png 150w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-2-768x768.png 768w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-2-12x12.png 12w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-2-600x600.png 600w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-2-100x100.png 100w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-2.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>Det horisontella processr\u00f6ret f\u00f6r kiselkarbid (SiC) \u00e4r utformat f\u00f6r h\u00f6gtemperaturapplikationer med LPCVD, CVD, diffusion, oxidation och gl\u00f6dgning inom halvledar-, solcells- och avancerad materialtillverkning.<\/p>\n<p class=\"isSelectedEnd\">Processr\u00f6ret \u00e4r k\u00e4rnkomponenten i reaktionskammaren i horisontella v\u00e4rmebehandlingssystem och har en direkt inverkan p\u00e5 temperaturens j\u00e4mnhet, kontamineringskontroll, processtabilitet och utrustningens totala livsl\u00e4ngd.<\/p>\n<p class=\"isSelectedEnd\">V\u00e5ra horisontella SiC-processr\u00f6r tillverkas med avancerad monolitisk 3D-utskriftsteknik i kombination med CVD-kiselkarbidbel\u00e4ggning med ultrah\u00f6g renhet. Den s\u00f6ml\u00f6sa strukturen i ett stycke eliminerar svetsfogar och monteringsrelaterade svaga punkter, vilket avsev\u00e4rt f\u00f6rb\u00e4ttrar den mekaniska tillf\u00f6rlitligheten och l\u00e4ckaget\u00e5ligheten under kontinuerlig drift vid h\u00f6ga temperaturer.<\/p>\n<p class=\"isSelectedEnd\">J\u00e4mf\u00f6rt med konventionella processr\u00f6r av kvarts ger kiselkarbid betydligt h\u00f6gre v\u00e4rmeledningsf\u00f6rm\u00e5ga, b\u00e4ttre motst\u00e5ndskraft mot termiska st\u00f6tar, \u00f6verl\u00e4gsen korrosionsbest\u00e4ndighet och l\u00e4ngre livsl\u00e4ngd, s\u00e4rskilt i aggressiva oxiderande och klorhaltiga processmilj\u00f6er.<\/p>\n<p class=\"isSelectedEnd\">Produkten \u00e4r optimerad f\u00f6r rena processmilj\u00f6er f\u00f6r halvledare som kr\u00e4ver l\u00e5g partikelgenerering, l\u00e5g metallf\u00f6rorening och stabil termisk prestanda upp till 1250\u00b0C.<\/p>\n<div contenteditable=\"false\">\n<hr \/>\n<\/div>\n<h1>Viktiga funktioner<\/h1>\n<h2><img decoding=\"async\" class=\"size-medium wp-image-2333 alignright\" src=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-1-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-1-300x300.png 300w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-1-150x150.png 150w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-1-768x768.png 768w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-1-12x12.png 12w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-1-600x600.png 600w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-1-100x100.png 100w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-1.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>Monolitisk SiC-struktur i ett stycke<\/h2>\n<p class=\"isSelectedEnd\">Den integrerade 3D-printade kiselkarbidkroppen eliminerar s\u00f6mmar, l\u00f6dpunkter och potentiella l\u00e4ckagev\u00e4gar som finns i traditionella sammansatta strukturer.<\/p>\n<p class=\"isSelectedEnd\">F\u00f6rm\u00e5ner inkluderar:<\/p>\n<ul data-spread=\"false\">\n<li>H\u00f6gre strukturell stabilitet<\/li>\n<li>F\u00f6rb\u00e4ttrad vakuumintegritet<\/li>\n<li>B\u00e4ttre dimensionell \u00f6verensst\u00e4mmelse<\/li>\n<li>Minskad koncentration av termisk stress<\/li>\n<\/ul>\n<h2>CVD SiC-bel\u00e4ggning med ultrah\u00f6g renhet<\/h2>\n<p class=\"isSelectedEnd\">Den t\u00e4ta CVD-bel\u00e4ggningen av kiselkarbid ger:<\/p>\n<ul data-spread=\"false\">\n<li>Ytf\u00f6roreningar under 5 ppm<\/li>\n<li>Utm\u00e4rkt kemisk inerthet<\/li>\n<li>Minskad partikelf\u00f6rorening<\/li>\n<li>\u00d6verl\u00e4gsen motst\u00e5ndskraft mot oxidation och klorhaltiga gaser<\/li>\n<\/ul>\n<p class=\"isSelectedEnd\">Detta g\u00f6r processr\u00f6ret l\u00e4mpligt f\u00f6r avancerade applikationer f\u00f6r termisk bearbetning av halvledare.<\/p>\n<h2>Utm\u00e4rkt v\u00e4rmeledningsf\u00f6rm\u00e5ga<\/h2>\n<p class=\"isSelectedEnd\">Kiselkarbid ger mycket h\u00f6gre v\u00e4rmeledningsf\u00f6rm\u00e5ga \u00e4n kvarts eller aluminiumoxid, vilket bidrar till att uppn\u00e5:<\/p>\n<ul data-spread=\"false\">\n<li>Snabbare termisk respons<\/li>\n<li>F\u00f6rb\u00e4ttrad axiell och radiell temperaturj\u00e4mnhet<\/li>\n<li>Stabila f\u00f6rh\u00e5llanden f\u00f6r bearbetning av wafers<\/li>\n<\/ul>\n<h2>Enast\u00e5ende motst\u00e5ndskraft mot termisk chock<\/h2>\n<p class=\"isSelectedEnd\">R\u00f6ret kan motst\u00e5 upprepade snabba v\u00e4rme- och kylcykler utan sprickbildning, deformation eller bel\u00e4ggningsspallation.<\/p>\n<h2>L\u00e5ng livsl\u00e4ngd<\/h2>\n<p class=\"isSelectedEnd\">J\u00e4mf\u00f6rt med processr\u00f6r av kvarts erbjuder SiC-r\u00f6r:<\/p>\n<ul data-spread=\"false\">\n<li>L\u00e4ngre bytesintervall<\/li>\n<li>L\u00e4gre underh\u00e5llsfrekvens<\/li>\n<li>Minskad stillest\u00e5ndstid f\u00f6r kammaren<\/li>\n<li>F\u00f6rb\u00e4ttrad total \u00e4gandekostnad (TCO)<\/li>\n<\/ul>\n<div contenteditable=\"false\">\n<hr \/>\n<\/div>\n<h1>Typiska till\u00e4mpningar<\/h1>\n<h2><img decoding=\"async\" class=\"size-medium wp-image-2334 alignright\" src=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-300x300.png 300w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-150x150.png 150w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-768x768.png 768w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-12x12.png 12w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-600x600.png 600w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-100x100.png 100w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>Halvledartillverkning<\/h2>\n<p class=\"isSelectedEnd\">L\u00e4mplig f\u00f6r:<\/p>\n<ul data-spread=\"false\">\n<li>LPCVD-system<\/li>\n<li>Utrustning f\u00f6r CVD-deponering<\/li>\n<li>Oxidationsugnar<\/li>\n<li>Diffusionsugnar<\/li>\n<li>Gl\u00f6dgningssystem<\/li>\n<li>Processer f\u00f6r termisk behandling av wafers<\/li>\n<\/ul>\n<h2>Fotovoltaisk industri<\/h2>\n<p class=\"isSelectedEnd\">Anv\u00e4nds i:<\/p>\n<ul data-spread=\"false\">\n<li>Diffusionsbehandling av solceller<\/li>\n<li>Passivering av ytan<\/li>\n<li>Tunnfilmsdeponering<\/li>\n<li>Behandling av wafer i h\u00f6g temperatur<\/li>\n<\/ul>\n<h2>Avancerad materialbearbetning<\/h2>\n<p class=\"isSelectedEnd\">G\u00e4ller f\u00f6r:<\/p>\n<ul data-spread=\"false\">\n<li>Karboniseringsprocesser<\/li>\n<li>Nitreringsbehandling<\/li>\n<li>Funktionell tunnfilmsbildning<\/li>\n<li>Aktivering och modifiering av ytan<\/li>\n<\/ul>\n<div contenteditable=\"false\">\n<hr \/>\n<\/div>\n<h1>Processkompatibilitet<\/h1>\n<h2>Kompatibla processatmosf\u00e4rer<\/h2>\n<ul data-spread=\"false\">\n<li>Syre (O\u2082)<\/li>\n<li>Kv\u00e4ve (N\u2082)<\/li>\n<li>Inerta gaser med h\u00f6g renhet<\/li>\n<li>Kontrollerade klorinneh\u00e5llande gaser<\/li>\n<li>Oxiderande atmosf\u00e4rer<\/li>\n<\/ul>\n<h2>Typiskt processf\u00f6nster<\/h2>\n<table>\n<tbody>\n<tr>\n<th>Parameter<\/th>\n<th>Specifikation<\/th>\n<\/tr>\n<tr>\n<td>Maximal kontinuerlig driftstemperatur<\/td>\n<td>1250\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>Tryckomr\u00e5de<\/td>\n<td>LPCVD vakuum till n\u00e4ra atmosf\u00e4risk<\/td>\n<\/tr>\n<tr>\n<td>Motst\u00e5nd mot termisk chock<\/td>\n<td>Utm\u00e4rkt<\/td>\n<\/tr>\n<tr>\n<td>T\u00e4thet mot l\u00e4ckage<\/td>\n<td>\u2264 1\u00d710-\u2079 Pa-m\u00b3\/s<\/td>\n<\/tr>\n<tr>\n<td>Ytj\u00e4mnhet<\/td>\n<td>Ra \u2264 0,8-1,6 \u00b5m<\/td>\n<\/tr>\n<tr>\n<td>Bel\u00e4ggningens renhet<\/td>\n<td>\uff1c 5 ppm<\/td>\n<\/tr>\n<tr>\n<td>Substratets orenhet<\/td>\n<td>\uff1c 300 ppm<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<div contenteditable=\"false\">\n<hr \/>\n<\/div>\n<h1>Tekniska specifikationer<\/h1>\n<table>\n<tbody>\n<tr>\n<td>F\u00f6rem\u00e5l<\/td>\n<td>Specifikation<\/td>\n<\/tr>\n<tr>\n<td>Produktens namn<\/td>\n<td>Horisontellt processr\u00f6r f\u00f6r kiselkarbid<\/td>\n<\/tr>\n<tr>\n<td>Material<\/td>\n<td>Kiselkarbid med h\u00f6g renhet<\/td>\n<\/tr>\n<tr>\n<td>Bel\u00e4ggning<\/td>\n<td>CVD SiC-bel\u00e4ggning<\/td>\n<\/tr>\n<tr>\n<td>Tillverkningsprocess<\/td>\n<td>Monolitisk 3D-utskrift<\/td>\n<\/tr>\n<tr>\n<td>Maximal driftstemperatur<\/td>\n<td>\u2264 1250\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>Termisk konduktivitet<\/td>\n<td>H\u00f6g<\/td>\n<\/tr>\n<tr>\n<td>Motst\u00e5nd mot termisk chock<\/td>\n<td>Utm\u00e4rkt<\/td>\n<\/tr>\n<tr>\n<td>Motst\u00e5ndskraft mot korrosion<\/td>\n<td>Utm\u00e4rkt<\/td>\n<\/tr>\n<tr>\n<td>Ytj\u00e4mnhet<\/td>\n<td>Ra \u2264 0,8-1,6 \u00b5m<\/td>\n<\/tr>\n<tr>\n<td>F\u00f6roreningar i bel\u00e4ggningen<\/td>\n<td>\uff1c 5 ppm<\/td>\n<\/tr>\n<tr>\n<td>T\u00e4thet mot l\u00e4ckage<\/td>\n<td>\u2264 1\u00d710-\u2079 Pa-m\u00b3\/s<\/td>\n<\/tr>\n<tr>\n<td>Typiska till\u00e4mpningar<\/td>\n<td>LPCVD \/ CVD \/ Diffusion \/ Oxidation<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<div contenteditable=\"false\">\n<hr \/>\n<\/div>\n<h1>F\u00f6rdelar j\u00e4mf\u00f6rt med traditionella processr\u00f6r<\/h1>\n<table>\n<tbody>\n<tr>\n<td>Fastighet<\/td>\n<td>SiC-processr\u00f6r<\/td>\n<td>Kvartsr\u00f6r<\/td>\n<td>R\u00f6r av aluminiumoxid<\/td>\n<\/tr>\n<tr>\n<td>Termisk konduktivitet<\/td>\n<td>H\u00f6g<\/td>\n<td>L\u00e5g<\/td>\n<td>L\u00e5g<\/td>\n<\/tr>\n<tr>\n<td>Motst\u00e5nd mot termisk chock<\/td>\n<td>Utm\u00e4rkt<\/td>\n<td>Svag<\/td>\n<td>M\u00e5ttlig<\/td>\n<\/tr>\n<tr>\n<td>Motst\u00e5ndskraft mot korrosion<\/td>\n<td>Utm\u00e4rkt<\/td>\n<td>M\u00e5ttlig<\/td>\n<td>Bra<\/td>\n<\/tr>\n<tr>\n<td>Partikelkontroll<\/td>\n<td>Utm\u00e4rkt<\/td>\n<td>M\u00e5ttlig<\/td>\n<td>M\u00e5ttlig<\/td>\n<\/tr>\n<tr>\n<td>Livsl\u00e4ngd<\/td>\n<td>L\u00e5ng<\/td>\n<td>Kort<\/td>\n<td>Medium<\/td>\n<\/tr>\n<tr>\n<td>Stabilitet vid h\u00f6ga temperaturer<\/td>\n<td>Utm\u00e4rkt<\/td>\n<td>M\u00e5ttlig<\/td>\n<td>Bra<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<div contenteditable=\"false\">\n<hr \/>\n<\/div>\n<h1>Anpassningsalternativ<\/h1>\n<p class=\"isSelectedEnd\">Anpassade specifikationer \u00e4r tillg\u00e4ngliga enligt kundens krav p\u00e5 utrustning, inklusive:<\/p>\n<ul data-spread=\"false\">\n<li>R\u00f6rets diameter och l\u00e4ngd<\/li>\n<li>Optimering av v\u00e4ggtjocklek<\/li>\n<li>Fl\u00e4ns- och gr\u00e4nssnittskonstruktioner<\/li>\n<li>Funktionella gasportar<\/li>\n<li>Konfigurationer f\u00f6r inre\/yttre bel\u00e4ggning<\/li>\n<li>Grad av ytpolering<\/li>\n<li>Standarder f\u00f6r renlighet<\/li>\n<\/ul>\n<div contenteditable=\"false\">\n<hr \/>\n<\/div>\n<h1>VANLIGA FR\u00c5GOR<\/h1>\n<h2>F1: Varf\u00f6r v\u00e4lja kiselkarbid ist\u00e4llet f\u00f6r kvarts processr\u00f6r?<\/h2>\n<p class=\"isSelectedEnd\">Kiselkarbid ger h\u00f6gre v\u00e4rmeledningsf\u00f6rm\u00e5ga, l\u00e4gre kontaminering, b\u00e4ttre motst\u00e5ndskraft mot termisk chock och betydligt l\u00e4ngre livsl\u00e4ngd \u00e4n kvarts, s\u00e4rskilt i halvledarprocesser med h\u00f6ga temperaturer.<\/p>\n<h2>F2: Vilka processer \u00e4r kompatibla med detta r\u00f6r?<\/h2>\n<p class=\"isSelectedEnd\">R\u00f6ret \u00e4r l\u00e4mpligt f\u00f6r LPCVD, CVD, diffusion, oxidation, gl\u00f6dgning, passivering och andra applikationer f\u00f6r termisk bearbetning vid h\u00f6ga temperaturer.<\/p>\n<h2>F3: Kan r\u00f6ret anv\u00e4ndas i klorhaltiga atmosf\u00e4rer?<\/h2>\n<p>Ja, CVD SiC-bel\u00e4ggningen ger utm\u00e4rkt motst\u00e5ndskraft mot kontrollerade klorhaltiga processmilj\u00f6er.<\/p>","protected":false},"excerpt":{"rendered":"<p class=\"isSelectedEnd\">Det horisontella processr\u00f6ret f\u00f6r kiselkarbid (SiC) \u00e4r utformat f\u00f6r h\u00f6gtemperaturapplikationer med LPCVD, CVD, diffusion, oxidation och gl\u00f6dgning inom halvledar-, solcells- och avancerad materialtillverkning.<\/p>\n<p class=\"isSelectedEnd\">Processr\u00f6ret \u00e4r k\u00e4rnkomponenten i reaktionskammaren i horisontella v\u00e4rmebehandlingssystem och har en direkt inverkan p\u00e5 temperaturens j\u00e4mnhet, kontamineringskontroll, processtabilitet och utrustningens totala livsl\u00e4ngd.<\/p>","protected":false},"featured_media":2334,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center 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