\n| Ytans stabilitet<\/td>\n | Nedbrytning \u00f6ver tid<\/td>\n | Mycket stabil<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\nF\u00f6rpackning & hantering<\/span><\/h1>\n\n- Renrumsklassad f\u00f6rpackning tillg\u00e4nglig<\/li>\n
- St\u00f6tt\u00e5lig tr\u00e4l\u00e5da eller vakuumf\u00f6rsegling<\/li>\n
- Utformad f\u00f6r kontamineringsfri transport av halvledare<\/li>\n
- St\u00f6d f\u00f6r anpassade storlekar (\u03a6380-\u03a6600 mm eller skr\u00e4ddarsydda konstruktioner)<\/li>\n<\/ul>\n
\nVarf\u00f6r v\u00e4lja denna produkt<\/span><\/h1>\nDetta b\u00e4rartr\u00e5g f\u00f6r SiC-wafers \u00e4r konstruerat f\u00f6r n\u00e4sta generations halvledartillverkning, d\u00e4r renhet, termisk stabilitet och kontamineringskontroll \u00e4r avg\u00f6rande. Genom att ers\u00e4tta traditionella grafitbaserade b\u00e4rare f\u00f6rb\u00e4ttrar den avsev\u00e4rt produktionsutbytet, minskar underh\u00e5llskostnaderna och s\u00e4kerst\u00e4ller stabila l\u00e5ngsiktiga processprestanda.<\/p>\n
\nVANLIGA FR\u00c5GOR<\/span><\/h1>\nF1: Vilken \u00e4r den st\u00f6rsta f\u00f6rdelen med CVD SiC-bel\u00e4ggning j\u00e4mf\u00f6rt med grafitbrickor?<\/span><\/h3>\nCVD SiC-bel\u00e4ggningen ger ett t\u00e4tt, ultrarent skyddsskikt som f\u00f6rhindrar gasintr\u00e4ngning och att grafitpartiklar lossnar, vilket avsev\u00e4rt f\u00f6rb\u00e4ttrar h\u00e5llbarheten och minskar kontamineringen av wafern.<\/p>\n
\nF2: Kan detta SiC-tr\u00e5g anv\u00e4ndas i MOCVD-processer med h\u00f6g temperatur?<\/span><\/h3>\nJa, den \u00e4r speciellt utformad f\u00f6r MOCVD-applikationer och kan arbeta tillf\u00f6rlitligt vid 1100-1200\u00b0C med utm\u00e4rkt termisk stabilitet och j\u00e4mn v\u00e4rmef\u00f6rdelning.<\/p>\n
\nF3: Vad \u00e4r skillnaden mellan belagda grafitbrickor och full CVD SiC-brickor?<\/span><\/h3>\nBelagda grafitbrickor anv\u00e4nder en grafitk\u00e4rna med ett skyddande SiC-lager, medan full CVD SiC-brickor \u00e4r monolitiska strukturer med h\u00f6gre renhet, b\u00e4ttre korrosionsbest\u00e4ndighet och l\u00e4ngre livsl\u00e4ngd.<\/p>","protected":false},"excerpt":{"rendered":" The SiC ceramic tray plate is a high-performance wafer carrier designed for advanced semiconductor processes such as MOCVD, epitaxy, and ICP etching. It is available in two structures: Graphite substrate with CVD SiC coating Monolithic high-purity CVD SiC tray (\u226599.99%) Compared with conventional graphite carriers, this product offers significantly improved thermal stability, corrosion resistance, and 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|
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-3-300x300.png\")
Den keramiska SiC-plattan \u00e4r en h\u00f6gpresterande waferb\u00e4rare som \u00e4r utformad f\u00f6r avancerade halvledarprocesser som MOCVD, epitaxi och ICP-etsning. Den finns tillg\u00e4nglig i tv\u00e5 strukturer:<\/p>\n![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-1-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-2-300x300.png\")
<\/p>\n