\n| Stabilno\u015b\u0107 powierzchni<\/td>\n | Z czasem ulega degradacji<\/td>\n | Wysoka stabilno\u015b\u0107<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\nPakowanie i obs\u0142uga<\/span><\/h1>\n\n- Dost\u0119pne opakowania do pomieszcze\u0144 czystych<\/li>\n
- Odporna na wstrz\u0105sy drewniana skrzynia lub uszczelnienie pr\u00f3\u017cniowe<\/li>\n
- Zaprojektowany do transportu p\u00f3\u0142przewodnik\u00f3w bez zanieczyszcze\u0144<\/li>\n
- Obs\u0142ugiwane rozmiary niestandardowe (\u03a6380-\u03a6600 mm lub dostosowane projekty)<\/li>\n<\/ul>\n
\nDlaczego warto wybra\u0107 ten produkt<\/span><\/h1>\nTa taca na p\u0142ytki SiC zosta\u0142a zaprojektowana z my\u015bl\u0105 o produkcji p\u00f3\u0142przewodnik\u00f3w nowej generacji, gdzie czysto\u015b\u0107, stabilno\u015b\u0107 termiczna i kontrola zanieczyszcze\u0144 maj\u0105 kluczowe znaczenie. Zast\u0119puj\u0105c tradycyjne no\u015bniki oparte na graficie, znacznie poprawia wydajno\u015b\u0107 produkcji, zmniejsza koszty konserwacji i zapewnia stabiln\u0105 d\u0142ugoterminow\u0105 wydajno\u015b\u0107 procesu.<\/p>\n
\nFAQ<\/span><\/h1>\nP1: Jaka jest g\u0142\u00f3wna zaleta pow\u0142oki CVD SiC w por\u00f3wnaniu z tacami grafitowymi?<\/span><\/h3>\nPow\u0142oka CVD SiC zapewnia g\u0119st\u0105, ultra czyst\u0105 warstw\u0119 ochronn\u0105, kt\u00f3ra zapobiega przenikaniu gaz\u00f3w i zrzucaniu cz\u0105stek grafitu, znacznie poprawiaj\u0105c trwa\u0142o\u015b\u0107 i zmniejszaj\u0105c zanieczyszczenie wafla.<\/p>\n
\nP2: Czy ta taca SiC mo\u017ce by\u0107 u\u017cywana w procesach wysokotemperaturowych MOCVD?<\/span><\/h3>\nTak, zosta\u0142 zaprojektowany specjalnie do zastosowa\u0144 MOCVD i mo\u017ce pracowa\u0107 niezawodnie w temperaturze 1100-1200\u00b0C z doskona\u0142\u0105 stabilno\u015bci\u0105 termiczn\u0105 i r\u00f3wnomiernym rozprowadzaniem ciep\u0142a.<\/p>\n
\nP3: Jaka jest r\u00f3\u017cnica mi\u0119dzy powlekanymi tacami grafitowymi a pe\u0142nymi tacami CVD SiC?<\/span><\/h3>\nPowlekane tace grafitowe wykorzystuj\u0105 rdze\u0144 grafitowy z ochronn\u0105 warstw\u0105 SiC, podczas gdy pe\u0142ne tace CVD SiC s\u0105 strukturami monolitycznymi o wy\u017cszej czysto\u015bci, lepszej odporno\u015bci na korozj\u0119 i d\u0142u\u017cszej \u017cywotno\u015bci.<\/p>","protected":false},"excerpt":{"rendered":" The SiC ceramic tray plate is a high-performance wafer carrier designed for advanced semiconductor processes such as MOCVD, epitaxy, and ICP etching. It is available in two structures: Graphite substrate with CVD SiC coating Monolithic high-purity CVD SiC tray (\u226599.99%) Compared with conventional graphite carriers, this product offers significantly improved thermal stability, corrosion resistance, and 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|
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-3-300x300.png\")
P\u0142ytka ceramiczna SiC jest wysokowydajnym no\u015bnikiem p\u0142ytek zaprojektowanym do zaawansowanych proces\u00f3w p\u00f3\u0142przewodnikowych, takich jak MOCVD, epitaksja i trawienie ICP. Dost\u0119pna jest w dw\u00f3ch wersjach:<\/p>\n![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-1-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-2-300x300.png\")
<\/p>\n