\n| Stabiliteit van het oppervlak<\/td>\n | Degradeert na verloop van tijd<\/td>\n | Zeer stabiel<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\nVerpakking en verwerking<\/span><\/h1>\n\n- Cleanroom-verpakking beschikbaar<\/li>\n
- Schokbestendige houten kist of vacu\u00fcmverpakking<\/li>\n
- Ontworpen voor besmettingsvrij transport van halfgeleiders<\/li>\n
- Aangepaste maten ondersteund (\u03a6 380-\u03a6 600 mm of op maat gemaakte ontwerpen)<\/li>\n<\/ul>\n
\nWaarom dit product kiezen<\/span><\/h1>\nDeze SiC wafer carrier tray is ontworpen voor de volgende generatie halfgeleiderproductie, waar zuiverheid, thermische stabiliteit en controle op vervuiling van cruciaal belang zijn. Door de traditionele dragers op basis van grafiet te vervangen, verbetert de productieopbrengst aanzienlijk, dalen de onderhoudskosten en zijn de procesprestaties op lange termijn stabiel.<\/p>\n
\nFAQ<\/span><\/h1>\nV1: Wat is het belangrijkste voordeel van CVD SiC coating in vergelijking met grafietschalen?<\/span><\/h3>\nCVD SiC-coating zorgt voor een dichte, ultrazuivere beschermlaag die gaspenetratie en het loskomen van grafietdeeltjes voorkomt, de duurzaamheid sterk verbetert en vervuiling van de wafer vermindert.<\/p>\n
\nV2: Kan deze SiC-bak worden gebruikt in MOCVD-processen bij hoge temperaturen?<\/span><\/h3>\nJa. Hij is speciaal ontworpen voor MOCVD-toepassingen en kan betrouwbaar werken bij 1100-1200 \u00b0C met een uitstekende thermische stabiliteit en gelijkmatige warmteverdeling.<\/p>\n
\nV3: Wat is het verschil tussen gecoate grafietschalen en volledige CVD SiC-schalen?<\/span><\/h3>\nGecoate grafietschalen gebruiken een grafietkern met een beschermende SiC-laag, terwijl volledige CVD SiC-schalen monolithische structuren zijn met een hogere zuiverheid, betere corrosiebestendigheid en langere levensduur.<\/p>","protected":false},"excerpt":{"rendered":" The SiC ceramic tray plate is a high-performance wafer carrier designed for advanced semiconductor processes such as MOCVD, epitaxy, and ICP etching. It is available in two structures: Graphite substrate with CVD SiC coating Monolithic high-purity CVD SiC tray (\u226599.99%) Compared with conventional graphite carriers, this product offers significantly improved thermal stability, corrosion resistance, and 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|
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-3-300x300.png\")
De plaat van SiC-keramiek is een hoogwaardige waferdrager die ontworpen is voor geavanceerde halfgeleiderprocessen zoals MOCVD, epitaxy en ICP-etsen. Hij is verkrijgbaar in twee structuren:<\/p>\n![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-1-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-2-300x300.png\")
<\/p>\n