{"id":2110,"date":"2026-05-12T06:26:35","date_gmt":"2026-05-12T06:26:35","guid":{"rendered":"https:\/\/www.xkh-ceramics.com\/?post_type=product&#038;p=2110"},"modified":"2026-05-12T06:28:57","modified_gmt":"2026-05-12T06:28:57","slug":"full-cvd-sic-wafer-carrier-tray-plate-for-semiconductor-mocvd-etching-equipment","status":"publish","type":"product","link":"https:\/\/www.xkh-ceramics.com\/it\/product\/full-cvd-sic-wafer-carrier-tray-plate-for-semiconductor-mocvd-etching-equipment\/","title":{"rendered":"Piastra del vassoio del trasportatore del wafer di SiC di CVD completo per l'attrezzatura a semiconduttore di MOCVD &amp; dell'incisione"},"content":{"rendered":"<p data-start=\"199\" data-end=\"387\"><img fetchpriority=\"high\" decoding=\"async\" class=\"size-medium wp-image-2111 alignright\" src=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-3-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-3-300x300.png 300w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-3-150x150.png 150w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-3-768x768.png 768w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-3-12x12.png 12w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-3-600x600.png 600w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-3-100x100.png 100w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-3.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>La piastra vassoio in ceramica SiC \u00e8 un supporto per wafer ad alte prestazioni progettato per processi di semiconduttori avanzati come MOCVD, epitassia e incisione ICP. \u00c8 disponibile in due strutture:<\/p>\n<ul data-start=\"389\" data-end=\"486\">\n<li data-section-id=\"1a2m83y\" data-start=\"389\" data-end=\"434\">Substrato di grafite con rivestimento SiC CVD<\/li>\n<li data-section-id=\"h6gq41\" data-start=\"435\" data-end=\"486\">Vassoio monolitico in SiC CVD ad alta purezza (\u226599,99%)<\/li>\n<\/ul>\n<p data-start=\"488\" data-end=\"728\">Rispetto ai carrier di grafite convenzionali, questo prodotto offre una stabilit\u00e0 termica, una resistenza alla corrosione e una durata di vita nettamente migliori, rendendolo ideale per gli ambienti di produzione di semiconduttori ad alta temperatura.<\/p>\n<p data-start=\"730\" data-end=\"847\">\u00c8 ampiamente utilizzato nella produzione di LED GaN, nella fabbricazione di semiconduttori di potenza e nei sistemi di lavorazione di precisione dei wafer.<\/p>\n<hr data-start=\"849\" data-end=\"852\" \/>\n<h1 data-section-id=\"1j1pcx4\" data-start=\"854\" data-end=\"885\"><span role=\"text\">Caratteristiche e vantaggi principali<\/span><\/h1>\n<h3 data-section-id=\"1alapmz\" data-start=\"887\" data-end=\"931\"><span role=\"text\">1. Resistenza alle altissime temperature<\/span><\/h3>\n<ul data-start=\"932\" data-end=\"1084\">\n<li data-section-id=\"n8q3t9\" data-start=\"932\" data-end=\"970\">Funzionamento stabile a 1100-1200\u00b0C+<\/li>\n<li data-section-id=\"zbjl5k\" data-start=\"971\" data-end=\"1033\">Adatto agli ambienti difficili di crescita MOCVD ed epitassiale<\/li>\n<li data-section-id=\"1p7r2f0\" data-start=\"1034\" data-end=\"1084\">Nessuna deformazione in caso di cicli termici di lunga durata<\/li>\n<\/ul>\n<h3 data-section-id=\"1xbme7x\" data-start=\"1086\" data-end=\"1132\"><span role=\"text\">2. Protezione superiore del rivestimento SiC CVD<\/span><\/h3>\n<ul data-start=\"1133\" data-end=\"1295\">\n<li data-section-id=\"1yg8xxq\" data-start=\"1133\" data-end=\"1163\">Purezza fino al 99,999% SiC<\/li>\n<li data-section-id=\"fof224\" data-start=\"1164\" data-end=\"1228\">Il rivestimento denso impedisce la penetrazione dei gas e l'erosione del substrato<\/li>\n<li data-section-id=\"i9f016\" data-start=\"1229\" data-end=\"1295\">Elimina la contaminazione da particelle di grafite nella lavorazione dei wafer<\/li>\n<\/ul>\n<h3 data-section-id=\"r23teu\" data-start=\"1297\" data-end=\"1349\"><span role=\"text\">3. Eccellente resistenza alla corrosione e agli agenti chimici<\/span><\/h3>\n<ul data-start=\"1350\" data-end=\"1472\">\n<li data-section-id=\"jgfj1d\" data-start=\"1350\" data-end=\"1412\">Resistente a HF, H\u2082SO\u2084, HCl e ai gas di processo reattivi.<\/li>\n<li data-section-id=\"1yalk8d\" data-start=\"1413\" data-end=\"1472\">Ideale per gli ambienti aggressivi di incisione dei semiconduttori<\/li>\n<\/ul>\n<h3 data-section-id=\"ughzy4\" data-start=\"1474\" data-end=\"1528\"><span role=\"text\">4. Alta conducibilit\u00e0 termica e riscaldamento uniforme<\/span><\/h3>\n<ul data-start=\"1529\" data-end=\"1642\">\n<li data-section-id=\"10oy89q\" data-start=\"1529\" data-end=\"1594\">Assicura una distribuzione uniforme della temperatura sulla superficie del wafer<\/li>\n<li data-section-id=\"1rsv4ef\" data-start=\"1595\" data-end=\"1642\">Migliora la qualit\u00e0 del film e la stabilit\u00e0 del processo<\/li>\n<\/ul>\n<h3 data-section-id=\"rhgagc\" data-start=\"1644\" data-end=\"1672\"><span role=\"text\">5. Lunga durata di vita<\/span><\/h3>\n<ul data-start=\"1673\" data-end=\"1796\">\n<li data-section-id=\"1wgev4f\" data-start=\"1673\" data-end=\"1743\">Durata fino a 4 volte superiore rispetto ai tradizionali vassoi a base di grafite<\/li>\n<li data-section-id=\"tsrdbt\" data-start=\"1744\" data-end=\"1796\">Riduzione dei tempi di inattivit\u00e0 e della frequenza di sostituzione<\/li>\n<\/ul>\n<p><img decoding=\"async\" class=\"alignnone size-medium wp-image-2114\" src=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-300x300.png 300w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-150x150.png 150w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-768x768.png 768w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-12x12.png 12w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-600x600.png 600w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-100x100.png 100w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/> <img decoding=\"async\" class=\"alignnone size-medium wp-image-2113\" src=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-1-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-1-300x300.png 300w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-1-150x150.png 150w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-1-768x768.png 768w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-1-12x12.png 12w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-1-600x600.png 600w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-1-100x100.png 100w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-1.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/> <img loading=\"lazy\" decoding=\"async\" class=\"alignnone size-medium wp-image-2112\" src=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-2-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-2-300x300.png 300w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-2-150x150.png 150w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-2-768x768.png 768w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-2-12x12.png 12w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-2-600x600.png 600w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-2-100x100.png 100w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-2.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/p>\n<hr data-start=\"1798\" data-end=\"1801\" \/>\n<h1 data-section-id=\"10k15yz\" data-start=\"1803\" data-end=\"1833\"><span role=\"text\">Specifiche tecniche<\/span><\/h1>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"1835\" data-end=\"2207\">\n<thead data-start=\"1835\" data-end=\"1856\">\n<tr data-start=\"1835\" data-end=\"1856\">\n<th class=\"last:pe-10\" data-start=\"1835\" data-end=\"1847\" data-col-size=\"sm\">Parametro<\/th>\n<th class=\"last:pe-10\" data-start=\"1847\" data-end=\"1856\" data-col-size=\"md\">Valore<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"1877\" data-end=\"2207\">\n<tr data-start=\"1877\" data-end=\"1938\">\n<td data-start=\"1877\" data-end=\"1893\" data-col-size=\"sm\">Tipo di materiale<\/td>\n<td data-start=\"1893\" data-end=\"1938\" data-col-size=\"md\">Grafite + rivestimento SiC CVD \/ SiC completamente CVD<\/td>\n<\/tr>\n<tr data-start=\"1939\" data-end=\"1993\">\n<td data-start=\"1939\" data-end=\"1952\" data-col-size=\"sm\">Purezza SiC<\/td>\n<td data-start=\"1952\" data-end=\"1993\" data-col-size=\"md\">\u226599,9% (rivestito), \u226599,99% (monolitico)<\/td>\n<\/tr>\n<tr data-start=\"1994\" data-end=\"2032\">\n<td data-start=\"1994\" data-end=\"2011\" data-col-size=\"sm\">Gamma di diametri<\/td>\n<td data-start=\"2011\" data-end=\"2032\" data-col-size=\"md\">\u03a6380 mm - \u03a6600 mm<\/td>\n<\/tr>\n<tr data-start=\"2033\" data-end=\"2072\">\n<td data-start=\"2033\" data-end=\"2057\" data-col-size=\"sm\">Temperatura di esercizio<\/td>\n<td data-col-size=\"md\" data-start=\"2057\" data-end=\"2072\">1100-1200\u00b0C<\/td>\n<\/tr>\n<tr data-start=\"2073\" data-end=\"2104\">\n<td data-start=\"2073\" data-end=\"2096\" data-col-size=\"sm\">Conduttivit\u00e0 termica<\/td>\n<td data-col-size=\"md\" data-start=\"2096\" data-end=\"2104\">Alto<\/td>\n<\/tr>\n<tr data-start=\"2105\" data-end=\"2163\">\n<td data-start=\"2105\" data-end=\"2128\" data-col-size=\"sm\">Resistenza alla corrosione<\/td>\n<td data-col-size=\"md\" data-start=\"2128\" data-end=\"2163\">Eccellente (resistente a HF, H\u2082SO\u2084)<\/td>\n<\/tr>\n<tr data-start=\"2164\" data-end=\"2207\">\n<td data-start=\"2164\" data-end=\"2179\" data-col-size=\"sm\">Vita utile<\/td>\n<td data-start=\"2179\" data-end=\"2207\" data-col-size=\"md\">~4\u00d7 vassoi a base di grafite<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<hr data-start=\"2209\" data-end=\"2212\" \/>\n<h1 data-section-id=\"18cvqw\" data-start=\"2214\" data-end=\"2237\"><span role=\"text\">Aree di applicazione<\/span><\/h1>\n<h3 data-section-id=\"bm5nu5\" data-start=\"2239\" data-end=\"2274\"><span role=\"text\">Produzione di semiconduttori<\/span><\/h3>\n<ul data-start=\"2275\" data-end=\"2438\">\n<li data-section-id=\"pooj76\" data-start=\"2275\" data-end=\"2326\">MOCVD (Deposizione di vapore chimico organico metallico)<\/li>\n<li data-section-id=\"c8v0nb\" data-start=\"2327\" data-end=\"2370\">Crescita epitassiale di wafer (GaN, SiC, ecc.)<\/li>\n<li data-section-id=\"15uw81h\" data-start=\"2371\" data-end=\"2396\">Processi di incisione ICP<\/li>\n<li data-section-id=\"1xtyszn\" data-start=\"2397\" data-end=\"2438\">Sistemi di manipolazione dei wafer ad alta precisione<\/li>\n<\/ul>\n<h3 data-section-id=\"yf7wep\" data-start=\"2440\" data-end=\"2460\"><span role=\"text\">Industria dei LED<\/span><\/h3>\n<ul data-start=\"2461\" data-end=\"2545\">\n<li data-section-id=\"b1ebdf\" data-start=\"2461\" data-end=\"2508\">Produzione di LED blu e bianchi ad alta luminosit\u00e0<\/li>\n<li data-section-id=\"9w14a9\" data-start=\"2509\" data-end=\"2545\">Dispositivi optoelettronici a base di GaN<\/li>\n<\/ul>\n<h3 data-section-id=\"d5g3k9\" data-start=\"2547\" data-end=\"2575\"><span role=\"text\">Elettronica avanzata<\/span><\/h3>\n<ul data-start=\"2576\" data-end=\"2670\">\n<li data-section-id=\"14t88vj\" data-start=\"2576\" data-end=\"2600\">Semiconduttori di potenza<\/li>\n<li data-section-id=\"8rvytg\" data-start=\"2601\" data-end=\"2627\">Dispositivi ad alta frequenza<\/li>\n<li data-section-id=\"4tdco8\" data-start=\"2628\" data-end=\"2670\">Sistemi di deposizione di precisione a film sottile<\/li>\n<\/ul>\n<hr data-start=\"2672\" data-end=\"2675\" \/>\n<h1 data-section-id=\"1umg5ep\" data-start=\"2677\" data-end=\"2735\"><span role=\"text\">Vantaggi in termini di prestazioni rispetto ai tradizionali vassoi in grafite<\/span><\/h1>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"2737\" data-end=\"3069\">\n<thead data-start=\"2737\" data-end=\"2783\">\n<tr data-start=\"2737\" data-end=\"2783\">\n<th class=\"last:pe-10\" data-start=\"2737\" data-end=\"2744\" data-col-size=\"sm\">Articolo<\/th>\n<th class=\"last:pe-10\" data-start=\"2744\" data-end=\"2760\" data-col-size=\"sm\">Vassoio in grafite<\/th>\n<th class=\"last:pe-10\" data-start=\"2760\" data-end=\"2783\" data-col-size=\"sm\">Vassoio rivestito di SiC CVD<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"2831\" data-end=\"3069\">\n<tr data-start=\"2831\" data-end=\"2878\">\n<td data-start=\"2831\" data-end=\"2856\" data-col-size=\"sm\">Resistenza alla temperatura<\/td>\n<td data-col-size=\"sm\" data-start=\"2856\" data-end=\"2865\">Medio<\/td>\n<td data-col-size=\"sm\" data-start=\"2865\" data-end=\"2878\">Molto alto<\/td>\n<\/tr>\n<tr data-start=\"2879\" data-end=\"2922\">\n<td data-start=\"2879\" data-end=\"2902\" data-col-size=\"sm\">Resistenza alla corrosione<\/td>\n<td data-col-size=\"sm\" data-start=\"2902\" data-end=\"2909\">Povero<\/td>\n<td data-col-size=\"sm\" data-start=\"2909\" data-end=\"2922\">Eccellente<\/td>\n<\/tr>\n<tr data-start=\"2923\" data-end=\"2971\">\n<td data-start=\"2923\" data-end=\"2948\" data-col-size=\"sm\">Contaminazione da particelle<\/td>\n<td data-col-size=\"sm\" data-start=\"2948\" data-end=\"2960\">Alto rischio<\/td>\n<td data-col-size=\"sm\" data-start=\"2960\" data-end=\"2971\">Minimo<\/td>\n<\/tr>\n<tr data-start=\"2972\" data-end=\"3010\">\n<td data-start=\"2972\" data-end=\"2987\" data-col-size=\"sm\">Vita utile<\/td>\n<td data-col-size=\"sm\" data-start=\"2987\" data-end=\"2995\">Breve<\/td>\n<td data-col-size=\"sm\" data-start=\"2995\" data-end=\"3010\">3-4 volte pi\u00f9 a lungo<\/td>\n<\/tr>\n<tr data-start=\"3011\" data-end=\"3069\">\n<td data-start=\"3011\" data-end=\"3031\" data-col-size=\"sm\">Stabilit\u00e0 della superficie<\/td>\n<td data-col-size=\"sm\" data-start=\"3031\" data-end=\"3052\">Si degrada nel tempo<\/td>\n<td data-col-size=\"sm\" data-start=\"3052\" data-end=\"3069\">Altamente stabile<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<hr data-start=\"3071\" data-end=\"3074\" \/>\n<h1 data-section-id=\"7pt5v4\" data-start=\"3076\" data-end=\"3102\"><span role=\"text\">Imballaggio e manipolazione<\/span><\/h1>\n<ul data-start=\"3103\" data-end=\"3313\">\n<li data-section-id=\"a3kyzw\" data-start=\"3103\" data-end=\"3142\">Disponibilit\u00e0 di confezioni per camera bianca<\/li>\n<li data-section-id=\"3ss3f2\" data-start=\"3143\" data-end=\"3193\">Cassa di legno resistente agli urti o sigillata sottovuoto<\/li>\n<li data-section-id=\"iuz9t\" data-start=\"3194\" data-end=\"3253\">Progettato per il trasporto di semiconduttori senza contaminazione<\/li>\n<li data-section-id=\"11l6t4c\" data-start=\"3254\" data-end=\"3313\">Sono supportate dimensioni personalizzate (\u03a6380-\u03a6600 mm o progetti su misura)<\/li>\n<\/ul>\n<hr data-start=\"3315\" data-end=\"3318\" \/>\n<h1 data-section-id=\"62o8y8\" data-start=\"3320\" data-end=\"3349\"><span role=\"text\">Perch\u00e9 scegliere questo prodotto<\/span><\/h1>\n<p data-start=\"3350\" data-end=\"3688\">Questo vassoio porta wafer SiC \u00e8 stato progettato per la produzione di semiconduttori di nuova generazione, dove la purezza, la stabilit\u00e0 termica e il controllo della contaminazione sono fondamentali. Sostituendo i tradizionali carrier a base di grafite, migliora significativamente la resa produttiva, riduce i costi di manutenzione e garantisce prestazioni di processo stabili a lungo termine.<\/p>\n<hr data-start=\"3690\" data-end=\"3693\" \/>\n<h1 data-section-id=\"1iusff4\" data-start=\"3695\" data-end=\"3704\"><span role=\"text\">FAQ<\/span><\/h1>\n<h3 data-section-id=\"1m9x0lv\" data-start=\"3706\" data-end=\"3791\"><span role=\"text\">D1: Qual \u00e8 il principale vantaggio del rivestimento SiC CVD rispetto ai vassoi di grafite?<\/span><\/h3>\n<p data-start=\"3792\" data-end=\"3978\">Il rivestimento SiC CVD fornisce uno strato protettivo denso e ultra-puro che impedisce la penetrazione di gas e la dispersione di particelle di grafite, migliorando notevolmente la durata e riducendo la contaminazione dei wafer.<\/p>\n<hr data-start=\"3980\" data-end=\"3983\" \/>\n<h3 data-section-id=\"7rg8ob\" data-start=\"3985\" data-end=\"4059\"><span role=\"text\">D2: Questo vassoio SiC pu\u00f2 essere utilizzato nei processi MOCVD ad alta temperatura?<\/span><\/h3>\n<p data-start=\"4060\" data-end=\"4219\">S\u00ec. \u00c8 stato progettato specificamente per applicazioni MOCVD e pu\u00f2 funzionare in modo affidabile a 1100-1200\u00b0C con un'eccellente stabilit\u00e0 termica e una distribuzione uniforme del calore.<\/p>\n<hr data-start=\"4221\" data-end=\"4224\" \/>\n<h3 data-section-id=\"ox8w5l\" data-start=\"4226\" data-end=\"4314\"><span role=\"text\">D3: Qual \u00e8 la differenza tra i vassoi in grafite rivestita e i vassoi SiC completamente CVD?<\/span><\/h3>\n<p data-start=\"4315\" data-end=\"4510\" data-is-last-node=\"\" data-is-only-node=\"\">I vassoi di grafite rivestiti utilizzano un nucleo di grafite con uno strato protettivo di SiC, mentre i vassoi di SiC completamente CVD sono strutture monolitiche con una purezza superiore, una migliore resistenza alla corrosione e una maggiore durata.<\/p>","protected":false},"excerpt":{"rendered":"<p>The SiC ceramic tray plate is a high-performance wafer carrier designed for advanced semiconductor processes such as MOCVD, epitaxy, and ICP etching. It is available in two structures: Graphite substrate with CVD SiC coating Monolithic high-purity CVD SiC tray (\u226599.99%) Compared with conventional graphite carriers, this product offers significantly improved thermal stability, corrosion resistance, and 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