{"id":2100,"date":"2026-05-12T03:59:56","date_gmt":"2026-05-12T03:59:56","guid":{"rendered":"https:\/\/www.xkh-ceramics.com\/?post_type=product&#038;p=2100"},"modified":"2026-05-12T03:59:56","modified_gmt":"2026-05-12T03:59:56","slug":"customized-sic-ceramic-end-effector-for-wafer-handling","status":"publish","type":"product","link":"https:\/\/www.xkh-ceramics.com\/it\/product\/customized-sic-ceramic-end-effector-for-wafer-handling\/","title":{"rendered":"Effettore finale in ceramica SiC personalizzato per la manipolazione dei wafer"},"content":{"rendered":"<p data-start=\"737\" data-end=\"989\"><img fetchpriority=\"high\" decoding=\"async\" class=\"size-medium wp-image-2101 alignright\" src=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Customized-SiC-Ceramic-End-Effector-for-Wafer-Handling-3-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Customized-SiC-Ceramic-End-Effector-for-Wafer-Handling-3-300x300.png 300w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Customized-SiC-Ceramic-End-Effector-for-Wafer-Handling-3-150x150.png 150w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Customized-SiC-Ceramic-End-Effector-for-Wafer-Handling-3-768x768.png 768w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Customized-SiC-Ceramic-End-Effector-for-Wafer-Handling-3-12x12.png 12w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Customized-SiC-Ceramic-End-Effector-for-Wafer-Handling-3-600x600.png 600w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Customized-SiC-Ceramic-End-Effector-for-Wafer-Handling-3-100x100.png 100w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Customized-SiC-Ceramic-End-Effector-for-Wafer-Handling-3.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>L'end effector in ceramica di carburo di silicio (SiC) \u00e8 un componente di alta precisione per la manipolazione dei wafer progettato per i sistemi di automazione dei semiconduttori, compresi i robot per il trasferimento dei wafer, i sistemi AMHS, le apparecchiature per la litografia EUV e gli strumenti di processo ad alta temperatura.<\/p>\n<p data-start=\"991\" data-end=\"1308\">Realizzato in SiC CVD di elevata purezza o in SSiC ingegnerizzato, questo dispositivo finale offre una rigidit\u00e0 eccezionale, una generazione di particelle bassissima e un'eccezionale stabilit\u00e0 termica e chimica. \u00c8 ampiamente utilizzato nelle fabbriche di semiconduttori da 300 mm e nodi avanzati, dove il controllo della contaminazione e la precisione di posizionamento sono fondamentali.<\/p>\n<p data-start=\"1310\" data-end=\"1470\">Rispetto ai tradizionali end effector in alluminio o quarzo, le soluzioni in ceramica SiC migliorano significativamente la stabilit\u00e0 del processo, la sicurezza dei wafer e la durata delle apparecchiature.<\/p>\n<hr data-start=\"1472\" data-end=\"1475\" \/>\n<h2 data-section-id=\"ruuu6i\" data-start=\"1477\" data-end=\"1494\">Vantaggi principali<\/h2>\n<h3 data-section-id=\"1igp1it\" data-start=\"1496\" data-end=\"1532\">Contaminazione particellare ultrabassa<\/h3>\n<ul data-start=\"1533\" data-end=\"1664\">\n<li data-section-id=\"1lx1qmw\" data-start=\"1533\" data-end=\"1587\">Generazione di particelle: &lt;0,1\/cm\u00b2 (conforme a SEMI F57)<\/li>\n<li data-section-id=\"8gkyog\" data-start=\"1588\" data-end=\"1618\">Nessuna contaminazione da ioni metallici<\/li>\n<li data-section-id=\"m28nyw\" data-start=\"1619\" data-end=\"1664\">Ideale per processi EUV e nodi avanzati<\/li>\n<\/ul>\n<hr data-start=\"1666\" data-end=\"1669\" \/>\n<h3 data-section-id=\"nha58o\" data-start=\"1671\" data-end=\"1710\">Elevata rigidit\u00e0 e stabilit\u00e0 di precisione<\/h3>\n<ul data-start=\"1711\" data-end=\"1837\">\n<li data-section-id=\"n58wtx\" data-start=\"1711\" data-end=\"1740\">Modulo di Young: ~420 GPa<\/li>\n<li data-section-id=\"wiw01d\" data-start=\"1741\" data-end=\"1790\">Previene il disallineamento del wafer indotto dalle vibrazioni<\/li>\n<li data-section-id=\"kx1hzh\" data-start=\"1791\" data-end=\"1837\">Assicura un trasferimento robotico stabile ad alta velocit\u00e0<\/li>\n<\/ul>\n<hr data-start=\"1839\" data-end=\"1842\" \/>\n<h3 data-section-id=\"2ge170\" data-start=\"1844\" data-end=\"1875\">Eccellente stabilit\u00e0 termica<\/h3>\n<ul data-start=\"1876\" data-end=\"2015\">\n<li data-section-id=\"ibg0yp\" data-start=\"1876\" data-end=\"1927\">Temperatura di esercizio: fino a 1600\u00b0C (ossidante)<\/li>\n<li data-section-id=\"1e7mmjn\" data-start=\"1928\" data-end=\"1963\">Fino a 1950\u00b0C (atmosfera inerte)<\/li>\n<li data-section-id=\"j5ees9\" data-start=\"1964\" data-end=\"2015\">Adatto agli ambienti estremi dei semiconduttori<\/li>\n<\/ul>\n<hr data-start=\"2017\" data-end=\"2020\" \/>\n<h3 data-section-id=\"1twxua8\" data-start=\"2022\" data-end=\"2063\">Resistenza superiore agli agenti chimici e al plasma<\/h3>\n<ul data-start=\"2064\" data-end=\"2212\">\n<li data-section-id=\"x6lsw\" data-start=\"2064\" data-end=\"2120\">Resistente ad acidi, alcali e ambienti al plasma<\/li>\n<li data-section-id=\"1c1d6qm\" data-start=\"2121\" data-end=\"2169\">Nessuna corrosione nelle camere CVD \/ PVD \/ etching<\/li>\n<li data-section-id=\"1o7zcce\" data-start=\"2170\" data-end=\"2212\">Stabile nei gas di processo SiH\u2084, NH\u2083, HCl<\/li>\n<\/ul>\n<hr data-start=\"2214\" data-end=\"2217\" \/>\n<h3 data-section-id=\"14bamzt\" data-start=\"2219\" data-end=\"2252\">Senza usura e di lunga durata<\/h3>\n<ul data-start=\"2253\" data-end=\"2380\">\n<li data-section-id=\"10g9b8f\" data-start=\"2253\" data-end=\"2283\">Durezza Vickers: ~2800 HV<\/li>\n<li data-section-id=\"14dvdy4\" data-start=\"2284\" data-end=\"2335\">Nessuna dispersione di particelle durante il funzionamento a lungo termine<\/li>\n<li data-section-id=\"12rqc97\" data-start=\"2336\" data-end=\"2380\">Eccellente durata della superficie (Ra &lt; 0,2 \u03bcm)<\/li>\n<\/ul>\n<hr data-start=\"2382\" data-end=\"2385\" \/>\n<h2 data-section-id=\"1xqplm3\" data-start=\"2387\" data-end=\"2418\">Caratteristiche strutturali e di design<\/h2>\n<h3 data-section-id=\"1nh5g76\" data-start=\"2420\" data-end=\"2457\">Geometria di precisione per la manipolazione dei wafer<\/h3>\n<p data-start=\"2458\" data-end=\"2467\">Supporti:<\/p>\n<ul data-start=\"2468\" data-end=\"2596\">\n<li data-section-id=\"15tpg53\" data-start=\"2468\" data-end=\"2508\">Wafer da 150 mm \/ 200 mm \/ 300 mm \/ 450 mm<\/li>\n<li data-section-id=\"1rnwp5m\" data-start=\"2509\" data-end=\"2563\">Design con presa ai bordi \/ allineamento delle tacche \/ supporto piatto<\/li>\n<li data-section-id=\"qm27un\" data-start=\"2564\" data-end=\"2596\">Integrazione del braccio robotico personalizzato<\/li>\n<\/ul>\n<hr data-start=\"2598\" data-end=\"2601\" \/>\n<h3 data-section-id=\"1yw23gm\" data-start=\"2603\" data-end=\"2643\">Struttura leggera ad alta rigidit\u00e0<\/h3>\n<ul data-start=\"2644\" data-end=\"2768\">\n<li data-section-id=\"tt3pyh\" data-start=\"2644\" data-end=\"2677\">Elevato rapporto rigidit\u00e0\/peso<\/li>\n<li data-section-id=\"1sb17em\" data-start=\"2678\" data-end=\"2721\">Adatto per sistemi robotici ad alta velocit\u00e0<\/li>\n<li data-section-id=\"1j6yie2\" data-start=\"2722\" data-end=\"2768\">Riduce al minimo la deflessione dinamica durante il movimento<\/li>\n<\/ul>\n<hr data-start=\"2770\" data-end=\"2773\" \/>\n<h3 data-section-id=\"97w9la\" data-start=\"2775\" data-end=\"2809\">Lavorazione delle superfici ultra-pulite<\/h3>\n<ul data-start=\"2810\" data-end=\"2905\">\n<li data-section-id=\"1lu1i7j\" data-start=\"2810\" data-end=\"2844\">Rettifica e lucidatura di precisione<\/li>\n<li data-section-id=\"1amctgl\" data-start=\"2845\" data-end=\"2870\">Bassa rugosit\u00e0 superficiale<\/li>\n<li data-section-id=\"1js4nxo\" data-start=\"2871\" data-end=\"2905\">Struttura compatibile con la camera bianca<\/li>\n<\/ul>\n<hr data-start=\"2907\" data-end=\"2910\" \/>\n<h3 data-section-id=\"50i47d\" data-start=\"2912\" data-end=\"2944\">Interfaccia di ingegneria personalizzata<\/h3>\n<ul data-start=\"2945\" data-end=\"3063\">\n<li data-section-id=\"1dle0c1\" data-start=\"2945\" data-end=\"2981\">Compatibilit\u00e0 con il montaggio del braccio robotico<\/li>\n<li data-section-id=\"19fhsyz\" data-start=\"2982\" data-end=\"3018\">Integrazione OEM per i sistemi AMHS<\/li>\n<li data-section-id=\"3wahd3\" data-start=\"3019\" data-end=\"3063\">Posizioni dei fori e design dei dispositivi personalizzati<\/li>\n<\/ul>\n<hr data-start=\"3065\" data-end=\"3068\" \/>\n<h2 data-section-id=\"rb24ym\" data-start=\"3070\" data-end=\"3089\">Opzioni di materiale<\/h2>\n<h3 data-section-id=\"87v3o9\" data-start=\"3091\" data-end=\"3124\">Carburo di silicio CVD (SiC CVD)<\/h3>\n<ul data-start=\"3125\" data-end=\"3232\">\n<li data-section-id=\"1qjlbs6\" data-start=\"3125\" data-end=\"3146\">Purezza ultraelevata<\/li>\n<li data-section-id=\"1856ohe\" data-start=\"3147\" data-end=\"3198\">Ideale per processi EUV \/ semiconduttori avanzati<\/li>\n<li data-section-id=\"1lwpzbt\" data-start=\"3199\" data-end=\"3232\">Livello di contaminazione bassissimo<\/li>\n<\/ul>\n<hr data-start=\"3234\" data-end=\"3237\" \/>\n<h3 data-section-id=\"gwj4n0\" data-start=\"3239\" data-end=\"3274\">Carburo di silicio sinterizzato (SSiC)<\/h3>\n<ul data-start=\"3275\" data-end=\"3402\">\n<li data-section-id=\"1hi8oju\" data-start=\"3275\" data-end=\"3312\">Elevata forza e resistenza all'usura<\/li>\n<li data-section-id=\"1rnk9x7\" data-start=\"3313\" data-end=\"3363\">Adatto ai sistemi industriali di movimentazione dei wafer<\/li>\n<li data-section-id=\"67fp04\" data-start=\"3364\" data-end=\"3402\">Eccellente equilibrio costi-prestazioni<\/li>\n<\/ul>\n<hr data-start=\"3404\" data-end=\"3407\" \/>\n<h2 data-section-id=\"1cgu054\" data-start=\"3409\" data-end=\"3436\">Specifiche tecniche<\/h2>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"3438\" data-end=\"3888\">\n<thead data-start=\"3438\" data-end=\"3462\">\n<tr data-start=\"3438\" data-end=\"3462\">\n<th class=\"last:pe-10\" data-start=\"3438\" data-end=\"3445\" data-col-size=\"sm\">Articolo<\/th>\n<th class=\"last:pe-10\" data-start=\"3445\" data-end=\"3462\" data-col-size=\"sm\">Specifiche<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"3487\" data-end=\"3888\">\n<tr data-start=\"3487\" data-end=\"3516\">\n<td data-start=\"3487\" data-end=\"3498\" data-col-size=\"sm\">Materiale<\/td>\n<td data-col-size=\"sm\" data-start=\"3498\" data-end=\"3516\">CVD SiC \/ SSiC<\/td>\n<\/tr>\n<tr data-start=\"3517\" data-end=\"3536\">\n<td data-start=\"3517\" data-end=\"3526\" data-col-size=\"sm\">La purezza<\/td>\n<td data-start=\"3526\" data-end=\"3536\" data-col-size=\"sm\">&gt;99,5%<\/td>\n<\/tr>\n<tr data-start=\"3537\" data-end=\"3561\">\n<td data-start=\"3537\" data-end=\"3550\" data-col-size=\"sm\">Dimensione dei grani<\/td>\n<td data-col-size=\"sm\" data-start=\"3550\" data-end=\"3561\">4-10 \u03bcm<\/td>\n<\/tr>\n<tr data-start=\"3562\" data-end=\"3587\">\n<td data-start=\"3562\" data-end=\"3572\" data-col-size=\"sm\">Densit\u00e0<\/td>\n<td data-col-size=\"sm\" data-start=\"3572\" data-end=\"3587\">&gt;3,14 g\/cm\u00b3<\/td>\n<\/tr>\n<tr data-start=\"3588\" data-end=\"3611\">\n<td data-start=\"3588\" data-end=\"3599\" data-col-size=\"sm\">Durezza<\/td>\n<td data-col-size=\"sm\" data-start=\"3599\" data-end=\"3611\">~2800 HV<\/td>\n<\/tr>\n<tr data-start=\"3612\" data-end=\"3643\">\n<td data-start=\"3612\" data-end=\"3632\" data-col-size=\"sm\">Resistenza alla flessione<\/td>\n<td data-col-size=\"sm\" data-start=\"3632\" data-end=\"3643\">450 MPa<\/td>\n<\/tr>\n<tr data-start=\"3644\" data-end=\"3673\">\n<td data-start=\"3644\" data-end=\"3662\" data-col-size=\"sm\">Modulo elastico<\/td>\n<td data-col-size=\"sm\" data-start=\"3662\" data-end=\"3673\">420 GPa<\/td>\n<\/tr>\n<tr data-start=\"3674\" data-end=\"3710\">\n<td data-start=\"3674\" data-end=\"3697\" data-col-size=\"sm\">Conduttivit\u00e0 termica<\/td>\n<td data-col-size=\"sm\" data-start=\"3697\" data-end=\"3710\">160 W\/m-K<\/td>\n<\/tr>\n<tr data-start=\"3711\" data-end=\"3768\">\n<td data-start=\"3711\" data-end=\"3729\" data-col-size=\"sm\">Temperatura massima<\/td>\n<td data-col-size=\"sm\" data-start=\"3729\" data-end=\"3768\">1600\u00b0C (ossidazione) \/ 1950\u00b0C (inerte)<\/td>\n<\/tr>\n<tr data-start=\"3769\" data-end=\"3810\">\n<td data-start=\"3769\" data-end=\"3794\" data-col-size=\"sm\">Resistivit\u00e0 elettrica<\/td>\n<td data-col-size=\"sm\" data-start=\"3794\" data-end=\"3810\">10\u2076-10\u2078 \u03a9-cm<\/td>\n<\/tr>\n<tr data-start=\"3811\" data-end=\"3851\">\n<td data-start=\"3811\" data-end=\"3828\" data-col-size=\"sm\">Finitura superficiale<\/td>\n<td data-col-size=\"sm\" data-start=\"3828\" data-end=\"3851\">Lucidato ultra fine<\/td>\n<\/tr>\n<tr data-start=\"3852\" data-end=\"3888\">\n<td data-start=\"3852\" data-end=\"3859\" data-col-size=\"sm\">Dimensione<\/td>\n<td data-start=\"3859\" data-end=\"3888\" data-col-size=\"sm\">Personalizzato (wafer da 150-450 mm)<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<hr data-start=\"3890\" data-end=\"3893\" \/>\n<h2 data-section-id=\"mu966k\" data-start=\"3895\" data-end=\"3910\">Applicazioni<\/h2>\n<h3 data-section-id=\"6yu2ul\" data-start=\"3912\" data-end=\"3943\">Produzione di semiconduttori<\/h3>\n<ul data-start=\"3944\" data-end=\"4097\">\n<li data-section-id=\"49bdmt\" data-start=\"3944\" data-end=\"3978\">Manipolazione dei wafer per litografia EUV<\/li>\n<li data-section-id=\"11xdzhh\" data-start=\"3979\" data-end=\"4017\">Sistemi di trasferimento robotizzato di wafer da 300 mm<\/li>\n<li data-section-id=\"ox84z0\" data-start=\"4018\" data-end=\"4060\">Automazione della camera CVD \/ PVD \/ di incisione<\/li>\n<li data-section-id=\"teg2xm\" data-start=\"4061\" data-end=\"4097\">Trasporto di wafer con impianto ionico<\/li>\n<\/ul>\n<hr data-start=\"4099\" data-end=\"4102\" \/>\n<h3 data-section-id=\"sf9357\" data-start=\"4104\" data-end=\"4140\">Materiali avanzati per semiconduttori<\/h3>\n<ul data-start=\"4141\" data-end=\"4248\">\n<li data-section-id=\"iiuum6\" data-start=\"4141\" data-end=\"4176\">Manipolazione di wafer di dispositivi di potenza SiC<\/li>\n<li data-section-id=\"se94ot\" data-start=\"4177\" data-end=\"4211\">Sistemi di produzione per epitassia GaN<\/li>\n<li data-section-id=\"3yciq1\" data-start=\"4212\" data-end=\"4248\">Processi MOCVD ad alta temperatura<\/li>\n<\/ul>\n<hr data-start=\"4250\" data-end=\"4253\" \/>\n<h3 data-section-id=\"11khwnl\" data-start=\"4255\" data-end=\"4286\">Industria fotovoltaica e LED<\/h3>\n<ul data-start=\"4287\" data-end=\"4389\">\n<li data-section-id=\"q29bxq\" data-start=\"4287\" data-end=\"4319\">Linee di automazione per wafer solari<\/li>\n<li data-section-id=\"10mww1v\" data-start=\"4320\" data-end=\"4361\">Sistemi di trasferimento Micro-LED \/ Mini-LED<\/li>\n<li data-section-id=\"dp5vhg\" data-start=\"4362\" data-end=\"4389\">Manipolazione dei wafer di zaffiro<\/li>\n<\/ul>\n<hr data-start=\"4391\" data-end=\"4394\" \/>\n<h3 data-section-id=\"j366yc\" data-start=\"4396\" data-end=\"4428\">Automazione e robotica (AMHS)<\/h3>\n<ul data-start=\"4429\" data-end=\"4533\">\n<li data-section-id=\"fpj2it\" data-start=\"4429\" data-end=\"4459\">Bracci robotici per il trasporto di wafer<\/li>\n<li data-section-id=\"e4e8u3\" data-start=\"4460\" data-end=\"4492\">Sistemi di automazione per camere bianche<\/li>\n<li data-section-id=\"k0rhy6\" data-start=\"4493\" data-end=\"4533\">Sistemi di movimentazione dei materiali ad alta velocit\u00e0<\/li>\n<\/ul>\n<hr data-start=\"4535\" data-end=\"4538\" \/>\n<h3 data-section-id=\"1c5bbdr\" data-start=\"4540\" data-end=\"4573\">Ricerca e attrezzature di alta gamma<\/h3>\n<ul data-start=\"4574\" data-end=\"4679\">\n<li data-section-id=\"1sbej07\" data-start=\"4574\" data-end=\"4604\">Fabbricazione di dispositivi quantistici<\/li>\n<li data-section-id=\"5u37w7\" data-start=\"4605\" data-end=\"4641\">Sistemi criogenici di manipolazione dei wafer<\/li>\n<li data-section-id=\"i12e24\" data-start=\"4642\" data-end=\"4679\">Imballaggio avanzato (IC 3D \/ MEMS)<\/li>\n<\/ul>\n<hr data-start=\"4681\" data-end=\"4684\" \/>\n<h2 data-section-id=\"vm5qii\" data-start=\"4686\" data-end=\"4715\">Riepilogo dei vantaggi del prodotto<\/h2>\n<ul data-start=\"4717\" data-end=\"4996\">\n<li data-section-id=\"r4wmoo\" data-start=\"4717\" data-end=\"4750\">Zero rischi di contaminazione da metalli<\/li>\n<li data-section-id=\"w80eyq\" data-start=\"4751\" data-end=\"4797\">Rigidit\u00e0 elevatissima per una gestione precisa<\/li>\n<li data-section-id=\"ovhb2l\" data-start=\"4798\" data-end=\"4842\">Eccellente stabilit\u00e0 termica e chimica<\/li>\n<li data-section-id=\"1pry50x\" data-start=\"4843\" data-end=\"4878\">Lunga durata con usura minima<\/li>\n<li data-section-id=\"16clm2x\" data-start=\"4879\" data-end=\"4919\">Compatibile con l'automazione della camera bianca<\/li>\n<li data-section-id=\"1usfebt\" data-start=\"4920\" data-end=\"4956\">Personalizzabile per tutte le dimensioni dei wafer<\/li>\n<li data-section-id=\"whnxc2\" data-start=\"4957\" data-end=\"4996\">Adatto per EUV e nodi avanzati<\/li>\n<\/ul>\n<hr data-start=\"4998\" data-end=\"5001\" \/>\n<h2 data-section-id=\"rnyyeg\" data-start=\"5003\" data-end=\"5027\">Opzioni di personalizzazione<img decoding=\"async\" class=\"size-medium wp-image-2102 alignright\" src=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Customized-SiC-Ceramic-End-Effector-for-Wafer-Handling-2-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Customized-SiC-Ceramic-End-Effector-for-Wafer-Handling-2-300x300.png 300w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Customized-SiC-Ceramic-End-Effector-for-Wafer-Handling-2-150x150.png 150w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Customized-SiC-Ceramic-End-Effector-for-Wafer-Handling-2-768x768.png 768w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Customized-SiC-Ceramic-End-Effector-for-Wafer-Handling-2-12x12.png 12w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Customized-SiC-Ceramic-End-Effector-for-Wafer-Handling-2-600x600.png 600w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Customized-SiC-Ceramic-End-Effector-for-Wafer-Handling-2-100x100.png 100w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Customized-SiC-Ceramic-End-Effector-for-Wafer-Handling-2.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/h2>\n<p data-start=\"5029\" data-end=\"5067\">Supportiamo la personalizzazione completa OEM\/ODM:<\/p>\n<ul data-start=\"5069\" data-end=\"5319\">\n<li data-section-id=\"pzy3qt\" data-start=\"5069\" data-end=\"5127\">Geometria dell'effettore (piatto \/ presa sul bordo \/ allineamento della tacca)<\/li>\n<li data-section-id=\"173oufn\" data-start=\"5128\" data-end=\"5168\">Compatibilit\u00e0 con le dimensioni dei wafer (150-450 mm)<\/li>\n<li data-section-id=\"1sh3bgb\" data-start=\"5169\" data-end=\"5195\">Progettazione dell'interfaccia del robot<\/li>\n<li data-section-id=\"1ma3ck\" data-start=\"5196\" data-end=\"5252\">Rivestimento superficiale (antistatico\/idrofobico opzionale)<\/li>\n<li data-section-id=\"7mw706\" data-start=\"5253\" data-end=\"5289\">Ottimizzazione della tolleranza di precisione<\/li>\n<li data-section-id=\"w4j63d\" data-start=\"5290\" data-end=\"5319\">Finitura in camera bianca<\/li>\n<\/ul>\n<hr data-start=\"5321\" data-end=\"5324\" \/>\n<h2 data-section-id=\"1hryhf7\" data-start=\"5326\" data-end=\"5332\">FAQ<\/h2>\n<h3 data-section-id=\"1mpzh4o\" data-start=\"5334\" data-end=\"5384\">Q1: Perch\u00e9 utilizzare SiC invece di alluminio o quarzo?<\/h3>\n<ul data-start=\"5385\" data-end=\"5556\">\n<li data-section-id=\"1xvhlf0\" data-start=\"5385\" data-end=\"5437\">Alluminio: generazione di particelle + problemi di ossidazione<\/li>\n<li data-section-id=\"1q7gghy\" data-start=\"5438\" data-end=\"5489\">Quarzo: fragile + scarsa resistenza agli shock termici<\/li>\n<li data-section-id=\"vgt2b3\" data-start=\"5490\" data-end=\"5556\">SiC: la migliore combinazione di rigidit\u00e0, pulizia e durata<\/li>\n<\/ul>\n<hr data-start=\"5558\" data-end=\"5561\" \/>\n<h3 data-section-id=\"1cxfupn\" data-start=\"5563\" data-end=\"5599\">D2: Pu\u00f2 supportare wafer da 450 mm?<\/h3>\n<p data-start=\"5600\" data-end=\"5667\">S\u00ec, sono disponibili progetti personalizzati per i sistemi di movimentazione dei wafer da 450 mm.<\/p>\n<hr data-start=\"5669\" data-end=\"5672\" \/>\n<h3 data-section-id=\"a4nxop\" data-start=\"5674\" data-end=\"5717\">D3: \u00c8 adatto alla litografia EUV?<\/h3>\n<p data-start=\"5718\" data-end=\"5803\">S\u00ec. Gli effettori in SiC soddisfano i requisiti di compatibilit\u00e0 con le particelle e il vuoto ultrabassi.<\/p>\n<hr data-start=\"5805\" data-end=\"5808\" \/>\n<h3 data-section-id=\"1ajqsm3\" data-start=\"5810\" data-end=\"5872\">D4: Pu\u00f2 essere utilizzato in sistemi sotto vuoto e ad alta temperatura?<\/h3>\n<p data-start=\"5873\" data-end=\"5951\">S\u00ec. Il SiC si comporta in modo stabile nel vuoto, nel plasma e in ambienti ad alta temperatura.<\/p>","protected":false},"excerpt":{"rendered":"<p>The Silicon Carbide (SiC) Ceramic End Effector is a high-precision wafer handling component designed for semiconductor automation systems, including wafer transfer robots, AMHS systems, EUV lithography equipment, and high-temperature process tools. Made from high-purity CVD SiC or engineered SSiC, this end effector delivers exceptional rigidity, ultra-low particle generation, and outstanding thermal and chemical stability. It [&hellip;]<\/p>\n","protected":false},"featured_media":2104,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-opacity":"","overlay-gradient":""}}},"product_brand":[],"product_cat":[23],"product_tag":[192,191,190,193,194,195,188,104,189,187],"class_list":["post-2100","product","type-product","status-publish","has-post-thumbnail","product_cat-silicon-carbide-sic","product_tag-300mm-wafer-robot-arm","product_tag-amhs-wafer-transfer-tool","product_tag-cvd-sic-end-effector","product_tag-euv-wafer-handling-component","product_tag-high-precision-ceramic-end-effector","product_tag-semiconductor-automation-parts","product_tag-semiconductor-robot-arm","product_tag-sic-ceramic-end-effector","product_tag-silicon-carbide-wafer-handler","product_tag-wafer-handling-end-effector","desktop-align-left","tablet-align-left","mobile-align-left","first","instock","shipping-taxable","product-type-simple"],"_links":{"self":[{"href":"https:\/\/www.xkh-ceramics.com\/it\/wp-json\/wp\/v2\/product\/2100","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.xkh-ceramics.com\/it\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/www.xkh-ceramics.com\/it\/wp-json\/wp\/v2\/types\/product"}],"replies":[{"embeddable":true,"href":"https:\/\/www.xkh-ceramics.com\/it\/wp-json\/wp\/v2\/comments?post=2100"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.xkh-ceramics.com\/it\/wp-json\/wp\/v2\/media\/2104"}],"wp:attachment":[{"href":"https:\/\/www.xkh-ceramics.com\/it\/wp-json\/wp\/v2\/media?parent=2100"}],"wp:term":[{"taxonomy":"product_brand","embeddable":true,"href":"https:\/\/www.xkh-ceramics.com\/it\/wp-json\/wp\/v2\/product_brand?post=2100"},{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/www.xkh-ceramics.com\/it\/wp-json\/wp\/v2\/product_cat?post=2100"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/www.xkh-ceramics.com\/it\/wp-json\/wp\/v2\/product_tag?post=2100"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}