{"id":2357,"date":"2026-06-09T03:16:56","date_gmt":"2026-06-09T03:16:56","guid":{"rendered":"https:\/\/www.xkh-ceramics.com\/?post_type=product&p=2357"},"modified":"2026-06-09T03:26:48","modified_gmt":"2026-06-09T03:26:48","slug":"device-grade-hexagonal-boron-nitride","status":"publish","type":"product","link":"https:\/\/www.xkh-ceramics.com\/hu\/product\/device-grade-hexagonal-boron-nitride\/","title":{"rendered":"K\u00e9sz\u00fcl\u00e9kmin\u0151s\u00e9g\u0171 hexagon\u00e1lis b\u00f3r-nitrid (hBN) egykrist\u00e1ly a fejlett 2D-elektronika \u00e9s a kvantumanyagok sz\u00e1m\u00e1ra"},"content":{"rendered":"

Az eszk\u00f6zmin\u0151s\u00e9g\u0171 hexagon\u00e1lis b\u00f3r-nitrid (hBN) egykrist\u00e1ly egy rendk\u00edv\u00fcl kiv\u00e1l\u00f3 min\u0151s\u00e9g\u0171, r\u00e9teges krist\u00e1lyanyag, amelyet a k\u00f6vetkez\u0151 gener\u00e1ci\u00f3s elektronikai, fotonikai \u00e9s kvantumtechnol\u00f3gi\u00e1khoz fejlesztettek ki. Ezeket a millim\u00e9teres m\u00e9ret\u0171 egykrist\u00e1lyokat egy szabadalmaztatott, atmoszf\u00e9rikus nyom\u00e1s\u00fa krist\u00e1lyn\u00f6veszt\u00e9si elj\u00e1r\u00e1ssal \u00e1ll\u00edtj\u00e1k el\u0151; kiv\u00e9teles szerkezeti integrit\u00e1ssal, alacsony hibas\u0171r\u0171s\u00e9ggel, valamint kiemelked\u0151 dielektromos \u00e9s optikai tulajdons\u00e1gokkal rendelkeznek.<\/p>\n

A van der Waals-anyagok egyik legfontosabb k\u00e9pvisel\u0151jek\u00e9nt a hBN ide\u00e1lis hordoz\u00f3- \u00e9s beburkol\u00f3 r\u00e9tegk\u00e9nt szolg\u00e1l a graf\u00e9n \u00e9s m\u00e1s k\u00e9tdimenzi\u00f3s anyagok sz\u00e1m\u00e1ra. Atomszint\u0171en s\u00edk fel\u00fclete, k\u00e9miai tehetetlens\u00e9ge \u00e9s sz\u00e9les s\u00e1vr\u00e9s\u00e9nek k\u00f6sz\u00f6nhet\u0151en n\u00e9lk\u00fcl\u00f6zhetetlen szerepet j\u00e1tszik a nagy teljes\u00edtm\u00e9ny\u0171 elektronikus eszk\u00f6z\u00f6k \u00e9s a fejlett kutat\u00e1si platformok gy\u00e1rt\u00e1s\u00e1ban.<\/p>\n

F\u00fcggetlen kutat\u00e1sok kimutatt\u00e1k, hogy az ezeken a krist\u00e1lyokon el\u0151\u00e1ll\u00edtott graf\u00e9n-eszk\u00f6z\u00f6k hordoz\u00f3mobilit\u00e1sa \u00f6sszehasonl\u00edthat\u00f3, vagy ak\u00e1r meg is haladja a nemzetk\u00f6zileg elismert hBN-referenciaanyagokn\u00e1l el\u00e9rt \u00e9rt\u00e9keket.<\/p>\n

\"K\u00e9sz\u00fcl\u00e9kmin\u0151s\u00e9g\u0171 \"K\u00e9sz\u00fcl\u00e9kmin\u0151s\u00e9g\u0171 \"K\u00e9sz\u00fcl\u00e9kmin\u0151s\u00e9g\u0171<\/p>\n

\n
\n<\/div>\n

A term\u00e9k jellemz\u0151i<\/h2>\n

Rendk\u00edv\u00fcl kiv\u00e1l\u00f3 krist\u00e1lymin\u0151s\u00e9g<\/h3>\n

Az anyag keskeny Raman-vonalvastags\u00e1gokkal \u00e9s nagy, egydom\u00e9nes r\u00e9gi\u00f3kkal rendelkezik, ami kiv\u00e1l\u00f3 krist\u00e1lyt\u00f6k\u00e9letess\u00e9gre \u00e9s minim\u00e1lis szerkezeti hib\u00e1kra utal.<\/p>\n

Ide\u00e1lis hordoz\u00f3anyag a 2D-anyagokhoz<\/h3>\n

Az hBN atomszinten sima \u00e9s szennyez\u0151d\u00e9smentes fel\u00fcletet biztos\u00edt, ami cs\u00f6kkenti a t\u00f6lt\u00e9ssz\u00f3r\u00e1st \u00e9s jav\u00edtja az elektron\u00e1raml\u00e1st a graf\u00e9nben \u00e9s m\u00e1s r\u00e9teges anyagokban.<\/p>\n

Kiv\u00e1l\u00f3 elektromos szigetel\u00e9s<\/h3>\n

Mivel a dielektromos \u00e1tt\u00f6r\u00e9si mez\u0151je megk\u00f6zel\u00edti az 1,64 V\/nm \u00e9rt\u00e9ket, a hBN-t sz\u00e9les k\u00f6rben haszn\u00e1lj\u00e1k nagy teljes\u00edtm\u00e9ny\u0171 szigetel\u0151r\u00e9tegk\u00e9nt a nanoelektronikai eszk\u00f6z\u00f6kben.<\/p>\n

A m\u00e9ly ultraibolya tartom\u00e1ny optikai tulajdons\u00e1gai<\/h3>\n

A krist\u00e1ly 215 nm k\u00f6r\u00fcli saj\u00e1t s\u00e1vhat\u00e1r-emisszi\u00f3t mutat, ami vonz\u00f3v\u00e1 teszi a m\u00e9ly-UV-fotonika \u00e9s az optoelektronikai kutat\u00e1sok sz\u00e1m\u00e1ra.<\/p>\n

Nagy fel\u00fclet\u0171 egykrist\u00e1lyos tartom\u00e1nyok<\/h3>\n

A tipikus krist\u00e1lyok oldalir\u00e1ny\u00fa m\u00e9rete meghaladja az 1 mm-t, \u00e9s nagy, haszn\u00e1lhat\u00f3 fel\u00fcletekkel rendelkeznek, amelyek alkalmasak a r\u00e9teges lev\u00e1laszt\u00e1sra \u00e9s eszk\u00f6z\u00f6k gy\u00e1rt\u00e1s\u00e1ra.<\/p>\n

\"K\u00e9sz\u00fcl\u00e9kmin\u0151s\u00e9g\u0171<\/p>\n

\n
\n<\/div>\n

M\u0171szaki specifik\u00e1ci\u00f3k<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n
T\u00e9tel<\/th>\nSpecifik\u00e1ci\u00f3<\/th>\n<\/tr>\n
Anyag<\/td>\nHatsz\u00f6glet\u0171 b\u00f3r-nitrid (hBN)<\/td>\n<\/tr>\n
Krist\u00e1lyszerkezet<\/td>\nEgykrist\u00e1ly<\/td>\n<\/tr>\n
Oszt\u00e1ly<\/td>\nK\u00e9sz\u00fcl\u00e9kmin\u0151s\u00e9g<\/td>\n<\/tr>\n
N\u00f6veked\u00e9si m\u00f3dszer<\/td>\nSaj\u00e1t fejleszt\u00e9s\u0171, l\u00e9gk\u00f6ri nyom\u00e1son t\u00f6rt\u00e9n\u0151 n\u00f6veked\u00e9s<\/td>\n<\/tr>\n
Krist\u00e1lyszerkezet<\/td>\nKrist\u00e1ly \u00f6mlesztve<\/td>\n<\/tr>\n
Jellemz\u0151 oldalir\u00e1ny\u00fa m\u00e9ret<\/td>\n\u2265 1 mm<\/td>\n<\/tr>\n
Fel\u00fcleti \u00e1llapot<\/td>\nA term\u00e9szetes n\u00f6veked\u00e9s szempontjai<\/td>\n<\/tr>\n
Csomagol\u00e1s<\/td>\nChip-hordoz\u00f3<\/td>\n<\/tr>\n
Mennyis\u00e9g<\/td>\nCsomagonk\u00e9nt 5\u201310 krist\u00e1ly<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

Elektromos tulajdons\u00e1gok<\/h3>\n\n\n\n\n
Param\u00e9ter<\/td>\nTipikus \u00e9rt\u00e9k<\/td>\n<\/tr>\n
Dielektromos \u00e1tt\u00f6r\u00e9si szil\u00e1rds\u00e1g<\/td>\n1,64 \u00b1 0,06 V\/nm<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

Optikai tulajdons\u00e1gok<\/h3>\n\n\n\n\n\n\n
Param\u00e9ter<\/td>\nTipikus \u00e9rt\u00e9k<\/td>\n<\/tr>\n
UV-s\u00e1vhat\u00e1r-emisszi\u00f3<\/td>\n~215 nm<\/td>\n<\/tr>\n
Lumineszcencia-teljes\u00edtm\u00e9ny<\/td>\nA legkorszer\u0171bb<\/td>\n<\/tr>\n
Optikai \u00e1tl\u00e1tsz\u00f3s\u00e1g<\/td>\nMagas<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

Raman-jellemz\u0151k<\/h3>\n\n\n\n\n
Param\u00e9ter<\/td>\nTipikus \u00e9rt\u00e9k<\/td>\n<\/tr>\n
E\u2082g Raman FWHM<\/td>\n7,88 cm\u207b\u00b9<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

Referenciaeszk\u00f6z teljes\u00edtm\u00e9nye<\/h3>\n\n\n\n\n\n
Param\u00e9ter<\/td>\nTipikus \u00e9rt\u00e9k<\/td>\n<\/tr>\n
A graf\u00e9n mobilit\u00e1sa (300 K)<\/td>\n~80 000 cm\u00b2\/V\u00b7s<\/td>\n<\/tr>\n
Hordoz\u00f3i s\u0171r\u0171s\u00e9g<\/td>\n1 \u00d7 10\u00b9\u00b2 cm\u207b\u00b2<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

\"K\u00e9sz\u00fcl\u00e9kmin\u0151s\u00e9g\u0171<\/p>\n

\n
\n<\/div>\n

Alkalmaz\u00e1sok<\/h2>\n

Graf\u00e9n-eszk\u00f6z\u00f6k gy\u00e1rt\u00e1sa<\/h3>\n

A hBN a nagy mobilit\u00e1s\u00fa graf\u00e9n tranzisztorok, Hall-eszk\u00f6z\u00f6k, \u00e9rz\u00e9kel\u0151k \u00e9s kvantumtranszport-szerkezetek eset\u00e9ben az els\u0151dleges szubsztr\u00e1tum \u00e9s be\u00e1gyaz\u00f3 anyag.<\/p>\n

Van der Waals-heterostrukt\u00far\u00e1k<\/h3>\n

A krist\u00e1lyt sz\u00e9les k\u00f6rben haszn\u00e1lj\u00e1k a graf\u00e9n, MoS\u2082, WS\u2082, WSe\u2082 \u00e9s egy\u00e9b k\u00e9tdimenzi\u00f3s anyagokat tartalmaz\u00f3 r\u00e9teges heterostrukt\u00far\u00e1k \u00f6ssze\u00e1ll\u00edt\u00e1s\u00e1hoz.<\/p>\n

Kvantumelektronika<\/h3>\n

A kutat\u00f3k eszk\u00f6zmin\u0151s\u00e9g\u0171 hBN-t haszn\u00e1lnak a korrel\u00e1lt elektronrendszerek, a szupravezet\u00e9s, a moar\u00e9-anyagok \u00e9s a kvantuminform\u00e1ci\u00f3s technol\u00f3gi\u00e1k kutat\u00e1s\u00e1ban.<\/p>\n

Nanofotonika<\/h3>\n

A fonon-polaritonok t\u00e1mogat\u00e1s\u00e1ra val\u00f3 k\u00e9pess\u00e9ge miatt a hBN vonz\u00f3 anyag a nanoszint\u0171 optikai bez\u00e1r\u00e1s \u00e9s a fotonikus eszk\u00f6z\u00f6k fejleszt\u00e9se szempontj\u00e1b\u00f3l.<\/p>\n

M\u00e9ly-UV optoelektronika<\/h3>\n

A hBN saj\u00e1t ultraibolya-sug\u00e1rz\u00e1si tulajdons\u00e1gai lehet\u0151v\u00e9 teszik az alkalmaz\u00e1s\u00e1t UV-f\u00e9nyforr\u00e1sokban, detektorokban \u00e9s fejlett optikai rendszerekben.<\/p>\n

\n
\n<\/div>\n

El\u0151ny\u00f6k a hagyom\u00e1nyos hBN-anyagokkal szemben<\/h2>\n

A polikrist\u00e1lyos b\u00f3r-nitridhez \u00e9s az alacsonyabb min\u0151s\u00e9g\u0171 krist\u00e1lyokhoz k\u00e9pest az eszk\u00f6zmin\u0151s\u00e9g\u0171 hBN a k\u00f6vetkez\u0151 el\u0151ny\u00f6ket k\u00edn\u00e1lja:<\/p>\n

    \n
  • Nagyobb egykrist\u00e1lyos ter\u00fcletek<\/li>\n
  • Alacsonyabb szennyez\u0151anyag-koncentr\u00e1ci\u00f3<\/li>\n
  • Cs\u00f6kkentett hibat\u00f6meg<\/li>\n
  • Magasabb dielektromos szil\u00e1rds\u00e1g<\/li>\n
  • A graf\u00e9n hordoz\u00f3 mobilit\u00e1s\u00e1nak jav\u00edt\u00e1sa<\/li>\n
  • Kiv\u00e1l\u00f3 optikai teljes\u00edtm\u00e9ny<\/li>\n
  • Jobb reproduk\u00e1lhat\u00f3s\u00e1g kutat\u00e1si alkalmaz\u00e1sokhoz<\/li>\n<\/ul>\n

    Ezek az el\u0151ny\u00f6k miatt az eszk\u00f6zmin\u0151s\u00e9g\u0171 hBN kulcsfontoss\u00e1g\u00fa anyag a legkorszer\u0171bb f\u00e9lvezet\u0151- \u00e9s kvantumtechnol\u00f3giai kutat\u00e1sok sz\u00e1m\u00e1ra.<\/p>\n

    \n
    \n<\/div>\n

    Lehets\u00e9ges testreszab\u00e1si lehet\u0151s\u00e9gek<\/h2>\n

    Az \u00fcgyfelek ig\u00e9nyeinek megfelel\u0151en egyedi megold\u00e1sok is rendelkez\u00e9sre \u00e1llnak, t\u00f6bbek k\u00f6z\u00f6tt:<\/p>\n

      \n
    • A krist\u00e1lym\u00e9ret kiv\u00e1laszt\u00e1sa<\/li>\n
    • Kutat\u00e1si szint\u0171 krist\u00e1lyszelekci\u00f3<\/li>\n
    • Nagy fel\u00fclet\u0171 krist\u00e1lyok sz\u00e1ll\u00edt\u00e1sa<\/li>\n
    • Speci\u00e1lis csomagol\u00e1si lehet\u0151s\u00e9gek<\/li>\n
    • Anyagjellemz\u00e9shez ny\u00fajtott t\u00e1mogat\u00e1s<\/li>\n<\/ul>\n
      \n
      \n<\/div>\n

      GYIK<\/h2>\n

      Miben k\u00fcl\u00f6nb\u00f6zik az eszk\u00f6zmin\u0151s\u00e9g\u0171 hBN a hagyom\u00e1nyos b\u00f3r-nitridt\u0151l?<\/h3>\n

      Az eszk\u00f6zmin\u0151s\u00e9g\u0171 hBN egy kiv\u00e1l\u00f3 min\u0151s\u00e9g\u0171 egykrist\u00e1ly, amelyet kifejezetten az elektronikus \u00e9s fotonikus eszk\u00f6z\u00f6k gy\u00e1rt\u00e1s\u00e1hoz optimaliz\u00e1ltak, \u00e9s amely jelent\u0151sen alacsonyabb hibas\u0171r\u0171s\u00e9ggel, valamint kiemelked\u0151 elektromos teljes\u00edtm\u00e9nnyel rendelkezik.<\/p>\n

      Mi\u00e9rt haszn\u00e1lj\u00e1k az hBN-t gyakran a graf\u00e9nnel egy\u00fctt?<\/h3>\n

      Atomszinten s\u00edk \u00e9s elektromosan szigetel\u0151 fel\u00fclete minim\u00e1lisra cs\u00f6kkenti a t\u00f6lt\u00e9ssz\u00f3r\u00f3d\u00e1st, \u00e9s lehet\u0151v\u00e9 teszi a graf\u00e9n sz\u00e1m\u00e1ra, hogy kiv\u00e9telesen magas hordoz\u00f3mobilit\u00e1st \u00e9rjen el.<\/p>\n

      Haszn\u00e1lhat\u00f3-e az hBN a kvantumk\u00e9sz\u00fcl\u00e9kek kutat\u00e1s\u00e1ban?<\/h3>\n

      Igen. Az hBN az egyik legsz\u00e9lesebb k\u00f6rben haszn\u00e1lt anyag a kvantumtranszport-kutat\u00e1sok, a van der Waals-heterostrukt\u00far\u00e1k \u00e9s a kialakul\u00f3ban l\u00e9v\u0151 kvantumtechnol\u00f3gi\u00e1k ter\u00fclet\u00e9n.<\/p>\n

      Alkalmas ez az anyag h\u00e1mlaszt\u00e1sra?<\/h3>\n

      Igen. A r\u00e9teges krist\u00e1lyszerkezet lehet\u0151v\u00e9 teszi a kiv\u00e1l\u00f3 min\u0151s\u00e9g\u0171 krist\u00e1lypelyhek mechanikus lev\u00e1laszt\u00e1s\u00e1t, amelyek eszk\u00f6zgy\u00e1rt\u00e1shoz \u00e9s tudom\u00e1nyos kutat\u00e1shoz haszn\u00e1lhat\u00f3k.<\/p>\n

      Mely ipar\u00e1gakban haszn\u00e1lnak eszk\u00f6zmin\u0151s\u00e9g\u0171 hBN-t?<\/h3>\n

      Az anyagot els\u0151sorban a f\u00e9lvezet\u0151-kutat\u00e1sban, a kvantumsz\u00e1m\u00edt\u00e1stechnik\u00e1ban, a nanofotonik\u00e1ban, a fejlett anyagtudom\u00e1nyban, valamint vil\u00e1gszerte egyetemi kutat\u00f3laborat\u00f3riumokban haszn\u00e1lj\u00e1k.<\/p>","protected":false},"excerpt":{"rendered":"

      Az eszk\u00f6zmin\u0151s\u00e9g\u0171 hexagon\u00e1lis b\u00f3r-nitrid (hBN) egykrist\u00e1ly egy rendk\u00edv\u00fcl kiv\u00e1l\u00f3 min\u0151s\u00e9g\u0171, r\u00e9teges krist\u00e1lyanyag, amelyet a k\u00f6vetkez\u0151 gener\u00e1ci\u00f3s elektronikai, fotonikai \u00e9s kvantumtechnol\u00f3gi\u00e1khoz fejlesztettek ki. Ezeket a millim\u00e9teres m\u00e9ret\u0171 egykrist\u00e1lyokat egy szabadalmaztatott, atmoszf\u00e9rikus nyom\u00e1s\u00fa krist\u00e1lyn\u00f6veszt\u00e9si elj\u00e1r\u00e1ssal \u00e1ll\u00edtj\u00e1k el\u0151; kiv\u00e9teles szerkezeti integrit\u00e1ssal, alacsony hibas\u0171r\u0171s\u00e9ggel, valamint kiemelked\u0151 dielektromos \u00e9s optikai tulajdons\u00e1gokkal rendelkeznek.<\/p>","protected":false},"featured_media":2369,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center 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