{"id":2322,"date":"2026-05-29T02:28:31","date_gmt":"2026-05-29T02:28:31","guid":{"rendered":"https:\/\/www.xkh-ceramics.com\/?post_type=product&p=2322"},"modified":"2026-05-29T02:44:45","modified_gmt":"2026-05-29T02:44:45","slug":"silicon-carbide-cantilever-paddle-for-semiconductor-photovoltaic-high-temperature-furnace-systems","status":"publish","type":"product","link":"https:\/\/www.xkh-ceramics.com\/hu\/product\/silicon-carbide-cantilever-paddle-for-semiconductor-photovoltaic-high-temperature-furnace-systems\/","title":{"rendered":"Szil\u00edcium-karbid konzolos lap\u00e1t f\u00e9lvezet\u0151 \u00e9s fotovoltaikus magas h\u0151m\u00e9rs\u00e9klet\u0171 kemence rendszerekhez"},"content":{"rendered":"

\"\"A szil\u00edcium-karbid konzolos lap\u00e1t (SiC konzolos lap\u00e1t) egy nagy teljes\u00edtm\u00e9ny\u0171 szerkezeti elem, amelyet reakci\u00f3k\u00f6t\u00e9s\u0171 szil\u00edcium-karbidb\u00f3l (RB-SiC) gy\u00e1rtanak. Kifejezetten magas h\u0151m\u00e9rs\u00e9klet\u0171 f\u00e9lvezet\u0151- \u00e9s fotovoltaikus feldolgoz\u00f3 berendez\u00e9sekhez tervezt\u00e9k, \u00e9s kiv\u00e1l\u00f3 h\u0151stabilit\u00e1st, mechanikai szil\u00e1rds\u00e1got, korr\u00f3zi\u00f3\u00e1ll\u00f3s\u00e1got \u00e9s m\u00e9retpontoss\u00e1got biztos\u00edt sz\u00e9ls\u0151s\u00e9ges \u00fczemi k\u00f6r\u00fclm\u00e9nyek k\u00f6z\u00f6tt.<\/p>\n

A lap\u00e1t konzolos szerkezet\u00e9nek k\u00f6sz\u00f6nhet\u0151en a lap\u00e1t t\u00f6bb osty\u00e1t is k\u00e9pes biztons\u00e1gosan megt\u00e1masztani \u00e9s sz\u00e1ll\u00edtani a diff\u00fazi\u00f3s kemenc\u00e9kben, oxid\u00e1ci\u00f3s kemenc\u00e9kben, LPCVD-rendszerekben \u00e9s bevon\u00f3 berendez\u00e9sekben. A hagyom\u00e1nyos kvarc vagy f\u00e9m hordoz\u00f3rendszerekkel \u00f6sszehasonl\u00edtva a SiC konzolos lap\u00e1tok jelent\u0151sen hosszabb \u00e9lettartamot, alacsonyabb szennyez\u0151d\u00e9si kock\u00e1zatot \u00e9s kiv\u00e1l\u00f3 h\u0151deform\u00e1ci\u00f3val szembeni ellen\u00e1ll\u00e1st biztos\u00edtanak.<\/p>\n

Alacsony h\u0151t\u00e1gul\u00e1si egy\u00fctthat\u00f3j\u00e1nak \u00e9s magas h\u0151vezet\u0151 k\u00e9pess\u00e9g\u00e9nek k\u00f6sz\u00f6nhet\u0151en a lap\u00e1t az ism\u00e9telt f\u0171t\u00e9si \u00e9s h\u0171t\u00e9si ciklusok sor\u00e1n is kiv\u00e1l\u00f3 szerkezeti integrit\u00e1st biztos\u00edt, \u00edgy ide\u00e1lis a folyamatos, magas h\u0151m\u00e9rs\u00e9klet\u0171 ipari termel\u00e9si k\u00f6rnyezetekben.<\/p>\n

\n
\n<\/div>\n

A SiC Cantilever lap\u00e1t f\u0151 jellemz\u0151i<\/h2>\n

Kiv\u00e1l\u00f3 magas h\u0151m\u00e9rs\u00e9kleti ellen\u00e1ll\u00e1s<\/h3>\n

A SiC konzolos lap\u00e1t ak\u00e1r 1380 \u00b0C-os h\u0151m\u00e9rs\u00e9kleten is k\u00e9pes folyamatosan m\u0171k\u00f6dni deform\u00e1ci\u00f3 vagy szerkezeti meghib\u00e1sod\u00e1s n\u00e9lk\u00fcl. Ez\u00e1ltal kiv\u00e1l\u00f3an alkalmas 1000-1300 \u00b0C k\u00f6z\u00f6tt m\u0171k\u00f6d\u0151 f\u00e9lvezet\u0151-diff\u00fazi\u00f3s, oxid\u00e1ci\u00f3s, nitrid\u00e1l\u00e1si, l\u00e1gy\u00edt\u00e1si \u00e9s LPCVD-folyamatokhoz.<\/p>\n

Kiv\u00e1l\u00f3 mechanikai szil\u00e1rds\u00e1g<\/h3>\n

Az RB-SiC anyag kiv\u00e9teles hajl\u00edt\u00f3szil\u00e1rds\u00e1got \u00e9s merevs\u00e9get biztos\u00edt m\u00e9g magas h\u0151m\u00e9rs\u00e9kleten is. A stabil keresztmetszeti kialak\u00edt\u00e1s megb\u00edzhat\u00f3 al\u00e1t\u00e1maszt\u00e1st biztos\u00edt a nagy \u00e1tm\u00e9r\u0151j\u0171 osty\u00e1k sz\u00e1m\u00e1ra, mik\u00f6zben minim\u00e1lisra cs\u00f6kkenti a kemence m\u0171k\u00f6d\u00e9se sor\u00e1n fell\u00e9p\u0151 rezg\u00e9seket \u00e9s megereszked\u00e9st.<\/p>\n

Ultra-alacsony szennyezetts\u00e9g<\/h3>\n

A f\u00e9mhordoz\u00f3kt\u00f3l elt\u00e9r\u0151en a szil\u00edciumkarbid nem bocs\u00e1t ki f\u00e9mionokat vagy r\u00e9szecsk\u00e9ket a magas h\u0151m\u00e9rs\u00e9klet\u0171 feldolgoz\u00e1s sor\u00e1n. Ez seg\u00edt meg\u0151rizni az osty\u00e1k tisztas\u00e1g\u00e1t \u00e9s jav\u00edtja a f\u00e9lvezet\u0151gy\u00e1rt\u00e1s hozam\u00e1t.<\/p>\n

Kiv\u00e1l\u00f3 termikus \u00fct\u00e9s\u00e1ll\u00f3s\u00e1g<\/h3>\n

A lap\u00e1t reped\u00e9s vagy vetemed\u00e9s n\u00e9lk\u00fcl ellen\u00e1ll a gyors f\u0171t\u00e9si \u00e9s h\u0171t\u00e9si ciklusoknak. Magas h\u0151sokk\u00e1ll\u00f3s\u00e1ga nagym\u00e9rt\u00e9kben meghosszabb\u00edtja a m\u0171k\u00f6d\u00e9si \u00e9lettartamot \u00e9s cs\u00f6kkenti a karbantart\u00e1s gyakoris\u00e1g\u00e1t.<\/p>\n

Kiv\u00e1l\u00f3 korr\u00f3zi\u00f3\u00e1ll\u00f3s\u00e1g<\/h3>\n

A SiC anyag kiv\u00e1l\u00f3an ellen\u00e1ll a savaknak, l\u00fagoknak, oxid\u00e1ci\u00f3nak \u00e9s a mar\u00f3 technol\u00f3giai g\u00e1zoknak, \u00edgy alkalmas a kem\u00e9ny vegyipari feldolgoz\u00e1si k\u00f6rnyezetekben.<\/p>\n

LPCVD folyamat kompatibilit\u00e1s<\/h3>\n

A szil\u00edcium-karbid h\u0151t\u00e1gul\u00e1si egy\u00fctthat\u00f3ja szorosan illeszkedik a szok\u00e1sos LPCVD bevonatanyagokhoz, hat\u00e9konyan cs\u00f6kkentve a h\u0151fesz\u00fclts\u00e9get, a bevonat lev\u00e1l\u00e1s\u00e1t \u00e9s a r\u00e9szecskeszennyez\u0151d\u00e9st.<\/p>\n

Hossz\u00fa \u00e9lettartam<\/h3>\n

A kvarc- \u00e9s f\u00e9mlap\u00e1tokkal \u00f6sszehasonl\u00edtva a SiC konzolos lap\u00e1tok jelent\u0151sen jobb tart\u00f3ss\u00e1got \u00e9s cs\u00f6kkentett cserehat\u00e1rid\u0151t k\u00edn\u00e1lnak, ami cs\u00f6kkenti a hossz\u00fa t\u00e1v\u00fa \u00fczemeltet\u00e9si k\u00f6lts\u00e9geket.<\/p>\n

\n
\n<\/div>\n

M\u0171szaki specifik\u00e1ci\u00f3k<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n
T\u00e9tel<\/th>\nEgys\u00e9g<\/th>\nAdatok<\/th>\n<\/tr>\n
Maxim\u00e1lis \u00fczemi h\u0151m\u00e9rs\u00e9klet<\/td>\n\u2103<\/td>\n1380<\/td>\n<\/tr>\n
S\u0171r\u0171s\u00e9g<\/td>\ng\/cm\u00b3<\/td>\n3.04\u20133.08<\/td>\n<\/tr>\n
Nyitott porozit\u00e1s<\/td>\n%<\/td>\n<0.1<\/td>\n<\/tr>\n
Hajl\u00edt\u00f3szil\u00e1rds\u00e1g<\/td>\nMPa<\/td>\n250 (20\u2103) \/ 280 (1200\u2103)<\/td>\n<\/tr>\n
Rugalmass\u00e1gi modulus<\/td>\nGPa<\/td>\n330 (20\u2103) \/ 300 (1200\u2103)<\/td>\n<\/tr>\n
H\u0151vezet\u0151 k\u00e9pess\u00e9g<\/td>\nW\/m-K<\/td>\n45 (1200\u2103)<\/td>\n<\/tr>\n
H\u0151t\u00e1gul\u00e1si egy\u00fctthat\u00f3<\/td>\nK-\u00b9\u00d710-\u2076<\/td>\n4.5<\/td>\n<\/tr>\n
Kem\u00e9nys\u00e9g (Vickers)<\/td>\nHV2<\/td>\n\u22652100<\/td>\n<\/tr>\n
Savas\/l\u00fagos ellen\u00e1ll\u00e1s<\/td>\n\u2014<\/td>\nKiv\u00e1l\u00f3<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n
\n
\n<\/div>\n

Szabv\u00e1nyos m\u00e9retek<\/h2>\n

A rendelkez\u00e9sre \u00e1ll\u00f3 standard hossz\u00fas\u00e1gok a k\u00f6vetkez\u0151k:<\/p>\n

    \n
  • 2378 mm<\/li>\n
  • 2550 mm<\/li>\n
  • 2660 mm<\/li>\n<\/ul>\n

    Egyedi m\u00e9retek, r\u00e9sszerkezetek, ostyakapacit\u00e1sok \u00e9s r\u00f6gz\u00edt\u00e9si konfigur\u00e1ci\u00f3k \u00e1llnak rendelkez\u00e9sre az \u00fcgyf\u00e9l kemencekialak\u00edt\u00e1sai \u00e9s technol\u00f3giai k\u00f6vetelm\u00e9nyei szerint.<\/p>\n

    \n
    \n<\/div>\n

    Tipikus alkalmaz\u00e1sok<\/h2>\n

    \"\"F\u00e9lvezet\u0151 ipar<\/h3>\n

    A SiC konzolos lap\u00e1tokat sz\u00e9les k\u00f6rben haszn\u00e1lj\u00e1k a f\u00e9lvezet\u0151gy\u00e1rt\u00e1si folyamatokban, t\u00f6bbek k\u00f6z\u00f6tt:<\/p>\n

      \n
    • Wafer diff\u00fazi\u00f3<\/li>\n
    • Oxid\u00e1ci\u00f3<\/li>\n
    • LPCVD lev\u00e1laszt\u00e1s<\/li>\n
    • Nitrid\u00e1l\u00e1s<\/li>\n
    • L\u00e1gy\u00edt\u00e1s<\/li>\n
    • Wafer sz\u00e1ll\u00edt\u00e1s \u00e9s rakod\u00e1s<\/li>\n<\/ul>\n

      Nagy tisztas\u00e1guk \u00e9s m\u00e9retstabilit\u00e1suk seg\u00edt cs\u00f6kkenteni a szennyez\u0151d\u00e9si kock\u00e1zatokat \u00e9s jav\u00edtani a folyamatok konzisztenci\u00e1j\u00e1t.<\/p>\n

      \"\"Fotovoltaikus ipar<\/h3>\n

      A napelemgy\u00e1rt\u00e1sban a lap\u00e1t magas h\u0151m\u00e9rs\u00e9klet\u0171 ostyahordoz\u00f3k\u00e9nt szolg\u00e1l:<\/p>\n

        \n
      • Polikrist\u00e1lyos szil\u00edciumszeletek<\/li>\n
      • Monokrist\u00e1lyos szil\u00edciumszeletek<\/li>\n
      • Diff\u00fazi\u00f3s kemenc\u00e9k<\/li>\n
      • PECVD \u00e9s bevon\u00f3rendszerek<\/li>\n<\/ul>\n

        Az anyag meg\u0151rzi stabilit\u00e1s\u00e1t a fotovoltaikus gy\u00e1rt\u00f3sorokon gyakran el\u0151fordul\u00f3 ism\u00e9telt h\u0151ciklusos k\u00f6r\u00fclm\u00e9nyek k\u00f6z\u00f6tt.<\/p>\n

        Vegyipari \u00e9s ipari alkalmaz\u00e1sok<\/h3>\n

        Kiv\u00e1l\u00f3 korr\u00f3zi\u00f3\u00e1ll\u00f3s\u00e1ga miatt a SiC konzolos lap\u00e1t a k\u00f6vetkez\u0151kben is haszn\u00e1lhat\u00f3:<\/p>\n

          \n
        • Korroz\u00edv k\u00e9miai reaktorok<\/li>\n
        • Magas h\u0151m\u00e9rs\u00e9klet\u0171 keringtet\u0151 rendszerek<\/li>\n
        • Ipari h\u0151kezel\u0151 berendez\u00e9sek<\/li>\n
        • Agressz\u00edv g\u00e1zk\u00f6rnyezetek<\/li>\n<\/ul>\n
          \n
          \n<\/div>\n

          El\u0151ny\u00f6k a f\u00e9m vagy kvarc lap\u00e1tokkal szemben<\/h2>\n\n\n\n\n\n\n\n\n\n\n
          Ingatlan<\/td>\nSiC lap\u00e1t<\/td>\nKvarc lap\u00e1t<\/td>\nF\u00e9m lap\u00e1t<\/td>\n<\/tr>\n
          Magas h\u0151m\u00e9rs\u00e9klet\u0171 ellen\u00e1ll\u00e1s<\/td>\nKiv\u00e1l\u00f3<\/td>\nM\u00e9rs\u00e9kelt<\/td>\nM\u00e9rs\u00e9kelt<\/td>\n<\/tr>\n
          H\u0151sokk-ellen\u00e1ll\u00e1s<\/td>\nKiv\u00e1l\u00f3<\/td>\nSzeg\u00e9ny<\/td>\nM\u00e9rs\u00e9kelt<\/td>\n<\/tr>\n
          Korr\u00f3zi\u00f3\u00e1ll\u00f3s\u00e1g<\/td>\nKiv\u00e1l\u00f3<\/td>\nJ\u00f3<\/td>\nSzeg\u00e9ny<\/td>\n<\/tr>\n
          Mechanikai szil\u00e1rds\u00e1g<\/td>\nNagyon magas<\/td>\nAlacsony<\/td>\nMagas<\/td>\n<\/tr>\n
          R\u00e9szecskeszennyez\u00e9s<\/td>\nNagyon alacsony<\/td>\nM\u00e9rs\u00e9kelt<\/td>\nMagas<\/td>\n<\/tr>\n
          \u00c9lettartam<\/td>\nHossz\u00fa<\/td>\nR\u00f6vid<\/td>\nM\u00e9rs\u00e9kelt<\/td>\n<\/tr>\n
          Nagym\u00e9ret\u0171 ostyatart\u00f3<\/td>\nKiv\u00e1l\u00f3<\/td>\nKorl\u00e1tozott<\/td>\nM\u00e9rs\u00e9kelt<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n
          \n
          \n<\/div>\n

          GYIK - Szil\u00edcium-karbid konzolos lap\u00e1t<\/h2>\n

          1. Mekkora a maxim\u00e1lis \u00fczemi h\u0151m\u00e9rs\u00e9klet?<\/h3>\n

          A maxim\u00e1lis \u00fczemi h\u0151m\u00e9rs\u00e9klet 1380 \u00b0C. Megb\u00edzhat\u00f3an m\u0171k\u00f6dik a magas h\u0151m\u00e9rs\u00e9klet\u0171 f\u00e9lvezet\u0151- \u00e9s fotovoltaikus folyamatokban 1000-1300 \u00b0C k\u00f6z\u00f6tt.<\/p>\n

          2. Mi\u00e9rt v\u00e1lassza a szil\u00edcium-karbidot a f\u00e9m lap\u00e1tok helyett?<\/h3>\n

          A f\u00e9m lap\u00e1tok magas h\u0151m\u00e9rs\u00e9kleten oxid\u00e1l\u00f3dhatnak, deform\u00e1l\u00f3dhatnak, vagy f\u00e9mes szennyez\u0151d\u00e9seket szabad\u00edthatnak fel. A szil\u00edciumkarbid kiv\u00e1l\u00f3 kem\u00e9nys\u00e9get, h\u0151stabilit\u00e1st, korr\u00f3zi\u00f3\u00e1ll\u00f3s\u00e1got \u00e9s rendk\u00edv\u00fcl alacsony szennyez\u0151d\u00e9si jellemz\u0151ket k\u00edn\u00e1l.<\/p>\n

          3. Alkalmas-e a lap\u00e1t nagym\u00e9ret\u0171, p\u00e9ld\u00e1ul 12 h\u00fcvelykes osty\u00e1khoz?<\/h3>\n

          Igen. A konzolos szerkezet \u00e9s a nagy mechanikai szil\u00e1rds\u00e1g lehet\u0151v\u00e9 teszi a nagy \u00e1tm\u00e9r\u0151j\u0171 osty\u00e1k stabil al\u00e1t\u00e1maszt\u00e1s\u00e1t a m\u00e9retpontoss\u00e1g fenntart\u00e1sa mellett.<\/p>\n

          4. Testre szabhat\u00f3?<\/h3>\n

          Igen. Egyedi m\u00e9retek, vastags\u00e1gok, ostyakapacit\u00e1sok, ny\u00edl\u00e1skialak\u00edt\u00e1sok \u00e9s r\u00f6gz\u00edt\u00e9si szerkezetek az \u00fcgyf\u00e9l ig\u00e9nyei alapj\u00e1n \u00e1llnak rendelkez\u00e9sre.<\/p>\n

           <\/p>","protected":false},"excerpt":{"rendered":"

          A szil\u00edcium-karbid konzolos lap\u00e1t egy fejlett, magas h\u0151m\u00e9rs\u00e9klet\u0171 hordoz\u00f3 megold\u00e1s f\u00e9lvezet\u0151, fotovoltaikus \u00e9s ipari kemenc\u00e9s alkalmaz\u00e1sokhoz. A kiv\u00e9teles h\u0151stabilit\u00e1s, a nagy mechanikai szil\u00e1rds\u00e1g, a korr\u00f3zi\u00f3\u00e1ll\u00f3s\u00e1g \u00e9s az ultraalacsony szennyezetts\u00e9gi jellemz\u0151k kombin\u00e1l\u00e1s\u00e1val megb\u00edzhat\u00f3 ostyakezel\u00e9si teljes\u00edtm\u00e9nyt ny\u00fajt ig\u00e9nyes feldolgoz\u00e1si k\u00f6rnyezetben.<\/p>\n

          A testreszabhat\u00f3 m\u00e9reteknek \u00e9s a modern diff\u00fazi\u00f3s \u00e9s LPCVD-rendszerekkel val\u00f3 kompatibilit\u00e1snak k\u00f6sz\u00f6nhet\u0151en a SiC konzolos lap\u00e1tok a k\u00f6vetkez\u0151 gener\u00e1ci\u00f3s magas h\u0151m\u00e9rs\u00e9klet\u0171 gy\u00e1rt\u00e1si folyamatok alapvet\u0151 alkot\u00f3elem\u00e9v\u00e9 v\u00e1lnak.<\/p>","protected":false},"featured_media":2323,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center 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