\n| Fel\u00fcleti stabilit\u00e1s<\/td>\n | Id\u0151vel lebomlik<\/td>\n | Rendk\u00edv\u00fcl stabil<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\nCsomagol\u00e1s \u00e9s kezel\u00e9s<\/span><\/h1>\n\n- Tisztaszobai csomagol\u00e1s el\u00e9rhet\u0151<\/li>\n
- \u00dct\u00e9s\u00e1ll\u00f3 fa l\u00e1da vagy v\u00e1kuumz\u00e1r\u00e1s<\/li>\n
- Szennyez\u0151d\u00e9smentes f\u00e9lvezet\u0151-sz\u00e1ll\u00edt\u00e1sra tervezve<\/li>\n
- Egyedi m\u00e9retek t\u00e1mogatottak (\u03a6380-\u03a6600 mm vagy testreszabott formatervez\u00e9s)<\/li>\n<\/ul>\n
\nMi\u00e9rt v\u00e1lassza ezt a term\u00e9ket<\/span><\/h1>\nEzt a SiC ostyatart\u00f3 t\u00e1lc\u00e1t a k\u00f6vetkez\u0151 gener\u00e1ci\u00f3s f\u00e9lvezet\u0151gy\u00e1rt\u00e1shoz tervezt\u00e9k, ahol a tisztas\u00e1g, a h\u0151stabilit\u00e1s \u00e9s a szennyez\u0151d\u00e9sek ellen\u0151rz\u00e9se kritikus fontoss\u00e1g\u00fa. A hagyom\u00e1nyos grafit alap\u00fa hordoz\u00f3k helyettes\u00edt\u00e9s\u00e9vel jelent\u0151sen jav\u00edtja a termel\u00e9si hozamot, cs\u00f6kkenti a karbantart\u00e1si k\u00f6lts\u00e9geket, \u00e9s hossz\u00fa t\u00e1von stabil folyamat teljes\u00edtm\u00e9nyt biztos\u00edt.<\/p>\n
\nGYIK<\/span><\/h1>\n1. k\u00e9rd\u00e9s: Mi a CVD SiC bevonat f\u0151 el\u0151nye a grafitt\u00e1lc\u00e1kkal szemben?<\/span><\/h3>\nA CVD SiC bevonat s\u0171r\u0171, ultra-tiszta v\u00e9d\u0151r\u00e9teget k\u00e9pez, amely megakad\u00e1lyozza a g\u00e1zok behatol\u00e1s\u00e1t \u00e9s a grafitszemcs\u00e9k lev\u00e1l\u00e1s\u00e1t, jelent\u0151sen jav\u00edtva a tart\u00f3ss\u00e1got \u00e9s cs\u00f6kkentve a szelet szennyez\u0151d\u00e9s\u00e9t.<\/p>\n
\n2. k\u00e9rd\u00e9s: Haszn\u00e1lhat\u00f3 ez a SiC t\u00e1lca magas h\u0151m\u00e9rs\u00e9klet\u0171 MOCVD folyamatokban?<\/span><\/h3>\nIgen. Kifejezetten MOCVD alkalmaz\u00e1sokhoz tervezt\u00e9k, \u00e9s 1100-1200 \u00b0C-on megb\u00edzhat\u00f3an m\u0171k\u00f6dik, kiv\u00e1l\u00f3 h\u0151stabilit\u00e1ssal \u00e9s egyenletes h\u0151eloszl\u00e1ssal.<\/p>\n
\n3. k\u00e9rd\u00e9s: Mi a k\u00fcl\u00f6nbs\u00e9g a bevont grafitt\u00e1lc\u00e1k \u00e9s a teljes CVD SiC t\u00e1lc\u00e1k k\u00f6z\u00f6tt?<\/span><\/h3>\nA bevont grafitt\u00e1lc\u00e1k grafitmagot haszn\u00e1lnak egy v\u00e9d\u0151 SiC-r\u00e9teggel, m\u00edg a teljes CVD SiC-t\u00e1lc\u00e1k monolitikus szerkezetek, amelyek nagyobb tisztas\u00e1g\u00faak, jobb korr\u00f3zi\u00f3\u00e1ll\u00f3s\u00e1g\u00faak \u00e9s hosszabb \u00e9lettartam\u00faak.<\/p>","protected":false},"excerpt":{"rendered":" The SiC ceramic tray plate is a high-performance wafer carrier designed for advanced semiconductor processes such as MOCVD, epitaxy, and ICP etching. It is available in two structures: Graphite substrate with CVD SiC coating Monolithic high-purity CVD SiC tray (\u226599.99%) Compared with conventional graphite carriers, this product offers significantly improved thermal stability, corrosion resistance, and 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|
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-3-300x300.png\")
A SiC ker\u00e1mia t\u00e1lc\u00e1s lemez egy nagy teljes\u00edtm\u00e9ny\u0171 ostyatart\u00f3, amelyet fejlett f\u00e9lvezet\u0151 elj\u00e1r\u00e1sokhoz, p\u00e9ld\u00e1ul MOCVD, epitaxia \u00e9s ICP marat\u00e1shoz terveztek. K\u00e9tf\u00e9le szerkezetben kaphat\u00f3:<\/p>\n![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-1-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-2-300x300.png\")
<\/p>\n