\n| Stabilit\u00e9 de la surface<\/td>\n | Se d\u00e9grade avec le temps<\/td>\n | Tr\u00e8s stable<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\nEmballage et manutention<\/span><\/h1>\n\n- Emballage pour salle blanche disponible<\/li>\n
- Caisse en bois r\u00e9sistante aux chocs ou emballage sous vide<\/li>\n
- Con\u00e7u pour le transport de semi-conducteurs sans contamination<\/li>\n
- Dimensions personnalis\u00e9es possibles (\u03a6380-\u03a6600 mm ou conceptions sur mesure)<\/li>\n<\/ul>\n
\nPourquoi choisir ce produit ?<\/span><\/h1>\nCe plateau porte-gaufrettes en SiC est con\u00e7u pour la fabrication de semi-conducteurs de la prochaine g\u00e9n\u00e9ration, o\u00f9 la puret\u00e9, la stabilit\u00e9 thermique et le contr\u00f4le de la contamination sont essentiels. En rempla\u00e7ant les supports traditionnels \u00e0 base de graphite, il am\u00e9liore consid\u00e9rablement le rendement de la production, r\u00e9duit les co\u00fbts de maintenance et garantit des performances stables \u00e0 long terme.<\/p>\n
\nFAQ<\/span><\/h1>\nQ1 : Quel est le principal avantage du rev\u00eatement CVD SiC par rapport aux plateaux en graphite ?<\/span><\/h3>\nLe rev\u00eatement CVD SiC constitue une couche protectrice dense et ultra-pure qui emp\u00eache la p\u00e9n\u00e9tration des gaz et le d\u00e9tachement des particules de graphite, ce qui am\u00e9liore consid\u00e9rablement la durabilit\u00e9 et r\u00e9duit la contamination des plaquettes.<\/p>\n
\nQ2 : Ce plateau SiC peut-il \u00eatre utilis\u00e9 dans les proc\u00e9d\u00e9s MOCVD \u00e0 haute temp\u00e9rature ?<\/span><\/h3>\nOui. Il est sp\u00e9cialement con\u00e7u pour les applications MOCVD et peut fonctionner de mani\u00e8re fiable \u00e0 1100-1200\u00b0C avec une excellente stabilit\u00e9 thermique et une distribution uniforme de la chaleur.<\/p>\n
\nQ3 : Quelle est la diff\u00e9rence entre les plateaux en graphite rev\u00eatus et les plateaux SiC enti\u00e8rement CVD ?<\/span><\/h3>\nLes plateaux en graphite rev\u00eatu utilisent un noyau en graphite recouvert d'une couche protectrice en SiC, tandis que les plateaux en SiC CVD sont des structures monolithiques d'une plus grande puret\u00e9, d'une meilleure r\u00e9sistance \u00e0 la corrosion et d'une dur\u00e9e de vie plus longue.<\/p>","protected":false},"excerpt":{"rendered":" The SiC ceramic tray plate is a high-performance wafer carrier designed for advanced semiconductor processes such as MOCVD, epitaxy, and ICP etching. It is available in two structures: Graphite substrate with CVD SiC coating Monolithic high-purity CVD SiC tray (\u226599.99%) Compared with conventional graphite carriers, this product offers significantly improved thermal stability, corrosion resistance, and 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|
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-3-300x300.png\")
Le plateau en c\u00e9ramique SiC est un support de plaquettes de haute performance con\u00e7u pour les proc\u00e9d\u00e9s de semi-conducteurs avanc\u00e9s tels que MOCVD, \u00e9pitaxie et gravure ICP. Il est disponible en deux structures :<\/p>\n![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-1-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-2-300x300.png\")
<\/p>\n