SiC : la meilleure combinaison de rigidit\u00e9, de propret\u00e9 et de durabilit\u00e9<\/li>\n<\/ul>\n
\nQ2 : Peut-il prendre en charge des plaquettes de 450 mm ?<\/h3>\n
Oui, des conceptions personnalis\u00e9es sont disponibles pour les syst\u00e8mes de manutention de plaquettes de 450 mm.<\/p>\n
\nQ3 : Est-il adapt\u00e9 \u00e0 la lithographie EUV ?<\/h3>\n
Oui. Les effecteurs SiC r\u00e9pondent aux exigences de compatibilit\u00e9 avec les particules ultra-faibles et le vide.<\/p>\n
\nQ4 : Peut-on l'utiliser dans des syst\u00e8mes sous vide et \u00e0 haute temp\u00e9rature ?<\/h3>\n
Oui. Le SiC fonctionne de mani\u00e8re stable dans des environnements sous vide, plasma et \u00e0 haute temp\u00e9rature.<\/p>","protected":false},"excerpt":{"rendered":"
The Silicon Carbide (SiC) Ceramic End Effector is a high-precision wafer handling component designed for semiconductor automation systems, including wafer transfer robots, AMHS systems, EUV lithography equipment, and high-temperature process tools. Made from high-purity CVD SiC or engineered SSiC, this end effector delivers exceptional rigidity, ultra-low particle generation, and outstanding thermal and chemical stability. 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![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Customized-SiC-Ceramic-End-Effector-for-Wafer-Handling-3-300x300.png\")
L'effecteur en c\u00e9ramique de carbure de silicium (SiC) est un composant de manipulation de plaquettes de haute pr\u00e9cision con\u00e7u pour les syst\u00e8mes d'automatisation des semi-conducteurs, notamment les robots de transfert de plaquettes, les syst\u00e8mes AMHS, les \u00e9quipements de lithographie EUV et les outils de traitement \u00e0 haute temp\u00e9rature.<\/p>\n![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Customized-SiC-Ceramic-End-Effector-for-Wafer-Handling-2-300x300.png\")
<\/h2>\n