\n| K\u00e4ytt\u00f6ik\u00e4<\/td>\n | ~4\u00d7 grafiittipohjaiset lokerot<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\nSovellusalueet<\/span><\/h1>\nPuolijohteiden valmistus<\/span><\/h3>\n\n- MOCVD (Metal Organic Chemical Vapor Deposition, orgaaninen kemiallinen h\u00f6yrystyminen)<\/li>\n
- Epitaksiaalinen kiekon kasvatus (GaN, SiC jne.).<\/li>\n
- ICP-sy\u00f6vytysprosessit<\/li>\n
- Korkean tarkkuuden kiekkojen k\u00e4sittelyj\u00e4rjestelm\u00e4t<\/li>\n<\/ul>\n
LED-teollisuus<\/span><\/h3>\n\n- Korkean kirkkauden sininen ja valkoinen LED-tuotanto<\/li>\n
- GaN-pohjaiset optoelektroniset laitteet<\/li>\n<\/ul>\n
Kehittynyt elektroniikka<\/span><\/h3>\n\n- Tehopuolijohteet<\/li>\n
- Suurtaajuuslaitteet<\/li>\n
- Tarkkuus ohutkalvop\u00e4\u00e4llystysj\u00e4rjestelm\u00e4t<\/li>\n<\/ul>\n
\nSuorituskykyedut verrattuna perinteisiin grafiittilautasiin<\/span><\/h1>\n\n \n \n\n\n| Kohde<\/th>\n | Grafiitti tarjotin<\/th>\n | CVD SiC-pinnoitettu tarjotin<\/th>\n<\/tr>\n<\/thead>\n | \n\n| L\u00e4mp\u00f6tilan kest\u00e4vyys<\/td>\n | Medium<\/td>\n | Eritt\u00e4in korkea<\/td>\n<\/tr>\n | \n| Korroosionkest\u00e4vyys<\/td>\n | Huono<\/td>\n | Erinomainen<\/td>\n<\/tr>\n | \n| Hiukkasten aiheuttama saastuminen<\/td>\n | Korkea riski<\/td>\n | Minimaalinen<\/td>\n<\/tr>\n | \n| K\u00e4ytt\u00f6ik\u00e4<\/td>\n | Lyhyt<\/td>\n | 3-4\u00d7 pidempi<\/td>\n<\/tr>\n | \n| Pinnan vakaus<\/td>\n | Hajoaa ajan my\u00f6t\u00e4<\/td>\n | Eritt\u00e4in vakaa<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\nPakkaus ja k\u00e4sittely<\/span><\/h1>\n\n- Saatavana puhdastilaluokan pakkaus<\/li>\n
- Iskunkest\u00e4v\u00e4 puulaatikko tai tyhji\u00f6pakkaus<\/li>\n
- Suunniteltu puolijohteiden kontaminaatiovapaaseen kuljetukseen<\/li>\n
- Tuetaan mukautettuja kokoja (\u03a6380-\u03a6600 mm tai r\u00e4\u00e4t\u00e4l\u00f6ityj\u00e4 malleja).<\/li>\n<\/ul>\n
\nMiksi valita t\u00e4m\u00e4 tuote<\/span><\/h1>\nT\u00e4m\u00e4 SiC-kiekkojen kantoteline on suunniteltu seuraavan sukupolven puolijohdevalmistukseen, jossa puhtaus, l\u00e4mp\u00f6stabiilisuus ja kontaminaation hallinta ovat kriittisi\u00e4. Korvaamalla perinteiset grafiittipohjaiset kantoaineet se parantaa merkitt\u00e4v\u00e4sti tuotannon tuottoa, v\u00e4hent\u00e4\u00e4 yll\u00e4pitokustannuksia ja varmistaa prosessin vakaan pitk\u00e4n aikav\u00e4lin suorituskyvyn.<\/p>\n
\nFAQ<\/span><\/h1>\nQ1: Mik\u00e4 on CVD SiC-pinnoitteen t\u00e4rkein etu verrattuna grafiittilautasiin?<\/span><\/h3>\nCVD-SiC-pinnoite muodostaa tihe\u00e4n, eritt\u00e4in puhtaan suojakerroksen, joka est\u00e4\u00e4 kaasun tunkeutumisen ja grafiittihiukkasten irtoamisen, mik\u00e4 parantaa huomattavasti kest\u00e4vyytt\u00e4 ja v\u00e4hent\u00e4\u00e4 kiekon saastumista.<\/p>\n
\nKysymys 2: Voidaanko t\u00e4t\u00e4 SiC-tarjotinta k\u00e4ytt\u00e4\u00e4 MOCVD-korkean l\u00e4mp\u00f6tilan prosesseissa?<\/span><\/h3>\nKyll\u00e4. Se on suunniteltu erityisesti MOCVD-sovelluksiin, ja se toimii luotettavasti 1100-1200 \u00b0C:n l\u00e4mp\u00f6tilassa erinomaisen l\u00e4mp\u00f6stabiilin ja tasaisen l\u00e4mm\u00f6njakautumisen ansiosta.<\/p>\n
\nKysymys 3: Mit\u00e4 eroa on p\u00e4\u00e4llystetyill\u00e4 grafiittilautasilla ja t\u00e4ydellisill\u00e4 CVD-SiC-lautasilla?<\/span><\/h3>\nPinnoitetuissa grafiittilokerikoissa k\u00e4ytet\u00e4\u00e4n grafiittiytimen kanssa suojaavaa SiC-kerrosta, kun taas t\u00e4ysin CVD-SiC-kerikot ovat monoliittisia rakenteita, joilla on korkeampi puhtaus, parempi korroosionkest\u00e4vyys ja pidempi k\u00e4ytt\u00f6ik\u00e4.<\/p>","protected":false},"excerpt":{"rendered":" The SiC ceramic tray plate is a high-performance wafer carrier designed for advanced semiconductor processes such as MOCVD, epitaxy, and ICP etching. It is available in two structures: Graphite substrate with CVD SiC coating Monolithic high-purity CVD SiC tray (\u226599.99%) Compared with conventional graphite carriers, this product offers significantly improved thermal stability, corrosion resistance, and 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| |
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-3-300x300.png\")
SiC-keramiikkalevy on suorituskykyinen kiekkokantaja, joka on suunniteltu kehittyneisiin puolijohdeprosesseihin, kuten MOCVD-, epitaksia- ja ICP-sy\u00f6vytykseen. Sit\u00e4 on saatavana kahtena rakenteena:<\/p>\n![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-1-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-2-300x300.png\")
<\/p>\n