{"id":2041,"date":"2026-05-08T05:45:52","date_gmt":"2026-05-08T05:45:52","guid":{"rendered":"https:\/\/www.xkh-ceramics.com\/?post_type=product&#038;p=2041"},"modified":"2026-05-08T05:45:52","modified_gmt":"2026-05-08T05:45:52","slug":"sic-ceramic-end-effector-for-precision-wafer-handling-in-semiconductor-equipment","status":"publish","type":"product","link":"https:\/\/www.xkh-ceramics.com\/fi\/product\/sic-ceramic-end-effector-for-precision-wafer-handling-in-semiconductor-equipment\/","title":{"rendered":"SiC-keraaminen p\u00e4\u00e4tehahmo kiekkojen tarkkaan k\u00e4sittelyyn puolijohdelaitteissa"},"content":{"rendered":"<p data-start=\"258\" data-end=\"597\"><img fetchpriority=\"high\" decoding=\"async\" class=\"size-medium wp-image-2045 alignright\" src=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-300x300.png 300w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-150x150.png 150w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-768x768.png 768w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-12x12.png 12w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-600x600.png 600w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-100x100.png 100w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>The <strong data-start=\"262\" data-end=\"290\">SiC-keraaminen p\u00e4\u00e4tepiste<\/strong> on suorituskykyinen kiekkojen k\u00e4sittelykomponentti, joka on suunniteltu puolijohdeautomaatio- ja tarkkuusrobottij\u00e4rjestelmiin. Se on valmistettu eritt\u00e4in puhtaasta piikarbidikeramiikasta (SiC), joka tarjoaa erinomaisen mekaanisen lujuuden, l\u00e4mp\u00f6stabiilisuuden ja kemiallisen kest\u00e4vyyden \u00e4\u00e4rimm\u00e4isiss\u00e4 prosessiymp\u00e4rist\u00f6iss\u00e4.<\/p>\n<p data-start=\"599\" data-end=\"945\">Verrattuna tavanomaisiin alumiini-, ruostumattomasta ter\u00e4ksest\u00e4 tai kvartsista valmistettuihin p\u00e4\u00e4tepistokkeisiin on <strong data-start=\"682\" data-end=\"710\">SiC-keraaminen p\u00e4\u00e4tepiste<\/strong> tuottaa huomattavasti v\u00e4hemm\u00e4n hiukkasia, on ylivoimaisen mittatarkka ja kest\u00e4\u00e4 erinomaisesti l\u00e4mp\u00f6muodonmuutoksia. Sit\u00e4 k\u00e4ytet\u00e4\u00e4n laajalti kiekonsiirtoj\u00e4rjestelmiss\u00e4, joissa tarkkuus, puhtaus ja luotettavuus ovat kriittisi\u00e4.<\/p>\n<p data-start=\"947\" data-end=\"1102\">T\u00e4m\u00e4 tuote soveltuu kehittyneisiin puolijohteiden valmistusymp\u00e4rist\u00f6ihin, kuten tyhji\u00f6kammioihin, plasmaprosesseihin ja korkean l\u00e4mp\u00f6tilan laitteisiin.<\/p>\n<hr data-start=\"1104\" data-end=\"1107\" \/>\n<h2 data-section-id=\"1cgu054\" data-start=\"1109\" data-end=\"1136\">Tekniset tiedot<\/h2>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"1138\" data-end=\"1584\">\n<thead data-start=\"1138\" data-end=\"1165\">\n<tr data-start=\"1138\" data-end=\"1165\">\n<th class=\"\" data-start=\"1138\" data-end=\"1149\" data-col-size=\"sm\">Kiinteist\u00f6<\/th>\n<th class=\"\" data-start=\"1149\" data-end=\"1156\" data-col-size=\"sm\">Yksikk\u00f6<\/th>\n<th class=\"\" data-start=\"1156\" data-end=\"1165\" data-col-size=\"sm\">Arvo<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"1194\" data-end=\"1584\">\n<tr data-start=\"1194\" data-end=\"1233\">\n<td data-start=\"1194\" data-end=\"1214\" data-col-size=\"sm\">Kiderakenne<\/td>\n<td data-start=\"1214\" data-end=\"1218\" data-col-size=\"sm\">-<\/td>\n<td data-col-size=\"sm\" data-start=\"1218\" data-end=\"1233\">FCC \u03b2 vaihe<\/td>\n<\/tr>\n<tr data-start=\"1234\" data-end=\"1260\">\n<td data-start=\"1234\" data-end=\"1244\" data-col-size=\"sm\">Tiheys<\/td>\n<td data-start=\"1244\" data-end=\"1252\" data-col-size=\"sm\">g\/cm\u00b3<\/td>\n<td data-col-size=\"sm\" data-start=\"1252\" data-end=\"1260\">3.21<\/td>\n<\/tr>\n<tr data-start=\"1261\" data-end=\"1295\">\n<td data-start=\"1261\" data-end=\"1279\" data-col-size=\"sm\">Kemiallinen puhtaus<\/td>\n<td data-start=\"1279\" data-end=\"1283\" data-col-size=\"sm\">%<\/td>\n<td data-start=\"1283\" data-end=\"1295\" data-col-size=\"sm\">99.99995<\/td>\n<\/tr>\n<tr data-start=\"1296\" data-end=\"1320\">\n<td data-start=\"1296\" data-end=\"1307\" data-col-size=\"sm\">Kovuus<\/td>\n<td data-col-size=\"sm\" data-start=\"1307\" data-end=\"1312\">HV<\/td>\n<td data-col-size=\"sm\" data-start=\"1312\" data-end=\"1320\">2500<\/td>\n<\/tr>\n<tr data-start=\"1321\" data-end=\"1354\">\n<td data-start=\"1321\" data-end=\"1341\" data-col-size=\"sm\">Taivutuslujuus<\/td>\n<td data-col-size=\"sm\" data-start=\"1341\" data-end=\"1347\">MPa<\/td>\n<td data-col-size=\"sm\" data-start=\"1347\" data-end=\"1354\">415<\/td>\n<\/tr>\n<tr data-start=\"1355\" data-end=\"1386\">\n<td data-start=\"1355\" data-end=\"1373\" data-col-size=\"sm\">Youngin moduuli<\/td>\n<td data-start=\"1373\" data-end=\"1379\" data-col-size=\"sm\">GPa<\/td>\n<td data-col-size=\"sm\" data-start=\"1379\" data-end=\"1386\">430<\/td>\n<\/tr>\n<tr data-start=\"1387\" data-end=\"1425\">\n<td data-start=\"1387\" data-end=\"1410\" data-col-size=\"sm\">L\u00e4mm\u00f6njohtavuus<\/td>\n<td data-start=\"1410\" data-end=\"1418\" data-col-size=\"sm\">W\/m-K<\/td>\n<td data-col-size=\"sm\" data-start=\"1418\" data-end=\"1425\">300<\/td>\n<\/tr>\n<tr data-start=\"1426\" data-end=\"1474\">\n<td data-start=\"1426\" data-end=\"1458\" data-col-size=\"sm\">L\u00e4mp\u00f6laajenemiskerroin<\/td>\n<td data-start=\"1458\" data-end=\"1467\" data-col-size=\"sm\">10-\u2076\/K<\/td>\n<td data-start=\"1467\" data-end=\"1474\" data-col-size=\"sm\">4.5<\/td>\n<\/tr>\n<tr data-start=\"1475\" data-end=\"1520\">\n<td data-start=\"1475\" data-end=\"1507\" data-col-size=\"sm\">Suurin k\u00e4ytt\u00f6l\u00e4mp\u00f6tila<\/td>\n<td data-start=\"1507\" data-end=\"1512\" data-col-size=\"sm\">\u00b0C<\/td>\n<td data-start=\"1512\" data-end=\"1520\" data-col-size=\"sm\">2700<\/td>\n<\/tr>\n<tr data-start=\"1521\" data-end=\"1557\">\n<td data-start=\"1521\" data-end=\"1537\" data-col-size=\"sm\">L\u00e4mp\u00f6kapasiteetti<\/td>\n<td data-col-size=\"sm\" data-start=\"1537\" data-end=\"1550\">J-kg-\u00b9-K-\u00b9<\/td>\n<td data-col-size=\"sm\" data-start=\"1550\" data-end=\"1557\">640<\/td>\n<\/tr>\n<tr data-start=\"1558\" data-end=\"1584\">\n<td data-start=\"1558\" data-end=\"1571\" data-col-size=\"sm\">Raekoko<\/td>\n<td data-start=\"1571\" data-end=\"1576\" data-col-size=\"sm\">\u03bcm<\/td>\n<td data-start=\"1576\" data-end=\"1584\" data-col-size=\"sm\">2-10<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<hr data-start=\"1586\" data-end=\"1589\" \/>\n<h2 data-section-id=\"1ma7m6t\" data-start=\"1591\" data-end=\"1606\"><img decoding=\"async\" class=\"size-medium wp-image-2042 alignright\" src=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-3-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-3-300x300.png 300w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-3-150x150.png 150w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-3-768x768.png 768w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-3-12x12.png 12w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-3-600x600.png 600w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-3-100x100.png 100w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-3.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>T\u00e4rkeimm\u00e4t ominaisuudet<\/h2>\n<p data-start=\"1608\" data-end=\"1706\"><strong data-start=\"1608\" data-end=\"1638\">Eritt\u00e4in eritt\u00e4in puhdas materiaali<\/strong><br data-start=\"1638\" data-end=\"1641\" \/>Varmistaa minimaalisen hiukkaskontaminaation puhdastilaymp\u00e4rist\u00f6iss\u00e4.<\/p>\n<p data-start=\"1708\" data-end=\"1836\"><strong data-start=\"1708\" data-end=\"1739\">Erinomainen l\u00e4mm\u00f6nkest\u00e4vyys<\/strong><br data-start=\"1739\" data-end=\"1742\" \/>S\u00e4ilytt\u00e4\u00e4 rakenteellisen eheyden toistuvissa l\u00e4mp\u00f6kierroissa ja korkean l\u00e4mp\u00f6tilan k\u00e4sittelyss\u00e4.<\/p>\n<p data-start=\"1838\" data-end=\"1934\"><strong data-start=\"1838\" data-end=\"1863\">Alhainen l\u00e4mp\u00f6laajeneminen<\/strong><br data-start=\"1863\" data-end=\"1866\" \/>Tarjoaa suuren mittatarkkuuden kiekonsiirtotoimien aikana.<\/p>\n<p data-start=\"1936\" data-end=\"2051\"><strong data-start=\"1936\" data-end=\"1964\">Korkea mekaaninen lujuus<\/strong><br data-start=\"1964\" data-end=\"1967\" \/>Kest\u00e4\u00e4 murtumista, kulumista ja pitk\u00e4aikaista v\u00e4symist\u00e4 jatkuvissa tuotantoj\u00e4rjestelmiss\u00e4.<\/p>\n<p data-start=\"2053\" data-end=\"2138\"><strong data-start=\"2053\" data-end=\"2076\">Kemiallinen kest\u00e4vyys<\/strong><br data-start=\"2076\" data-end=\"2079\" \/>Vakaa plasmassa, sy\u00f6vytt\u00e4viss\u00e4 kaasuissa ja tyhji\u00f6ymp\u00e4rist\u00f6iss\u00e4.<\/p>\n<p data-start=\"2140\" data-end=\"2228\"><strong data-start=\"2140\" data-end=\"2171\">Eritt\u00e4in sile\u00e4 pintak\u00e4sittely<\/strong><br data-start=\"2171\" data-end=\"2174\" \/>V\u00e4hent\u00e4\u00e4 kiekkojen naarmuuntumista ja parantaa k\u00e4sittelyn turvallisuutta.<\/p>\n<p data-start=\"2230\" data-end=\"2319\"><strong data-start=\"2230\" data-end=\"2251\">Pitk\u00e4 k\u00e4ytt\u00f6ik\u00e4<\/strong><br data-start=\"2251\" data-end=\"2254\" \/>Suunniteltu suuritehoisiin puolijohteiden valmistusj\u00e4rjestelmiin.<\/p>\n<hr data-start=\"2321\" data-end=\"2324\" \/>\n<h2 data-section-id=\"2gad1q\" data-start=\"2326\" data-end=\"2350\">Valmistusprosessi<\/h2>\n<p data-start=\"2352\" data-end=\"2443\">The <strong data-start=\"2356\" data-end=\"2384\">SiC-keraaminen p\u00e4\u00e4tepiste<\/strong> valmistetaan k\u00e4ytt\u00e4en kehittyneit\u00e4 keraamisia tekniikoita.<\/p>\n<p data-start=\"2445\" data-end=\"2547\">Eritt\u00e4in puhdas piikarbidijauhe valitaan ja sit\u00e4 valvotaan tiukasti materiaalin yhdenmukaisuuden varmistamiseksi.<\/p>\n<p data-start=\"2549\" data-end=\"2663\">Tarkkuusmuovauksessa k\u00e4ytet\u00e4\u00e4n kylm\u00e4\u00e4 isostaattista puristusta tai ruiskuvalua monimutkaisten geometrioiden saavuttamiseksi.<\/p>\n<p data-start=\"2665\" data-end=\"2757\">Korkeassa l\u00e4mp\u00f6tilassa yli 2000 \u00b0C:ssa tapahtuva sintraus takaa t\u00e4ydellisen tiivistymisen ja rakenteellisen vakauden.<\/p>\n<p data-start=\"2759\" data-end=\"2851\">CNC-timanttikoneistuksella saavutetaan mikrotason tarkkuus ja kiekkoluokan tasaisuus.<\/p>\n<p data-start=\"2853\" data-end=\"2937\">Loppukiillotus ja tarkastus varmistavat puolijohdelaatua koskevien standardien noudattamisen.<\/p>\n<p data-start=\"2939\" data-end=\"3065\">Jokaiselle tuotteelle tehd\u00e4\u00e4n ennen toimitusta tiukka mittatarkastus, pinnanlaadun testaus ja rikkomaton arviointi.<\/p>\n<hr data-start=\"3067\" data-end=\"3070\" \/>\n<h2 data-section-id=\"mu966k\" data-start=\"3072\" data-end=\"3087\">Sovellukset<\/h2>\n<p data-start=\"3089\" data-end=\"3192\">The <strong data-start=\"3093\" data-end=\"3121\">SiC-keraaminen p\u00e4\u00e4tepiste<\/strong> k\u00e4ytet\u00e4\u00e4n laajalti puolijohde- ja korkean tarkkuuden automaatioj\u00e4rjestelmiss\u00e4.<\/p>\n<p data-start=\"3194\" data-end=\"3255\">Kiekonsiirtoj\u00e4rjestelm\u00e4t 6, 8 ja 12 tuuman kiekkoille.<\/p>\n<p data-start=\"3257\" data-end=\"3306\">Robotisoidut kiekkojen k\u00e4sittelyj\u00e4rjestelm\u00e4t tyhji\u00f6kammioissa<\/p>\n<p data-start=\"3308\" data-end=\"3351\">CVD-, ALD-, sy\u00f6vytys- ja laskeutuslaitteistot<\/p>\n<p data-start=\"3353\" data-end=\"3400\">FOUP- ja FOSB-automaattiset lastaus- ja purkuj\u00e4rjestelm\u00e4t<\/p>\n<p data-start=\"3402\" data-end=\"3445\">Puhdastilan kiekkojen automatisointi tuotantolinjat<\/p>\n<p data-start=\"3447\" data-end=\"3493\">Laserty\u00f6st\u00f6- ja l\u00e4mp\u00f6hehkutusj\u00e4rjestelm\u00e4t<\/p>\n<p data-start=\"3447\" data-end=\"3493\"><img decoding=\"async\" class=\"wp-image-2046 size-full aligncenter\" src=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment.jpg\" alt=\"\" width=\"680\" height=\"204\" srcset=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment.jpg 680w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-300x90.jpg 300w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-18x5.jpg 18w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-600x180.jpg 600w\" sizes=\"(max-width: 680px) 100vw, 680px\" \/><\/p>\n<hr data-start=\"3495\" data-end=\"3498\" \/>\n<h2 data-section-id=\"14xaw73\" data-start=\"3500\" data-end=\"3549\">Edut verrattuna perinteisiin materiaaleihin<\/h2>\n<p data-start=\"3551\" data-end=\"3676\">Alumiinisiin p\u00e4\u00e4tehostimiin verrattuna SiC-keramiikka tarjoaa paremman l\u00e4mp\u00f6stabiilisuuden ja eliminoi metallien kontaminaatioriskin.<\/p>\n<p data-start=\"3678\" data-end=\"3767\">Kvartsiin verrattuna sen mekaaninen lujuus on suurempi ja hiukkasten muodostuminen v\u00e4h\u00e4isemp\u00e4\u00e4.<\/p>\n<p data-start=\"3769\" data-end=\"3870\">Ruostumattomaan ter\u00e4kseen verrattuna se toimii luotettavammin plasma- ja korkean l\u00e4mp\u00f6tilan ymp\u00e4rist\u00f6iss\u00e4.<\/p>\n<hr data-start=\"3872\" data-end=\"3875\" \/>\n<h2 data-section-id=\"1hryhf7\" data-start=\"3877\" data-end=\"3883\">FAQ<\/h2>\n<p data-start=\"3885\" data-end=\"4113\"><strong data-start=\"3885\" data-end=\"3952\">Miksi valita SiC-keraaminen p\u00e4\u00e4tehoseula metallin tai kvartsin sijaan?<\/strong><br data-start=\"3952\" data-end=\"3955\" \/>SiC-keraaminen materiaali tarjoaa erinomaisen l\u00e4mp\u00f6stabiilisuuden, kemiallisen kest\u00e4vyyden ja eritt\u00e4in alhaisen hiukkastuotannon, joten se on ihanteellinen kehittyneisiin puolijohdeprosesseihin.<\/p>\n<p data-start=\"4115\" data-end=\"4259\"><strong data-start=\"4115\" data-end=\"4140\">Voiko sit\u00e4 mukauttaa?<\/strong><br data-start=\"4140\" data-end=\"4143\" \/>Kyll\u00e4, tuemme t\u00e4ydellist\u00e4 r\u00e4\u00e4t\u00e4l\u00f6inti\u00e4, mukaan lukien geometria, varren pituus, asennusliit\u00e4nt\u00e4 ja kiekkokoon yhteensopivuus.<\/p>\n<p data-start=\"4261\" data-end=\"4417\"><strong data-start=\"4261\" data-end=\"4310\">Soveltuuko se tyhji\u00f6- ja plasmaj\u00e4rjestelmiin?<\/strong><br data-start=\"4310\" data-end=\"4313\" \/>Kyll\u00e4, SiC-keraamiikka on kemiallisesti inertti\u00e4 ja toimii luotettavasti eritt\u00e4in korkeassa tyhji\u00f6ss\u00e4 ja plasmaymp\u00e4rist\u00f6iss\u00e4.<\/p>\n<p data-start=\"4419\" data-end=\"4588\"><strong data-start=\"4419\" data-end=\"4448\">Mik\u00e4 on k\u00e4ytt\u00f6ik\u00e4?<\/strong><br data-start=\"4448\" data-end=\"4451\" \/>Se tarjoaa huomattavasti pidemm\u00e4n k\u00e4ytt\u00f6i\u00e4n verrattuna tavanomaisiin metalli- tai kvartsip\u00e4\u00e4tteisiin tavanomaisissa k\u00e4ytt\u00f6olosuhteissa.<\/p>\n<p data-start=\"4590\" data-end=\"4741\"><strong data-start=\"4590\" data-end=\"4628\">Toimitatteko tarkastusraportteja?<\/strong><br data-start=\"4628\" data-end=\"4631\" \/>Kyll\u00e4, toimitamme pyydett\u00e4ess\u00e4 mittaraportteja, materiaalitodistuksia ja laatutarkastusasiakirjoja.<\/p>","protected":false},"excerpt":{"rendered":"<p>The <strong data-start=\"262\" data-end=\"290\">SiC-keraaminen p\u00e4\u00e4tepiste<\/strong> on suorituskykyinen kiekkojen k\u00e4sittelykomponentti, joka on suunniteltu puolijohdeautomaatio- ja tarkkuusrobottij\u00e4rjestelmiin. Se on valmistettu eritt\u00e4in puhtaasta piikarbidikeramiikasta (SiC), joka tarjoaa erinomaisen mekaanisen lujuuden, l\u00e4mp\u00f6stabiilisuuden ja kemiallisen kest\u00e4vyyden \u00e4\u00e4rimm\u00e4isiss\u00e4 prosessiymp\u00e4rist\u00f6iss\u00e4.<\/p>","protected":false},"featured_media":2045,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center 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