\n| Stabilit\u00e4t der Oberfl\u00e4che<\/td>\n | Verschlechtert sich mit der Zeit<\/td>\n | \u00c4u\u00dferst stabil<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\nVerpackung und Handhabung<\/span><\/h1>\n\n- Reinraumtaugliche Verpackung verf\u00fcgbar<\/li>\n
- Sto\u00dfsichere Holzkiste oder Vakuumversiegelung<\/li>\n
- Entwickelt f\u00fcr den kontaminationsfreien Transport von Halbleitern<\/li>\n
- Kundenspezifische Gr\u00f6\u00dfen werden unterst\u00fctzt (\u03a6380-\u03a6600 mm oder ma\u00dfgeschneiderte Designs)<\/li>\n<\/ul>\n
\nWarum dieses Produkt w\u00e4hlen<\/span><\/h1>\nDieser SiC-Wafertr\u00e4ger wurde f\u00fcr die Halbleiterfertigung der n\u00e4chsten Generation entwickelt, bei der Reinheit, thermische Stabilit\u00e4t und Kontaminationskontrolle entscheidend sind. Durch den Ersatz herk\u00f6mmlicher graphitbasierter Tr\u00e4ger wird die Produktionsausbeute erheblich verbessert, die Wartungskosten werden gesenkt und eine stabile langfristige Prozessleistung gew\u00e4hrleistet.<\/p>\n
\nFAQ<\/span><\/h1>\nF1: Was ist der Hauptvorteil der CVD-SiC-Beschichtung im Vergleich zu Graphitplatten?<\/span><\/h3>\nDie CVD-SiC-Beschichtung bildet eine dichte, hochreine Schutzschicht, die das Eindringen von Gasen und die Abl\u00f6sung von Graphitpartikeln verhindert, was die Haltbarkeit erheblich verbessert und die Verunreinigung der Wafer reduziert.<\/p>\n
\nF2: Kann diese SiC-Schale in MOCVD-Hochtemperaturprozessen verwendet werden?<\/span><\/h3>\nJa, sie wurde speziell f\u00fcr MOCVD-Anwendungen entwickelt und kann zuverl\u00e4ssig bei 1100-1200 \u00b0C mit hervorragender thermischer Stabilit\u00e4t und gleichm\u00e4\u00dfiger W\u00e4rmeverteilung arbeiten.<\/p>\n
\nF3: Was ist der Unterschied zwischen beschichteten Graphitplatten und vollst\u00e4ndigen CVD-SiC-Platten?<\/span><\/h3>\nBei beschichteten Graphitb\u00f6den wird ein Graphitkern mit einer sch\u00fctzenden SiC-Schicht verwendet, w\u00e4hrend SiC-B\u00f6den mit CVD-Beschichtung monolithische Strukturen mit h\u00f6herer Reinheit, besserer Korrosionsbest\u00e4ndigkeit und l\u00e4ngerer Lebensdauer sind.<\/p>","protected":false},"excerpt":{"rendered":" The SiC ceramic tray plate is a high-performance wafer carrier designed for advanced semiconductor processes such as MOCVD, epitaxy, and ICP etching. It is available in two structures: Graphite substrate with CVD SiC coating Monolithic high-purity CVD SiC tray (\u226599.99%) Compared with conventional graphite carriers, this product offers significantly improved thermal stability, corrosion resistance, and 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|
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-3-300x300.png\")
Die SiC-Keramik-Trayplatte ist ein hochleistungsf\u00e4higer Wafertr\u00e4ger, der f\u00fcr moderne Halbleiterprozesse wie MOCVD, Epitaxie und ICP-\u00c4tzen entwickelt wurde. Sie ist in zwei Strukturen erh\u00e4ltlich:<\/p>\n![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-1-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-2-300x300.png\")
<\/p>\n