{"id":2331,"date":"2026-05-29T03:20:28","date_gmt":"2026-05-29T03:20:28","guid":{"rendered":"https:\/\/www.xkh-ceramics.com\/?post_type=product&#038;p=2331"},"modified":"2026-05-29T03:21:23","modified_gmt":"2026-05-29T03:21:23","slug":"silicon-carbide-horizontal-process-tube-for-lpcvd-cvd-semiconductor-processes","status":"publish","type":"product","link":"https:\/\/www.xkh-ceramics.com\/cs\/product\/silicon-carbide-horizontal-process-tube-for-lpcvd-cvd-semiconductor-processes\/","title":{"rendered":"Horizont\u00e1ln\u00ed procesn\u00ed trubice karbidu k\u0159em\u00edku pro polovodi\u010dov\u00e9 procesy LPCVD\/CVD"},"content":{"rendered":"<p class=\"isSelectedEnd\"><img fetchpriority=\"high\" decoding=\"async\" class=\"size-medium wp-image-2332 alignright\" src=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-2-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-2-300x300.png 300w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-2-150x150.png 150w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-2-768x768.png 768w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-2-12x12.png 12w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-2-600x600.png 600w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-2-100x100.png 100w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-2.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>Horizont\u00e1ln\u00ed procesn\u00ed trubice na karbid k\u0159em\u00edku (SiC) je ur\u010dena pro vysokoteplotn\u00ed LPCVD, CVD, difuzn\u00ed, oxida\u010dn\u00ed a \u017e\u00edhac\u00ed aplikace p\u0159i v\u00fdrob\u011b polovodi\u010d\u016f, fotovoltaick\u00fdch a pokro\u010dil\u00fdch materi\u00e1l\u016f.<\/p>\n<p class=\"isSelectedEnd\">Procesn\u00ed trubice jako hlavn\u00ed sou\u010d\u00e1st reak\u010dn\u00ed komory v horizont\u00e1ln\u00edch syst\u00e9mech tepeln\u00e9ho zpracov\u00e1n\u00ed p\u0159\u00edmo ovliv\u0148uje rovnom\u011brnost teploty, kontrolu kontaminace, stabilitu procesu a celkovou \u017eivotnost za\u0159\u00edzen\u00ed.<\/p>\n<p class=\"isSelectedEnd\">Na\u0161e horizont\u00e1ln\u00ed procesn\u00ed trubky SiC se vyr\u00e1b\u011bj\u00ed pomoc\u00ed pokro\u010dil\u00e9 technologie monolitick\u00e9ho 3D tisku v kombinaci s povlakem karbidu k\u0159em\u00edku s velmi vysokou \u010distotou CVD. Beze\u0161v\u00e1 struktura z jednoho kusu eliminuje svarov\u00e9 spoje a slab\u00e1 m\u00edsta souvisej\u00edc\u00ed s mont\u00e1\u017e\u00ed, co\u017e v\u00fdrazn\u011b zvy\u0161uje mechanickou spolehlivost a odolnost proti \u00faniku p\u0159i nep\u0159etr\u017eit\u00e9m provozu za vysok\u00fdch teplot.<\/p>\n<p class=\"isSelectedEnd\">V porovn\u00e1n\u00ed s b\u011b\u017en\u00fdmi k\u0159emenn\u00fdmi procesn\u00edmi trubicemi nab\u00edz\u00ed karbid k\u0159em\u00edku v\u00fdrazn\u011b vy\u0161\u0161\u00ed tepelnou vodivost, lep\u0161\u00ed odolnost proti teplotn\u00edm \u0161ok\u016fm, vynikaj\u00edc\u00ed odolnost proti korozi a del\u0161\u00ed provozn\u00ed \u017eivotnost, zejm\u00e9na v agresivn\u00edch oxida\u010dn\u00edch procesn\u00edch prost\u0159ed\u00edch a v procesn\u00edch prost\u0159ed\u00edch obsahuj\u00edc\u00edch chlor.<\/p>\n<p class=\"isSelectedEnd\">V\u00fdrobek je optimalizov\u00e1n pro prost\u0159ed\u00ed \u010dist\u00e9ho zpracov\u00e1n\u00ed polovodi\u010d\u016f, kter\u00e9 vy\u017eaduje n\u00edzkou tvorbu \u010d\u00e1stic, n\u00edzkou kontaminaci kovy a stabiln\u00ed tepeln\u00fd v\u00fdkon a\u017e do 1250 \u00b0C.<\/p>\n<div contenteditable=\"false\">\n<hr \/>\n<\/div>\n<h1>Kl\u00ed\u010dov\u00e9 vlastnosti<\/h1>\n<h2><img decoding=\"async\" class=\"size-medium wp-image-2333 alignright\" src=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-1-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-1-300x300.png 300w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-1-150x150.png 150w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-1-768x768.png 768w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-1-12x12.png 12w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-1-600x600.png 600w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-1-100x100.png 100w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-1.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>Monolitick\u00e1 jednod\u00edln\u00e1 struktura SiC<\/h2>\n<p class=\"isSelectedEnd\">Integrovan\u00e9 3D ti\u0161t\u011bn\u00e9 t\u011blo z karbidu k\u0159em\u00edku eliminuje \u0161vy, m\u00edsta p\u00e1jen\u00ed a potenci\u00e1ln\u00ed net\u011bsnosti, kter\u00e9 se vyskytuj\u00ed u tradi\u010dn\u00edch montovan\u00fdch konstrukc\u00ed.<\/p>\n<p class=\"isSelectedEnd\">Mezi v\u00fdhody pat\u0159\u00ed:<\/p>\n<ul data-spread=\"false\">\n<li>Vy\u0161\u0161\u00ed struktur\u00e1ln\u00ed stabilita<\/li>\n<li>Zlep\u0161en\u00e1 integrita vakua<\/li>\n<li>Lep\u0161\u00ed rozm\u011brov\u00e1 konzistence<\/li>\n<li>Sn\u00ed\u017een\u00e1 koncentrace tepeln\u00e9ho nap\u011bt\u00ed<\/li>\n<\/ul>\n<h2>Povlak CVD SiC s velmi vysokou \u010distotou<\/h2>\n<p class=\"isSelectedEnd\">Hust\u00fd povlak karbidu k\u0159em\u00edku CVD poskytuje:<\/p>\n<ul data-spread=\"false\">\n<li>Povrchov\u00e9 ne\u010distoty pod 5 ppm<\/li>\n<li>Vynikaj\u00edc\u00ed chemick\u00e1 inertnost<\/li>\n<li>Sn\u00ed\u017een\u00ed kontaminace \u010d\u00e1sticemi<\/li>\n<li>Vynikaj\u00edc\u00ed odolnost v\u016f\u010di oxidaci a plyn\u016fm obsahuj\u00edc\u00edm chlor<\/li>\n<\/ul>\n<p class=\"isSelectedEnd\">D\u00edky tomu je procesn\u00ed trubice vhodn\u00e1 pro pokro\u010dil\u00e9 aplikace tepeln\u00e9ho zpracov\u00e1n\u00ed polovodi\u010d\u016f.<\/p>\n<h2>Vynikaj\u00edc\u00ed tepeln\u00e1 vodivost<\/h2>\n<p class=\"isSelectedEnd\">Karbid k\u0159em\u00edku m\u00e1 mnohem vy\u0161\u0161\u00ed tepelnou vodivost ne\u017e k\u0159emen nebo oxid hlinit\u00fd, co\u017e pom\u00e1h\u00e1 dos\u00e1hnout:<\/p>\n<ul data-spread=\"false\">\n<li>Rychlej\u0161\u00ed tepeln\u00e1 odezva<\/li>\n<li>Lep\u0161\u00ed axi\u00e1ln\u00ed a radi\u00e1ln\u00ed rovnom\u011brnost teploty<\/li>\n<li>Stabiln\u00ed podm\u00ednky zpracov\u00e1n\u00ed desti\u010dek<\/li>\n<\/ul>\n<h2>Vynikaj\u00edc\u00ed odolnost proti teplotn\u00edm \u0161ok\u016fm<\/h2>\n<p class=\"isSelectedEnd\">Trubice vydr\u017e\u00ed opakovan\u00e9 rychl\u00e9 cykly zah\u0159\u00edv\u00e1n\u00ed a ochlazov\u00e1n\u00ed, ani\u017e by do\u0161lo k prask\u00e1n\u00ed, deformaci nebo rozpadu povlaku.<\/p>\n<h2>Dlouh\u00e1 \u017eivotnost<\/h2>\n<p class=\"isSelectedEnd\">V porovn\u00e1n\u00ed s k\u0159emenn\u00fdmi trubicemi nab\u00edzej\u00ed SiC trubice:<\/p>\n<ul data-spread=\"false\">\n<li>Del\u0161\u00ed intervaly v\u00fdm\u011bny<\/li>\n<li>Ni\u017e\u0161\u00ed \u010detnost \u00fadr\u017eby<\/li>\n<li>Zkr\u00e1cen\u00ed doby odst\u00e1vky komory<\/li>\n<li>Zlep\u0161en\u00ed celkov\u00fdch n\u00e1klad\u016f na vlastnictv\u00ed (TCO)<\/li>\n<\/ul>\n<div contenteditable=\"false\">\n<hr \/>\n<\/div>\n<h1>Typick\u00e9 aplikace<\/h1>\n<h2><img decoding=\"async\" class=\"size-medium wp-image-2334 alignright\" src=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-300x300.png 300w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-150x150.png 150w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-768x768.png 768w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-12x12.png 12w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-600x600.png 600w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes-100x100.png 100w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Silicon-Carbide-Horizontal-Process-Tube-for-LPCVDCVD-Semiconductor-Processes.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>V\u00fdroba polovodi\u010d\u016f<\/h2>\n<p class=\"isSelectedEnd\">Vhodn\u00e9 pro:<\/p>\n<ul data-spread=\"false\">\n<li>Syst\u00e9my LPCVD<\/li>\n<li>Za\u0159\u00edzen\u00ed pro CVD depozici<\/li>\n<li>Oxida\u010dn\u00ed pece<\/li>\n<li>Difuzn\u00ed pece<\/li>\n<li>Syst\u00e9my \u017e\u00edh\u00e1n\u00ed<\/li>\n<li>Procesy tepeln\u00e9ho zpracov\u00e1n\u00ed desti\u010dek<\/li>\n<\/ul>\n<h2>Fotovoltaick\u00fd pr\u016fmysl<\/h2>\n<p class=\"isSelectedEnd\">Pou\u017e\u00edv\u00e1 se v:<\/p>\n<ul data-spread=\"false\">\n<li>Difuzn\u00ed zpracov\u00e1n\u00ed sol\u00e1rn\u00edch \u010dl\u00e1nk\u016f<\/li>\n<li>Pasivace povrchu<\/li>\n<li>Nan\u00e1\u0161en\u00ed tenk\u00fdch vrstev<\/li>\n<li>Vysokoteplotn\u00ed o\u0161et\u0159en\u00ed pl\u00e1tk\u016f<\/li>\n<\/ul>\n<h2>Pokro\u010dil\u00e9 zpracov\u00e1n\u00ed materi\u00e1l\u016f<\/h2>\n<p class=\"isSelectedEnd\">Plat\u00ed pro:<\/p>\n<ul data-spread=\"false\">\n<li>Procesy karbonizace<\/li>\n<li>O\u0161et\u0159en\u00ed nitridac\u00ed<\/li>\n<li>Tvorba funk\u010dn\u00edch tenk\u00fdch vrstev<\/li>\n<li>Aktivace a modifikace povrchu<\/li>\n<\/ul>\n<div contenteditable=\"false\">\n<hr \/>\n<\/div>\n<h1>Kompatibilita proces\u016f<\/h1>\n<h2>Kompatibiln\u00ed procesn\u00ed atmosf\u00e9ry<\/h2>\n<ul data-spread=\"false\">\n<li>Kysl\u00edk (O\u2082)<\/li>\n<li>Dus\u00edk (N\u2082)<\/li>\n<li>Vysoce \u010dist\u00e9 inertn\u00ed plyny<\/li>\n<li>Regulovan\u00e9 plyny obsahuj\u00edc\u00ed chlor<\/li>\n<li>Oxida\u010dn\u00ed prost\u0159ed\u00ed<\/li>\n<\/ul>\n<h2>Typick\u00e9 procesn\u00ed okno<\/h2>\n<table>\n<tbody>\n<tr>\n<th>Parametr<\/th>\n<th>Specifikace<\/th>\n<\/tr>\n<tr>\n<td>Maxim\u00e1ln\u00ed trval\u00e1 provozn\u00ed teplota<\/td>\n<td>1250\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>Rozsah tlaku<\/td>\n<td>LPCVD Vakuum a\u017e t\u00e9m\u011b\u0159 atmosf\u00e9ra<\/td>\n<\/tr>\n<tr>\n<td>Odolnost proti teplotn\u00edm \u0161ok\u016fm<\/td>\n<td>Vynikaj\u00edc\u00ed<\/td>\n<\/tr>\n<tr>\n<td>T\u011bsnost p\u0159i \u00faniku<\/td>\n<td>\u2264 1\u00d710-\u2079 Pa-m\u00b3\/s<\/td>\n<\/tr>\n<tr>\n<td>Drsnost povrchu<\/td>\n<td>Ra \u2264 0,8-1,6 \u00b5m<\/td>\n<\/tr>\n<tr>\n<td>\u010cistota povlaku<\/td>\n<td>\uff1c 5 ppm<\/td>\n<\/tr>\n<tr>\n<td>Ne\u010distota substr\u00e1tu<\/td>\n<td>\uff1c 300 ppm<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<div contenteditable=\"false\">\n<hr \/>\n<\/div>\n<h1>Technick\u00e9 specifikace<\/h1>\n<table>\n<tbody>\n<tr>\n<td>Polo\u017eka<\/td>\n<td>Specifikace<\/td>\n<\/tr>\n<tr>\n<td>N\u00e1zev produktu<\/td>\n<td>Horizont\u00e1ln\u00ed procesn\u00ed trubice z karbidu k\u0159em\u00edku<\/td>\n<\/tr>\n<tr>\n<td>Materi\u00e1l<\/td>\n<td>Karbid k\u0159em\u00edku vysok\u00e9 \u010distoty<\/td>\n<\/tr>\n<tr>\n<td>N\u00e1t\u011bry<\/td>\n<td>CVD povlak SiC<\/td>\n<\/tr>\n<tr>\n<td>V\u00fdrobn\u00ed proces<\/td>\n<td>Monolitick\u00fd 3D tisk<\/td>\n<\/tr>\n<tr>\n<td>Maxim\u00e1ln\u00ed provozn\u00ed teplota<\/td>\n<td>\u2264 1250\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>Tepeln\u00e1 vodivost<\/td>\n<td>Vysok\u00e1<\/td>\n<\/tr>\n<tr>\n<td>Odolnost proti teplotn\u00edm \u0161ok\u016fm<\/td>\n<td>Vynikaj\u00edc\u00ed<\/td>\n<\/tr>\n<tr>\n<td>Odolnost proti korozi<\/td>\n<td>Vynikaj\u00edc\u00ed<\/td>\n<\/tr>\n<tr>\n<td>Drsnost povrchu<\/td>\n<td>Ra \u2264 0,8-1,6 \u00b5m<\/td>\n<\/tr>\n<tr>\n<td>Ne\u010distoty n\u00e1t\u011bru<\/td>\n<td>\uff1c 5 ppm<\/td>\n<\/tr>\n<tr>\n<td>T\u011bsnost p\u0159i \u00faniku<\/td>\n<td>\u2264 1\u00d710-\u2079 Pa-m\u00b3\/s<\/td>\n<\/tr>\n<tr>\n<td>Typick\u00e9 aplikace<\/td>\n<td>LPCVD \/ CVD \/ Dif\u00faze \/ Oxidace<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<div contenteditable=\"false\">\n<hr \/>\n<\/div>\n<h1>V\u00fdhody oproti tradi\u010dn\u00edm procesn\u00edm trubk\u00e1m<\/h1>\n<table>\n<tbody>\n<tr>\n<td>Majetek<\/td>\n<td>Procesn\u00ed trubice SiC<\/td>\n<td>K\u0159emenn\u00e1 trubice<\/td>\n<td>Hlin\u00edkov\u00e1 trubka<\/td>\n<\/tr>\n<tr>\n<td>Tepeln\u00e1 vodivost<\/td>\n<td>Vysok\u00e1<\/td>\n<td>N\u00edzk\u00e1<\/td>\n<td>N\u00edzk\u00e1<\/td>\n<\/tr>\n<tr>\n<td>Odolnost proti teplotn\u00edm \u0161ok\u016fm<\/td>\n<td>Vynikaj\u00edc\u00ed<\/td>\n<td>Slab\u00e9<\/td>\n<td>M\u00edrn\u00e1<\/td>\n<\/tr>\n<tr>\n<td>Odolnost proti korozi<\/td>\n<td>Vynikaj\u00edc\u00ed<\/td>\n<td>M\u00edrn\u00e1<\/td>\n<td>Dobr\u00fd<\/td>\n<\/tr>\n<tr>\n<td>\u0158\u00edzen\u00ed \u010d\u00e1stic<\/td>\n<td>Vynikaj\u00edc\u00ed<\/td>\n<td>M\u00edrn\u00e1<\/td>\n<td>M\u00edrn\u00e1<\/td>\n<\/tr>\n<tr>\n<td>\u017divotnost<\/td>\n<td>Long<\/td>\n<td>Kr\u00e1tk\u00e9<\/td>\n<td>St\u0159edn\u00ed<\/td>\n<\/tr>\n<tr>\n<td>Stabilita p\u0159i vysok\u00fdch teplot\u00e1ch<\/td>\n<td>Vynikaj\u00edc\u00ed<\/td>\n<td>M\u00edrn\u00e1<\/td>\n<td>Dobr\u00fd<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<div contenteditable=\"false\">\n<hr \/>\n<\/div>\n<h1>Mo\u017enosti p\u0159izp\u016fsoben\u00ed<\/h1>\n<p class=\"isSelectedEnd\">K dispozici jsou z\u00e1kaznick\u00e9 specifikace podle po\u017eadavk\u016f z\u00e1kazn\u00edka na vybaven\u00ed, v\u010detn\u011b:<\/p>\n<ul data-spread=\"false\">\n<li>Pr\u016fm\u011br a d\u00e9lka trubky<\/li>\n<li>Optimalizace tlou\u0161\u0165ky st\u011bny<\/li>\n<li>P\u0159\u00edruby a konstrukce rozhran\u00ed<\/li>\n<li>Funk\u010dn\u00ed plynov\u00e9 porty<\/li>\n<li>Konfigurace vnit\u0159n\u00edho\/vn\u011bj\u0161\u00edho povlaku<\/li>\n<li>Stupn\u011b le\u0161t\u011bn\u00ed povrchu<\/li>\n<li>Normy \u010distoty<\/li>\n<\/ul>\n<div contenteditable=\"false\">\n<hr \/>\n<\/div>\n<h1>\u010cASTO KLADEN\u00c9 DOTAZY<\/h1>\n<h2>Ot\u00e1zka 1: Pro\u010d zvolit karbid k\u0159em\u00edku m\u00edsto k\u0159emenn\u00fdch trubic?<\/h2>\n<p class=\"isSelectedEnd\">Karbid k\u0159em\u00edku poskytuje vy\u0161\u0161\u00ed tepelnou vodivost, ni\u017e\u0161\u00ed zne\u010di\u0161t\u011bn\u00ed, lep\u0161\u00ed odolnost proti teplotn\u00edm \u0161ok\u016fm a v\u00fdrazn\u011b del\u0161\u00ed \u017eivotnost ne\u017e k\u0159emen, zejm\u00e9na p\u0159i vysokoteplotn\u00edch procesech v\u00fdroby polovodi\u010d\u016f.<\/p>\n<h2>Ot\u00e1zka 2: Jak\u00e9 procesy jsou s touto trubic\u00ed kompatibiln\u00ed?<\/h2>\n<p class=\"isSelectedEnd\">Trubice je vhodn\u00e1 pro LPCVD, CVD, dif\u00fazi, oxidaci, \u017e\u00edh\u00e1n\u00ed, pasivaci a dal\u0161\u00ed aplikace tepeln\u00e9ho zpracov\u00e1n\u00ed p\u0159i vysok\u00fdch teplot\u00e1ch.<\/p>\n<h2>Ot\u00e1zka 3: M\u016f\u017ee trubice pracovat v prost\u0159ed\u00ed s obsahem chl\u00f3ru?<\/h2>\n<p>Ano. Povlak CVD SiC nab\u00edz\u00ed vynikaj\u00edc\u00ed odolnost v\u016f\u010di kontrolovan\u00fdm procesn\u00edm prost\u0159ed\u00edm s obsahem chl\u00f3ru.<\/p>","protected":false},"excerpt":{"rendered":"<p class=\"isSelectedEnd\">Horizont\u00e1ln\u00ed procesn\u00ed trubice na karbid k\u0159em\u00edku (SiC) je ur\u010dena pro vysokoteplotn\u00ed LPCVD, CVD, difuzn\u00ed, oxida\u010dn\u00ed a \u017e\u00edhac\u00ed aplikace p\u0159i v\u00fdrob\u011b polovodi\u010d\u016f, fotovoltaick\u00fdch a pokro\u010dil\u00fdch materi\u00e1l\u016f.<\/p>\n<p class=\"isSelectedEnd\">Procesn\u00ed trubice jako hlavn\u00ed sou\u010d\u00e1st reak\u010dn\u00ed komory v horizont\u00e1ln\u00edch syst\u00e9mech tepeln\u00e9ho zpracov\u00e1n\u00ed p\u0159\u00edmo ovliv\u0148uje rovnom\u011brnost teploty, kontrolu kontaminace, stabilitu procesu a celkovou \u017eivotnost za\u0159\u00edzen\u00ed.<\/p>","protected":false},"featured_media":2334,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center 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