![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/High-Flatness-SiC-Ceramic-Vacuum-Chuck-for-Hybrid-Bonding-Applications-2-300x300.png\")
Vakuov\u00e9 skl\u00ed\u010didlo SiC pro lepen\u00ed desti\u010dek je vysoce v\u00fdkonn\u00e1 p\u0159esn\u00e1 keramick\u00e1 adsorp\u010dn\u00ed sou\u010d\u00e1stka ur\u010den\u00e1 pro pokro\u010dil\u00e9 aplikace balen\u00ed polovodi\u010d\u016f a lepen\u00ed desti\u010dek.<\/p>\n
Toto vakuov\u00e9 skl\u00ed\u010didlo, vyroben\u00e9 s pou\u017eit\u00edm vysoce \u010dist\u00e9ho karbidu k\u0159em\u00edku (SiC) CVD nebo pokro\u010dil\u00fdch technologi\u00ed slinut\u00e9ho SiC, poskytuje v\u00fdjime\u010dnou tepelnou stabilitu, mimo\u0159\u00e1dn\u011b vysokou tuhost a submikronovou p\u0159esnost povrchu pro kritick\u00e9 procesy lepen\u00ed.<\/p>\n
D\u00edky p\u0159esn\u00fdm vakuov\u00fdm adsorp\u010dn\u00edm struktur\u00e1m a ultraploch\u00e9mu zpracov\u00e1n\u00ed povrchu skl\u00ed\u010didlo bezpe\u010dn\u011b dr\u017e\u00ed desti\u010dky p\u0159i operac\u00edch wafer-to-wafer (W2W), chip-to-wafer (C2W), hybridn\u00edm lepen\u00ed, balen\u00ed MEMS a pokro\u010dil\u00e9 mont\u00e1\u017ei polovodi\u010d\u016f.<\/p>\n
Jeho n\u00edzk\u00e1 tepeln\u00e1 rozta\u017enost a vynikaj\u00edc\u00ed rozm\u011brov\u00e1 stabilita zaji\u0161\u0165uj\u00ed p\u0159esn\u00e9 um\u00edst\u011bn\u00ed desti\u010dky a z\u00e1rove\u0148 minimalizuj\u00ed tepelnou deformaci p\u0159i procesech za zv\u00fd\u0161en\u00e9 teploty.<\/p>\n
Zrcadlov\u00e1 rovinnost minimalizuje lok\u00e1ln\u00ed nap\u011bt\u00ed a sni\u017euje deformaci desti\u010dky b\u011bhem lepen\u00ed.<\/p>\n
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/High-Flatness-SiC-Ceramic-Vacuum-Chuck-for-Hybrid-Bonding-Applications-1-300x300.png\")
Velmi hladk\u00e9 le\u0161t\u011bn\u00ed zrcadel<\/h3>\nDrsnost povrchu:<\/p>\n
Ra \u2264 0,01 \u03bcm<\/p>\n
V\u00fdhody:<\/p>\n
Karbid k\u0159em\u00edku vykazuje:<\/p>\n
D\u00edky tomu si skl\u00ed\u010didlo udr\u017euje p\u0159esnou polohu i p\u0159i lepen\u00ed za zv\u00fd\u0161en\u00e9 teploty.<\/p>\n
Modul pru\u017enosti:<\/p>\n
>400 GPa<\/p>\n
V\u00fdhody:<\/p>\n
Vysok\u00e1 tuhost je pro submikronov\u00e9 vyrovn\u00e1vac\u00ed procesy kritick\u00e1.<\/p>\n
Vysoce p\u0159esn\u00e9 vakuov\u00e9 obr\u00e1b\u011bn\u00ed dr\u00e1\u017eek:<\/p>\n
P\u0159esnost:<\/p>\n
\u00b15 \u03bcm<\/p>\n
Zaji\u0161\u0165uje:<\/p>\n
| Polo\u017eka<\/th>\n | Specifikace<\/th>\n<\/tr>\n<\/thead>\n |
|---|---|
| Materi\u00e1l<\/td>\n | Karbid k\u0159em\u00edku vysok\u00e9 \u010distoty<\/td>\n<\/tr>\n |
| \u010cistota SiC<\/td>\n | \u226599.999%<\/td>\n<\/tr>\n |
| Rovinnost povrchu<\/td>\n | \u22641 \u03bcm<\/td>\n<\/tr>\n |
| Drsnost povrchu<\/td>\n | Ra \u22640,01 \u03bcm<\/td>\n<\/tr>\n |
| Modul pru\u017enosti<\/td>\n | >400 GPa<\/td>\n<\/tr>\n |
| Tepeln\u00e1 vodivost<\/td>\n | ~120 W\/m-K<\/td>\n<\/tr>\n |
| Hustota<\/td>\n | \u22653,1 g\/cm\u00b3<\/td>\n<\/tr>\n |
| CTE<\/td>\n | ~4.5\u00d710-\u2076\/\u00b0C<\/td>\n<\/tr>\n |
| P\u0159esnost dr\u00e1\u017eek<\/td>\n | \u00b15 \u03bcm<\/td>\n<\/tr>\n |
| Provozn\u00ed teplota<\/td>\n | RT-400 \u00b0C<\/td>\n<\/tr>\n |
| Povrchov\u00e1 \u00faprava<\/td>\n | Zrcadlo le\u0161t\u011bn\u00e9<\/td>\n<\/tr>\n |
| Velikost oplatky<\/td>\n | K dispozici na zak\u00e1zku<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n \n Aplikace<\/h2>\n |
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/20250922113244_25590-300x174.png\")
\u0160irok\u00e9 pou\u017eit\u00ed v:<\/p>\n