\n| Stabilita povrchu<\/td>\n | V pr\u016fb\u011bhu \u010dasu degraduje<\/td>\n | Vysoce stabiln\u00ed<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n
\nBalen\u00ed a manipulace<\/span><\/h1>\n\n- K dispozici jsou obaly pro \u010dist\u00e9 prostory<\/li>\n
- D\u0159ev\u011bn\u00e1 bedna odoln\u00e1 proti n\u00e1razu nebo vakuov\u00e9 uzav\u0159en\u00ed<\/li>\n
- Navr\u017eeno pro p\u0159epravu polovodi\u010d\u016f bez kontaminace<\/li>\n
- Podpora vlastn\u00edch velikost\u00ed (\u03a6380-\u03a6600 mm nebo proveden\u00ed na m\u00edru)<\/li>\n<\/ul>\n
\nPro\u010d si vybrat tento produkt<\/span><\/h1>\nTento nosi\u010d SiC je navr\u017een pro v\u00fdrobu polovodi\u010d\u016f nov\u00e9 generace, kde je rozhoduj\u00edc\u00ed \u010distota, tepeln\u00e1 stabilita a kontrola kontaminace. T\u00edm, \u017ee nahrazuje tradi\u010dn\u00ed nosi\u010de na b\u00e1zi grafitu, v\u00fdrazn\u011b zvy\u0161uje v\u00fdt\u011b\u017enost v\u00fdroby, sni\u017euje n\u00e1klady na \u00fadr\u017ebu a zaji\u0161\u0165uje dlouhodob\u011b stabiln\u00ed v\u00fdkon procesu.<\/p>\n
\n\u010cASTO KLADEN\u00c9 DOTAZY<\/span><\/h1>\nOt\u00e1zka 1: Jak\u00e1 je hlavn\u00ed v\u00fdhoda CVD povlaku SiC ve srovn\u00e1n\u00ed s grafitov\u00fdmi z\u00e1sobn\u00edky?<\/span><\/h3>\nPovlak CVD SiC vytv\u00e1\u0159\u00ed hustou, ultra\u010distou ochrannou vrstvu, kter\u00e1 zabra\u0148uje pronik\u00e1n\u00ed plyn\u016f a vylu\u010dov\u00e1n\u00ed \u010d\u00e1stic grafitu, \u010d\u00edm\u017e v\u00fdrazn\u011b zlep\u0161uje \u017eivotnost a sni\u017euje kontaminaci desti\u010dek.<\/p>\n
\nOt\u00e1zka 2: Lze tento z\u00e1sobn\u00edk SiC pou\u017e\u00edt ve vysokoteplotn\u00edch procesech MOCVD?<\/span><\/h3>\nAno, je speci\u00e1ln\u011b navr\u017een pro aplikace MOCVD a m\u016f\u017ee spolehliv\u011b pracovat p\u0159i teplot\u00e1ch 1100-1200 \u00b0C s vynikaj\u00edc\u00ed tepelnou stabilitou a rovnom\u011brn\u00fdm rozlo\u017een\u00edm tepla.<\/p>\n
\nOt\u00e1zka 3: Jak\u00fd je rozd\u00edl mezi grafitov\u00fdmi z\u00e1sobn\u00edky s povlakem a pln\u00fdmi CVD SiC z\u00e1sobn\u00edky?<\/span><\/h3>\nGrafitov\u00e9 z\u00e1sobn\u00edky s povrchovou \u00fapravou pou\u017e\u00edvaj\u00ed grafitov\u00e9 j\u00e1dro s ochrannou vrstvou SiC, zat\u00edmco z\u00e1sobn\u00edky s plnou CVD SiC jsou monolitick\u00e9 struktury s vy\u0161\u0161\u00ed \u010distotou, lep\u0161\u00ed odolnost\u00ed proti korozi a del\u0161\u00ed \u017eivotnost\u00ed.<\/p>","protected":false},"excerpt":{"rendered":" The SiC ceramic tray plate is a high-performance wafer carrier designed for advanced semiconductor processes such as MOCVD, epitaxy, and ICP etching. It is available in two structures: Graphite substrate with CVD SiC coating Monolithic high-purity CVD SiC tray (\u226599.99%) Compared with conventional graphite carriers, this product offers significantly improved thermal stability, corrosion resistance, and 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|
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-3-300x300.png\")
Keramick\u00e1 deska SiC je vysoce v\u00fdkonn\u00fd nosi\u010d desti\u010dek ur\u010den\u00fd pro pokro\u010dil\u00e9 polovodi\u010dov\u00e9 procesy, jako je MOCVD, epitaxe a lept\u00e1n\u00ed ICP. Je k dispozici ve dvou struktur\u00e1ch:<\/p>\n![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-1-300x300.png\")
![\"\"](\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/Full-CVD-SiC-Wafer-Carrier-Tray-Plate-for-Semiconductor-MOCVD-Etching-Equipment-2-300x300.png\")
<\/p>\n