{"id":2041,"date":"2026-05-08T05:45:52","date_gmt":"2026-05-08T05:45:52","guid":{"rendered":"https:\/\/www.xkh-ceramics.com\/?post_type=product&#038;p=2041"},"modified":"2026-05-08T05:45:52","modified_gmt":"2026-05-08T05:45:52","slug":"sic-ceramic-end-effector-for-precision-wafer-handling-in-semiconductor-equipment","status":"publish","type":"product","link":"https:\/\/www.xkh-ceramics.com\/cs\/product\/sic-ceramic-end-effector-for-precision-wafer-handling-in-semiconductor-equipment\/","title":{"rendered":"SiC Ceramic End Effector for Precision Wafer Handling in Semiconductor Equipment"},"content":{"rendered":"<p data-start=\"258\" data-end=\"597\"><img fetchpriority=\"high\" decoding=\"async\" class=\"size-medium wp-image-2045 alignright\" src=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-300x300.png 300w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-150x150.png 150w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-768x768.png 768w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-12x12.png 12w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-600x600.png 600w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-100x100.png 100w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>The <strong data-start=\"262\" data-end=\"290\">SiC Ceramic End Effector<\/strong> is a high-performance wafer handling component designed for semiconductor automation and precision robotic systems. It is manufactured from ultra-high purity silicon carbide (SiC) ceramic, offering outstanding mechanical strength, thermal stability, and chemical resistance in extreme process environments.<\/p>\n<p data-start=\"599\" data-end=\"945\">Compared with conventional aluminum, stainless steel, or quartz end effectors, the <strong data-start=\"682\" data-end=\"710\">SiC Ceramic End Effector<\/strong> provides significantly lower particle generation, superior dimensional stability, and excellent resistance to thermal deformation. It is widely used in wafer transfer systems where precision, cleanliness, and reliability are critical.<\/p>\n<p data-start=\"947\" data-end=\"1102\">This product is suitable for advanced semiconductor manufacturing environments including vacuum chambers, plasma processes, and high-temperature equipment.<\/p>\n<hr data-start=\"1104\" data-end=\"1107\" \/>\n<h2 data-section-id=\"1cgu054\" data-start=\"1109\" data-end=\"1136\">Technical Specifications<\/h2>\n<div class=\"TyagGW_tableContainer\">\n<div class=\"group TyagGW_tableWrapper flex flex-col-reverse w-fit\" tabindex=\"-1\">\n<table class=\"w-fit min-w-(--thread-content-width)\" data-start=\"1138\" data-end=\"1584\">\n<thead data-start=\"1138\" data-end=\"1165\">\n<tr data-start=\"1138\" data-end=\"1165\">\n<th class=\"\" data-start=\"1138\" data-end=\"1149\" data-col-size=\"sm\">Property<\/th>\n<th class=\"\" data-start=\"1149\" data-end=\"1156\" data-col-size=\"sm\">Unit<\/th>\n<th class=\"\" data-start=\"1156\" data-end=\"1165\" data-col-size=\"sm\">Value<\/th>\n<\/tr>\n<\/thead>\n<tbody data-start=\"1194\" data-end=\"1584\">\n<tr data-start=\"1194\" data-end=\"1233\">\n<td data-start=\"1194\" data-end=\"1214\" data-col-size=\"sm\">Crystal Structure<\/td>\n<td data-start=\"1214\" data-end=\"1218\" data-col-size=\"sm\">&#8211;<\/td>\n<td data-col-size=\"sm\" data-start=\"1218\" data-end=\"1233\">FCC \u03b2 Phase<\/td>\n<\/tr>\n<tr data-start=\"1234\" data-end=\"1260\">\n<td data-start=\"1234\" data-end=\"1244\" data-col-size=\"sm\">Density<\/td>\n<td data-start=\"1244\" data-end=\"1252\" data-col-size=\"sm\">g\/cm\u00b3<\/td>\n<td data-col-size=\"sm\" data-start=\"1252\" data-end=\"1260\">3.21<\/td>\n<\/tr>\n<tr data-start=\"1261\" data-end=\"1295\">\n<td data-start=\"1261\" data-end=\"1279\" data-col-size=\"sm\">Chemical Purity<\/td>\n<td data-start=\"1279\" data-end=\"1283\" data-col-size=\"sm\">%<\/td>\n<td data-start=\"1283\" data-end=\"1295\" data-col-size=\"sm\">99.99995<\/td>\n<\/tr>\n<tr data-start=\"1296\" data-end=\"1320\">\n<td data-start=\"1296\" data-end=\"1307\" data-col-size=\"sm\">Hardness<\/td>\n<td data-col-size=\"sm\" data-start=\"1307\" data-end=\"1312\">HV<\/td>\n<td data-col-size=\"sm\" data-start=\"1312\" data-end=\"1320\">2500<\/td>\n<\/tr>\n<tr data-start=\"1321\" data-end=\"1354\">\n<td data-start=\"1321\" data-end=\"1341\" data-col-size=\"sm\">Flexural Strength<\/td>\n<td data-col-size=\"sm\" data-start=\"1341\" data-end=\"1347\">MPa<\/td>\n<td data-col-size=\"sm\" data-start=\"1347\" data-end=\"1354\">415<\/td>\n<\/tr>\n<tr data-start=\"1355\" data-end=\"1386\">\n<td data-start=\"1355\" data-end=\"1373\" data-col-size=\"sm\">Young\u2019s Modulus<\/td>\n<td data-start=\"1373\" data-end=\"1379\" data-col-size=\"sm\">GPa<\/td>\n<td data-col-size=\"sm\" data-start=\"1379\" data-end=\"1386\">430<\/td>\n<\/tr>\n<tr data-start=\"1387\" data-end=\"1425\">\n<td data-start=\"1387\" data-end=\"1410\" data-col-size=\"sm\">Thermal Conductivity<\/td>\n<td data-start=\"1410\" data-end=\"1418\" data-col-size=\"sm\">W\/m\u00b7K<\/td>\n<td data-col-size=\"sm\" data-start=\"1418\" data-end=\"1425\">300<\/td>\n<\/tr>\n<tr data-start=\"1426\" data-end=\"1474\">\n<td data-start=\"1426\" data-end=\"1458\" data-col-size=\"sm\">Thermal Expansion Coefficient<\/td>\n<td data-start=\"1458\" data-end=\"1467\" data-col-size=\"sm\">10\u207b\u2076\/K<\/td>\n<td data-start=\"1467\" data-end=\"1474\" data-col-size=\"sm\">4.5<\/td>\n<\/tr>\n<tr data-start=\"1475\" data-end=\"1520\">\n<td data-start=\"1475\" data-end=\"1507\" data-col-size=\"sm\">Maximum Operating Temperature<\/td>\n<td data-start=\"1507\" data-end=\"1512\" data-col-size=\"sm\">\u00b0C<\/td>\n<td data-start=\"1512\" data-end=\"1520\" data-col-size=\"sm\">2700<\/td>\n<\/tr>\n<tr data-start=\"1521\" data-end=\"1557\">\n<td data-start=\"1521\" data-end=\"1537\" data-col-size=\"sm\">Heat Capacity<\/td>\n<td data-col-size=\"sm\" data-start=\"1537\" data-end=\"1550\">J\u00b7kg\u207b\u00b9\u00b7K\u207b\u00b9<\/td>\n<td data-col-size=\"sm\" data-start=\"1550\" data-end=\"1557\">640<\/td>\n<\/tr>\n<tr data-start=\"1558\" data-end=\"1584\">\n<td data-start=\"1558\" data-end=\"1571\" data-col-size=\"sm\">Grain Size<\/td>\n<td data-start=\"1571\" data-end=\"1576\" data-col-size=\"sm\">\u03bcm<\/td>\n<td data-start=\"1576\" data-end=\"1584\" data-col-size=\"sm\">2\u201310<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/div>\n<\/div>\n<hr data-start=\"1586\" data-end=\"1589\" \/>\n<h2 data-section-id=\"1ma7m6t\" data-start=\"1591\" data-end=\"1606\"><img decoding=\"async\" class=\"size-medium wp-image-2042 alignright\" src=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-3-300x300.png\" alt=\"\" width=\"300\" height=\"300\" srcset=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-3-300x300.png 300w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-3-150x150.png 150w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-3-768x768.png 768w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-3-12x12.png 12w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-3-600x600.png 600w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-3-100x100.png 100w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-3.png 1000w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/>Key Features<\/h2>\n<p data-start=\"1608\" data-end=\"1706\"><strong data-start=\"1608\" data-end=\"1638\">Ultra High Purity Material<\/strong><br data-start=\"1638\" data-end=\"1641\" \/>Ensures minimal particle contamination in cleanroom environments.<\/p>\n<p data-start=\"1708\" data-end=\"1836\"><strong data-start=\"1708\" data-end=\"1739\">Excellent Thermal Stability<\/strong><br data-start=\"1739\" data-end=\"1742\" \/>Maintains structural integrity under repeated thermal cycling and high-temperature processing.<\/p>\n<p data-start=\"1838\" data-end=\"1934\"><strong data-start=\"1838\" data-end=\"1863\">Low Thermal Expansion<\/strong><br data-start=\"1863\" data-end=\"1866\" \/>Provides high dimensional accuracy during wafer transfer operations.<\/p>\n<p data-start=\"1936\" data-end=\"2051\"><strong data-start=\"1936\" data-end=\"1964\">High Mechanical Strength<\/strong><br data-start=\"1964\" data-end=\"1967\" \/>Resistant to fracture, wear, and long-term fatigue in continuous production systems.<\/p>\n<p data-start=\"2053\" data-end=\"2138\"><strong data-start=\"2053\" data-end=\"2076\">Chemical Resistance<\/strong><br data-start=\"2076\" data-end=\"2079\" \/>Stable in plasma, corrosive gases, and vacuum environments.<\/p>\n<p data-start=\"2140\" data-end=\"2228\"><strong data-start=\"2140\" data-end=\"2171\">Ultra Smooth Surface Finish<\/strong><br data-start=\"2171\" data-end=\"2174\" \/>Reduces wafer scratching and improves handling safety.<\/p>\n<p data-start=\"2230\" data-end=\"2319\"><strong data-start=\"2230\" data-end=\"2251\">Long Service Life<\/strong><br data-start=\"2251\" data-end=\"2254\" \/>Designed for high-throughput semiconductor manufacturing systems.<\/p>\n<hr data-start=\"2321\" data-end=\"2324\" \/>\n<h2 data-section-id=\"2gad1q\" data-start=\"2326\" data-end=\"2350\">Manufacturing Process<\/h2>\n<p data-start=\"2352\" data-end=\"2443\">The <strong data-start=\"2356\" data-end=\"2384\">SiC Ceramic End Effector<\/strong> is produced using advanced ceramic engineering techniques.<\/p>\n<p data-start=\"2445\" data-end=\"2547\">High-purity silicon carbide powder is selected and strictly controlled to ensure material consistency.<\/p>\n<p data-start=\"2549\" data-end=\"2663\">Precision forming is carried out using cold isostatic pressing or injection molding to achieve complex geometries.<\/p>\n<p data-start=\"2665\" data-end=\"2757\">High-temperature sintering above 2000\u00b0C ensures full densification and structural stability.<\/p>\n<p data-start=\"2759\" data-end=\"2851\">CNC diamond machining is applied to achieve micron-level precision and wafer-grade flatness.<\/p>\n<p data-start=\"2853\" data-end=\"2937\">Final polishing and inspection ensure compliance with semiconductor-grade standards.<\/p>\n<p data-start=\"2939\" data-end=\"3065\">Each product undergoes strict dimensional inspection, surface quality testing, and non-destructive evaluation before delivery.<\/p>\n<hr data-start=\"3067\" data-end=\"3070\" \/>\n<h2 data-section-id=\"mu966k\" data-start=\"3072\" data-end=\"3087\">Applications<\/h2>\n<p data-start=\"3089\" data-end=\"3192\">The <strong data-start=\"3093\" data-end=\"3121\">SiC Ceramic End Effector<\/strong> is widely used in semiconductor and high-precision automation systems.<\/p>\n<p data-start=\"3194\" data-end=\"3255\">Wafer transfer systems for 6-inch, 8-inch, and 12-inch wafers<\/p>\n<p data-start=\"3257\" data-end=\"3306\">Robotic wafer handling systems in vacuum chambers<\/p>\n<p data-start=\"3308\" data-end=\"3351\">CVD, ALD, etching, and deposition equipment<\/p>\n<p data-start=\"3353\" data-end=\"3400\">FOUP and FOSB automated load and unload systems<\/p>\n<p data-start=\"3402\" data-end=\"3445\">Cleanroom wafer automation production lines<\/p>\n<p data-start=\"3447\" data-end=\"3493\">Laser processing and thermal annealing systems<\/p>\n<p data-start=\"3447\" data-end=\"3493\"><img decoding=\"async\" class=\"wp-image-2046 size-full aligncenter\" src=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment.jpg\" alt=\"\" width=\"680\" height=\"204\" srcset=\"https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment.jpg 680w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-300x90.jpg 300w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-18x5.jpg 18w, https:\/\/www.xkh-ceramics.com\/wp-content\/uploads\/2026\/05\/SiC-Ceramic-End-Effector-for-Precision-Wafer-Handling-in-Semiconductor-Equipment-600x180.jpg 600w\" sizes=\"(max-width: 680px) 100vw, 680px\" \/><\/p>\n<hr data-start=\"3495\" data-end=\"3498\" \/>\n<h2 data-section-id=\"14xaw73\" data-start=\"3500\" data-end=\"3549\">Advantages Compared with Traditional Materials<\/h2>\n<p data-start=\"3551\" data-end=\"3676\">Compared with aluminum end effectors, SiC ceramic provides better thermal stability and eliminates metal contamination risks.<\/p>\n<p data-start=\"3678\" data-end=\"3767\">Compared with quartz, it offers higher mechanical strength and lower particle generation.<\/p>\n<p data-start=\"3769\" data-end=\"3870\">Compared with stainless steel, it performs more reliably in plasma and high-temperature environments.<\/p>\n<hr data-start=\"3872\" data-end=\"3875\" \/>\n<h2 data-section-id=\"1hryhf7\" data-start=\"3877\" data-end=\"3883\">FAQ<\/h2>\n<p data-start=\"3885\" data-end=\"4113\"><strong data-start=\"3885\" data-end=\"3952\">Why choose SiC Ceramic End Effector instead of metal or quartz?<\/strong><br data-start=\"3952\" data-end=\"3955\" \/>SiC ceramic provides superior thermal stability, chemical resistance, and ultra-low particle generation, making it ideal for advanced semiconductor processes.<\/p>\n<p data-start=\"4115\" data-end=\"4259\"><strong data-start=\"4115\" data-end=\"4140\">Can it be customized?<\/strong><br data-start=\"4140\" data-end=\"4143\" \/>Yes, we support full customization including geometry, arm length, mounting interface, and wafer size compatibility.<\/p>\n<p data-start=\"4261\" data-end=\"4417\"><strong data-start=\"4261\" data-end=\"4310\">Is it suitable for vacuum and plasma systems?<\/strong><br data-start=\"4310\" data-end=\"4313\" \/>Yes, SiC ceramic is chemically inert and performs reliably in ultra-high vacuum and plasma environments.<\/p>\n<p data-start=\"4419\" data-end=\"4588\"><strong data-start=\"4419\" data-end=\"4448\">What is the service life?<\/strong><br data-start=\"4448\" data-end=\"4451\" \/>It offers significantly longer service life compared with conventional metal or quartz end effectors under standard operating conditions.<\/p>\n<p data-start=\"4590\" data-end=\"4741\"><strong data-start=\"4590\" data-end=\"4628\">Do you provide inspection reports?<\/strong><br data-start=\"4628\" data-end=\"4631\" \/>Yes, we provide dimensional reports, material certificates, and quality inspection documentation upon request.<\/p>","protected":false},"excerpt":{"rendered":"<p>The <strong data-start=\"262\" data-end=\"290\">SiC Ceramic End Effector<\/strong> is a high-performance wafer handling component designed for semiconductor automation and precision robotic systems. It is manufactured from ultra-high purity silicon carbide (SiC) ceramic, offering outstanding mechanical strength, thermal stability, and chemical resistance in extreme process environments.<\/p>","protected":false},"featured_media":2045,"comment_status":"open","ping_status":"closed","template":"","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","ast-disable-related-posts":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"default","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center 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